公开(公告)号：US20210287943A1

公开(公告)日：2021-09-16

申请号：US16814750

申请日：2020-03-10

Applicant: Micron Technology, Inc.

Inventor： Corey Staller ,  Anilkumar Chandolu

IPC: H01L21/8234 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method used in forming integrated circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. A stair-step structure is formed into the stack. A first liquid is applied onto the stair-step structure. The first liquid comprises insulative physical objects that individually have at least one of a maximum submicron dimension or a minimum submicron dimension. The first liquid is removed to leave the insulative physical objects touching one another and to have void-spaces among the touching insulative physical objects. A second liquid that is different from the first liquid is applied into the void-spaces. The second liquid is changed into a solid insulative material in the void-spaces. Other embodiments, including structure, are disclosed.

公开(公告)号：US20210272845A1

公开(公告)日：2021-09-02

申请号：US17320863

申请日：2021-05-14

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Christopher R. Ritchie ,  Darwin A. Clampitt ,  S M Istiaque Hossain

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/11556

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising vertically alternating insulating structures and additional insulating structures arranged in tiers. Each of the tiers individually comprises one of the insulating structures and one of the additional insulating structures. A first trench is formed to partially vertically extend through the stack structure. The first trench comprises a first portion having a first width, and a second portion at a horizontal boundary of the first portion and having a second width greater than the first width. A dielectric structure is formed within the first trench. The dielectric structure comprises a substantially void-free section proximate the horizontal boundary of the first portion of the trench. Microelectronic devices and electronic systems are also described.

公开(公告)号：US20210257385A1

公开(公告)日：2021-08-19

申请号：US17215308

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Yi Hu ,  Merri L. Carlson ,  Anilkumar Chandolu ,  Indra V. Chary ,  David Daycock ,  Harsh Narendrakumar Jain ,  Matthew J. King ,  Jian Li ,  Brett D. Lowe ,  Prakash Rau Mokhna Rau ,  Lifang Xu

IPC: H01L27/11582 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11526 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11573 ,  H01L21/3213 ,  H01L27/11556

Abstract: A method used in forming a memory array comprising strings of memory cells and operative through-array-vias (TAVs) comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. The stack comprises a TAV region and an operative memory-cell-string region. The TAV region comprises spaced operative TAV areas. Operative channel-material strings are formed in the stack in the operative memory-cell-string region and dummy channel-material strings are formed in the stack in the TAV region laterally outside of and not within the operative TAV areas. Operative TAVs are formed in individual of the spaced operative TAV areas in the TAV region. Other methods and structure independent of method are disclosed.

公开(公告)号：US20210151400A1

公开(公告)日：2021-05-20

申请号：US17141134

申请日：2021-01-04

Applicant: Micron Technology, Inc.

Inventor： Giorgio Mariottini ,  Sameer Vadhavkar ,  Wayne Huang ,  Anilkumar Chandolu ,  Mark Bossler

IPC: H01L23/00 ,  H01L21/48

Abstract: The present technology is directed to manufacturing collars for under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects and associated systems. A semiconductor die includes a semiconductor material having solid-state components and an interconnect extending at least partially through the semiconductor material. An under-bump metal (UBM) structure is formed over the semiconductor material and is electrically coupled to corresponding interconnects. A collar surrounds at least a portion of the side surface of the UBM structure, and a solder material is disposed over the top surface of the UBM structure.

公开(公告)号：US10971409B2

公开(公告)日：2021-04-06

申请号：US16233728

申请日：2018-12-27

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Lisa R. Copenspire-Ross ,  Michael D. Kenney

IPC: H01L23/58 ,  H01L21/66 ,  G01N21/95 ,  H01L23/00

Abstract: Semiconductor devices having measurement features and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a plurality of stacked semiconductor dies each having measurement features formed along an outer periphery of a surface thereof. One or more image capture devices can image the semiconductor device and a controller can detect the measurement features in imaging data received from the image capture devices. The controller can further determine the distance between two or more of the measurement features to estimate a bond line thickness between semiconductor dies in the stack.

公开(公告)号：US10916527B2

公开(公告)日：2021-02-09

申请号：US16934924

申请日：2020-07-21

Applicant: Micron Technology, Inc.

Inventor： Sameer S. Vadhavkar ,  Xiao Li ,  Anilkumar Chandolu

IPC: H01L25/065 ,  H01L23/367

Abstract: Apparatuses and methods for semiconductor die heat dissipation are described. For example, an apparatus for semiconductor die heat dissipation may include a substrate and a heat spreader. The substrate may include a thermal interface layer disposed on a surface of the substrate, such as disposed between the substrate and the heat spreader. The heat spreader may include a plurality of substrate-facing protrusions in contact with the thermal interface layer, wherein the plurality of substrate-facing protrusions are disposed at least partially through the thermal interface layer.

公开(公告)号：US20200161187A1

公开(公告)日：2020-05-21

申请号：US16749443

申请日：2020-01-22

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Matthew J. King ,  Indra V. Chary ,  Darwin A. Clampitt

IPC: H01L21/8234 ,  H01L27/11556

Abstract: A method of forming a semiconductor device comprises forming sacrificial structures and support pillars. The sacrificial structures comprise an isolated sacrificial structure in a slit region and connected sacrificial structures in a pillar region. Tiers are formed over the sacrificial structures and support pillars, and a portion of the tiers are removed to form tier pillars and tier openings, exposing the connected sacrificial structures and support pillars. The connected sacrificial structures are removed to form a cavity, a portion of the cavity extending below the isolated sacrificial structure. A cell film is formed over the tier pillars and over sidewalls of the cavity. A fill material is formed in the tier openings and over the cell film. A portion of the tiers in the slit region is removed, exposing the isolated sacrificial structure, which is removed to form a source opening. The source opening is connected to the cavity and a conductive material is formed in the source opening and in the cavity. Semiconductor devices and systems are also disclosed.

公开(公告)号：US20190252338A1

公开(公告)日：2019-08-15

申请号：US16387771

申请日：2019-04-18

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu ,  Kenneth N. Hagen

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/065 ,  H01L25/00

Abstract: A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

公开(公告)号：US20190157246A1

公开(公告)日：2019-05-23

申请号：US16257438

申请日：2019-01-25

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu

IPC: H01L25/065 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L21/768 ,  H01L25/18 ,  H01L23/48

Abstract: Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

公开(公告)号：US20180026015A1

公开(公告)日：2018-01-25

申请号：US15724102

申请日：2017-10-03

Applicant: Micron Technology, Inc.

Inventor： Anilkumar Chandolu

IPC: H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/367

CPC classification number: H01L25/0657 ,  H01L21/56 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/81 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13024 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13565 ,  H01L2224/13647 ,  H01L2224/1411 ,  H01L2224/14181 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/17107 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83487 ,  H01L2224/8385 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/05032 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/01047

Abstract: Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.