公开(公告)号：US10607845B1

公开(公告)日：2020-03-31

申请号：US16015772

申请日：2018-06-22

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC: B81C1/00 ,  C23C14/48 ,  C23C16/04 ,  C23C16/48 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/22 ,  H01J37/30 ,  H01L21/02 ,  H01L21/26 ,  H01L21/66 ,  H01J37/244 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/308 ,  H01L21/3065

Abstract: Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US10523433B1

公开(公告)日：2019-12-31

申请号：US15711891

申请日：2017-09-21

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: G06F21/00 ,  H04L9/08 ,  H04L9/30

Abstract: Methods, systems and devices for using different encryption keys written into interconnects of different functional blocks in different integrated circuits to securely encrypt and authenticate firmware, data, instructions and other messages transmitted among said functional blocks; and methods, systems and devices to obfuscate encryption keys to significantly increase the time and resources required to compromise those keys, ensuring encrypted data is only decrypted by authorized functional blocks, applications or users. Unique keys, small enough not to impact substrate surface area available for other device functions, can be written by charged particle beams such that multiple (or each of) functional blocks has a corresponding key unique within an IC and across a line of ICs and so that access to said keys is as limited (or nonexistent) as desired. Circuits embodying key bits can also be distributed throughout ICs and across layers, uniquely to individual functional blocks in individual ICs, to obfuscate patterns implementing keys and thereby raising time and resource cost to reverse engineer keys to prohibitive levels.

公开(公告)号：US09881817B1

公开(公告)日：2018-01-30

申请号：US15171922

申请日：2016-06-02

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Michael C. Smayling ,  Theodore A. Prescop

IPC: G01R31/26 ,  H01L21/67 ,  H01L21/265 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66 ,  H01J37/317 ,  H01J37/305 ,  H01J37/26

CPC classification number: H01L21/67069 ,  H01J37/26 ,  H01J37/305 ,  H01J37/3171 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26513 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67288 ,  H01L22/12

Abstract: Methods, tools and systems for patterning of substrates using charged particle beams without photomasks, without a resist layer, using multiple different processes (different chemistry processes and/or different ones of material deposition, removal and/or modification) in the same vacuum space, wherein said processes are performed independently (without cross-interference) and simultaneously. As a result, the number of process steps can be reduced and some lithography steps can be eliminated, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Also, because such processes are resist-less, layer-to-layer registration and other column control processes can be performed by imaging previous-layer features local to (or in contact with) features to be written in a next layer as designated by the design layout database.

公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US09556521B1

公开(公告)日：2017-01-31

申请号：US14809985

申请日：2015-07-27

Applicant: Multibeam Corporation

Inventor： Theodore A. Prescop ,  Kevin M. Monahan ,  David K. Lam ,  Michael C. Smayling

IPC: C23C16/48 ,  H01J37/06 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

Abstract translation: 用于使用没有光掩模并且没有抗蚀剂层的带电粒子束来图案化衬底的方法，装置和系统。 材料可以沉积到衬底上，如设计布局数据库所指示的那样，被定位到由多个匹配的带电粒子束柱靶向的位置上。 减少工艺步骤的数量和消除光刻步骤在局部化材料添加中具有减少制造周期时间并通过降低缺陷引入概率来提高产量的双重优点。 此外，高度局部化的精密材料沉积允许沉积速率的受控变化并且能够创建3D结构。 局部气体注入器和检测器以及本地光子注入器和检测器对于相应的列是局部的，并且可以用于促进快速，准确，有针对性的高度可配置的衬底处理，有利地使用所述束柱的大阵列。