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    METHOD TO CREATE AIR GAPS
    24.
    发明申请
    METHOD TO CREATE AIR GAPS 有权

    公开(公告)号：US20240429091A1

    公开(公告)日：2024-12-26

    申请号：US18824454

    申请日：2024-09-04

    Applicant: Lam Research Corporation

    Inventor： Patrick A. Van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

    IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

    Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an H2-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% H2. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

    METHOD TO CREATE AIR GAPS
    26.
    发明申请
    METHOD TO CREATE AIR GAPS 审中-公开

    公开(公告)号：US20200219758A1

    公开(公告)日：2020-07-09

    申请号：US16825473

    申请日：2020-03-20

    Applicant: Lam Research Corporation

    Inventor： Patrick van Cleemput ,  Seshasayee Varadarajan ,  Bart J. van Schravendijk

    IPC: H01L21/768 ,  H01L29/417 ,  H01L29/66 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L29/78

    Abstract: Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as SiO2 and SiN can be selectively etched using a plasma formed in an Hz-containing process gas. The etching creates a recessed feature in place of the tin oxide between the surrounding materials. A third material, such as SiO2 is deposited over the resulting recessed feature without fully filling the recessed feature, forming an air gap. A method for selectively etching tin oxide in a presence of SiO2, SiC, SiN, SiOC, SiNO, SiCNO, or SiCN, includes, in some embodiments, contacting the substrate with a plasma formed in a process gas comprising at least about 50% Hz. Etching of tin oxide can be performed without using an external bias at the substrate and is preferably performed at a temperature of less than about 100° C.

    LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY
    29.
    发明申请
    LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY 审中-公开
    具有改进流量均匀性的底座的低体积淋浴

    公开(公告)号：US20160340782A1

    公开(公告)日：2016-11-24

    申请号：US14850816

    申请日：2015-09-10

    Applicant: Lam Research Corporation

    Inventor： Ramesh Chandrasekharan ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Hu Kang ,  Adrien LaVoie ,  Edward Augustyniak ,  Yukinori Sakiyama ,  Chloe Baldasseroni ,  Seshasayee Varadarajan ,  Basha Sajjad ,  Jennifer L. Petraglia

    IPC: C23C16/455 ,  C23C16/52 ,  C23C16/50

    CPC classification number: C23C16/45565 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3244

    Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

    Abstract translation: 半导体处理装置中的喷头可以包括构造成改善原子层沉积期间的流动均匀性的面板通孔。 喷头可以包括具有用于将气体分散到基板上的多个通孔的面板，其中面板包括小直径的通孔。 例如，每个通孔的直径可以小于约0.04英寸。 另外或在替代方案中，喷头可以包括沿着圆周定位的直径大于被处理的基板的直径的直径的边缘通孔。 淋浴头可以是低容量的喷头，并且可以包括邻近一个或多个气体入口的挡板，其与喷淋头的增压室容积连通。 具有小直径通孔和/或边缘通孔的面板可以改善整体膜不均匀性，改善基板边缘处的方位角膜不均匀性，并且能够在较高RF功率下操作。

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