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    High resolution etalon-grating monochromator
    21.
    发明授权
    High resolution etalon-grating monochromator 有权
    高分辨率标准光栅单色仪

    公开(公告)号：US06480275B2

    公开(公告)日：2002-11-12

    申请号：US09772293

    申请日：2001-01-29

    申请人： Richard L. Sandstrom ,  Alexander I. Ershov ,  William N. Partlo ,  Igor V. Fomenkov ,  Scott T. Smith

    发明人： Richard L. Sandstrom ,  Alexander I. Ershov ,  William N. Partlo ,  Igor V. Fomenkov ,  Scott T. Smith

    IPC分类号： G01J318

    CPC分类号： G01J3/12 ,  G01J1/4257 ,  G01J3/22 ,  G01J3/26 ,  G01J9/02

    摘要： A high resolution etalon-grating monochromator. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the monochromator and scanning the laser wavelength over a range which includes the monochromator slit wavelength.

    摘要翻译： 高分辨率标准光栅单色仪。 优选的实施例在紫外范围内呈现非常狭窄的狭缝功能，并且对于测量用于集成电路光刻的窄带准分子激光器的带宽是非常有用的。 来自激光的光被聚焦成漫射器，并且离开扩散器的漫射光照射标准具。 将其从标准具出射的光的一部分收集并引导到位于标准具的边缘图案处的狭缝中。 通过狭缝的光线被准直，并且准直光照射位于大约Littrow配置中的光栅，其根据波长散发光。 表示对应于所选择的标准具条纹的波长的调度光​​的一部分通过第二狭缝并由光检测器监视。 当标准具和光栅调谐到相同的精确波长时，定义狭缝功能，其极窄，例如约0.034μm（FWHM）和约0.091μm（95％积分）。 激光束的带宽可以通过激光束的引导部分进入单色仪并且在包括单色器狭缝波长的范围内扫描激光波长而被非常精确地测量。

    Laser produced plasma EUV light source
    23.
    发明授权
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号：US08158960B2

    公开(公告)日：2012-04-17

    申请号：US12721317

    申请日：2010-03-10

    申请人： Georgiy O. Vaschenko ,  Alexander I. Ershov ,  Richard L. Sandstrom

    发明人： Georgiy O. Vaschenko ,  Alexander I. Ershov ,  Richard L. Sandstrom

    IPC分类号： H01J49/00

    CPC分类号： B82Y10/00 ,  G03F7/70033 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

    摘要： A device is disclosed herein which may include a plasma generating system comprising a source of target material droplets and a laser producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation, wherein the droplet source comprises a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing the spacing between at least some adjacent droplets to decrease as the droplets travel to the irradiation region.

    摘要翻译： 本文公开了一种装置，其可以包括等离子体产生系统，其包括目标材料液滴源和产生在照射区域照射液滴的光束的激光器，等离子体产生EUV辐射，其中液滴源包括离开孔口的流体， 产生流体中的扰动的子系统产生具有不同初始速度的液滴，导致至少一些相邻液滴之间的间隔随着液滴行进到照射区域而减小。

    EUV collector debris management
    24.
    发明授权
    EUV collector debris management 失效
    EUV收集器碎片管理

    公开(公告)号：US08075732B2

    公开(公告)日：2011-12-13

    申请号：US10979945

    申请日：2004-11-01

    申请人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    发明人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    IPC分类号： C23F1/00

    CPC分类号： B08B7/00

    摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    摘要翻译： 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。