公开(公告)号：US20100112742A1

公开(公告)日：2010-05-06

申请号：US12655438

申请日：2009-12-30

申请人： Kyu Han Lee ,  Je Won Kim ,  Dong Joon Kim

发明人： Kyu Han Lee ,  Je Won Kim ,  Dong Joon Kim

IPC分类号： H01L21/20

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2004 ,  H01S5/3095 ,  H01S5/3412 ,  H01S5/34333

摘要： A method of forming a nitride semiconductor device is disclosed. An n-type GaN layer is formed on a substrate. A self assembled nitride semiconductor quantum dot layer is formed on the n-type GaN layer by growing InyGa(1-y)N (0.3≦y≦1) directly on the n-type GaN layer. A resonance tunnel layer is formed on the n-type GaN layer to cover the nitride semiconductor quantum dot layer. An active layer is formed on the resonance tunnel layer. A p-type nitride semiconductor layer is formed on the active layer. The active layer contains a quantum well layer and a quantum barrier layer, and the resonance tunnel layer has a band gap energy greater than that of the quantum well layer.

摘要翻译： 公开了一种形成氮化物半导体器件的方法。 在基板上形成n型GaN层。 通过在n型GaN层上直接生长In y Ga（1-y）N（0.3＆lt; nlE; y＆nlE; 1），在n型GaN层上形成自组装氮化物半导体量子点层。 谐振隧道层形成在n型GaN层上以覆盖氮化物半导体量子点层。 在谐振隧道层上形成有源层。 在有源层上形成p型氮化物半导体层。 有源层包含量子阱层和量子阻挡层，并且谐振隧道层的带隙能量大于量子阱层的带隙能量。

公开(公告)号：US20100019258A1

公开(公告)日：2010-01-28

申请号：US12338438

申请日：2008-12-18

申请人： Sang Won KANG ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won KANG ,  Seong Ju Park ,  Joo Young Cho ,  Il Kyu Park ,  Yong Chun Kim ,  Dong Joon Kim ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/641

摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

摘要翻译： 提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。 一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

公开(公告)号：US20140191194A1

公开(公告)日：2014-07-10

申请号：US14237513

申请日：2011-08-09

申请人： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

发明人： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

IPC分类号： H01L33/24 ,  H01L33/06

CPC分类号： H01L33/20 ,  H01L33/14

摘要： There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

摘要翻译： 提供一种氮化物半导体发光器件，其能够通过纹理效果提高光提取效率，并且包括：发光结构，形成在基板上，并且包括第一导电型氮化物半导体层和第二导电型氮化物半导体层 其间插入有源层; 电连接到第一导电型氮化物半导体层的第一电极; 电连接到第二导电型氮化物半导体层的第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括通过垂直穿透所述发光结构而形成的多个通孔的光提取图案。

公开(公告)号：US08643037B2

公开(公告)日：2014-02-04

申请号：US13441562

申请日：2012-04-06

申请人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

发明人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/04 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

公开(公告)号：US20070228388A1

公开(公告)日：2007-10-04

申请号：US11651023

申请日：2007-01-09

申请人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

发明人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

公开(公告)号：US09166098B2

公开(公告)日：2015-10-20

申请号：US12338496

申请日：2008-12-18

申请人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

发明人： Sang Won Kang ,  Seong Ju Park ,  Min Ki Kwon ,  Sang Jun Lee ,  Joo Young Cho ,  Yong Chun Kim ,  Sang Heon Han ,  Dong Ju Lee ,  Jeong Tak Oh ,  Je Won Kim

IPC分类号： H01L33/00 ,  H01S5/30 ,  H01S5/00 ,  H01S5/32 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/025 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.

摘要翻译： 提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和 多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

公开(公告)号：US20140191192A1

公开(公告)日：2014-07-10

申请号：US14235705

申请日：2011-07-29

申请人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

发明人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

摘要翻译： 提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。 半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

公开(公告)号：US07674643B2

公开(公告)日：2010-03-09

申请号：US11443376

申请日：2006-05-31

申请人： Jae Hoon Lee ,  Jung Hee Lee ,  Je Won Kim

发明人： Jae Hoon Lee ,  Jung Hee Lee ,  Je Won Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/12

摘要： A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.

摘要翻译： 氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成的具有量子阱结构的有源层，以及 形成在有源层上的p型GaN覆层。

公开(公告)号：US08637897B2

公开(公告)日：2014-01-28

申请号：US13035063

申请日：2011-02-25

申请人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

发明人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

摘要翻译： 半导体发光器件包括衬底和布置在衬底上的多个发光单元。 每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层发射蓝色光。 互连结构将一个发光单元的第一导电型和第二导电型半导体层电连接到另一发光单元的第一导电型和第二导电型半导体层。 在由发光单元限定的发光区域中形成光转换部分，并且包括分别具有红色和/或绿色光转换材料的红色和/或绿色光转换部分。

公开(公告)号：US08598619B2

公开(公告)日：2013-12-03

申请号：US13034136

申请日：2011-02-24

申请人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

发明人： Je Won Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Jong Ho Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

摘要翻译： 半导体发光器件包括衬底和布置在衬底上的多个发光单元。 每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层发射蓝色光。 互连结构将一个发光单元的第一导电型和第二导电型半导体层电连接到另一发光单元的第一导电型和第二导电型半导体层。 在由发光单元限定的发光区域中形成光转换部分，并且包括分别具有红色和/或绿色光转换材料的红色和/或绿色光转换部分。