公开(公告)号：US20200058488A1

公开(公告)日：2020-02-20

申请号：US16440740

申请日：2019-06-13

Applicant: SAMSUNG DISPLAY CO., LTD ,  YONSEI UNIVERSITY, UNIVERSITY - INDUSTRY FOUNDATION (UIF)

Inventor： Jun Hyung Lim ,  Hyung Jun Kim ,  Sun Hee Lee ,  Seung Gi Seo ,  Whang Je Woo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/49

Abstract: A method for manufacturing a semiconductor device according to an, exemplary embodiment of the present disclosure includes: forming a semiconductor layer on a substrate in a chamber; and forming a semiconductor layer on a substrate in a chamber. Forming the insulation layer includes: (a) injecting precursors that include a metal into a surface of the semiconductor layer; (b) removing precursors that are not adsorbed; (c) injecting reactants onto the surface of the semiconductor layer; and (d) removing residual reactants. The semiconductor layer includes a semiconductor material that has a layered structure.

公开(公告)号：US09412771B2

公开(公告)日：2016-08-09

申请号：US14793966

申请日：2015-07-08

Applicant: Samsung Display Co., Ltd

Inventor： Soyoung Koo ,  Myounghwa Kim ,  Sangho Park ,  Jun Hyung Lim ,  Masataka Kano

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L29/24

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78693 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.

Abstract translation: 公开了一种薄膜晶体管的制造方法及其制造方法。 一方面，制造薄膜晶体管的方法包括在衬底上形成氧化物半导体层，用由氮气或一氧化氮气体产生的等离子体等离子体处理氧化物半导体层，以减少氧化物中的缺陷 并且等离子体处理的氧化物半导体层退火以形成沟道层。

公开(公告)号：US08969872B2

公开(公告)日：2015-03-03

申请号：US13789335

申请日：2013-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Byung Du Ahn ,  Ji Hun Lim ,  Jun Hyung Lim ,  Dae Hwan Kim ,  Jae Hyeong Kim ,  Je Hun Lee ,  Hyun Kwang Jung

IPC: H01L29/04 ,  H01L29/786 ,  H01L21/28

CPC classification number: H01L29/78606 ,  H01L21/28 ,  H01L27/124 ,  H01L29/786 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion.

Abstract translation: 薄膜晶体管显示面板a包括透明基板; 位于所述基板上的栅电极; 位于所述栅电极上的栅极绝缘层; 位于所述栅绝缘层上并包括沟道区的半导体层; 位于半导体层上且彼此面对的源电极和漏电极; 以及钝化层，被配置为覆盖所述源电极，所述漏电极和所述半导体层，其中所述半导体层包括在所述源电极和所述栅电极之间的相对较厚的第一部分，以及在所述漏电极和所述半导体层之间的相对较薄的第二部分 栅电极重叠，相对较厚的第一部分足够厚，以便如果第一部分与第二部分一样薄，则基本上可以减少否则可能在栅极电极到栅介质界面处发生的电荷捕获现象。

公开(公告)号：US12125836B2

公开(公告)日：2024-10-22

申请号：US18395966

申请日：2023-12-26

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Jin Jeon ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Yun Yong Nam ,  Jun Hyung Lim

IPC: H01L25/16 ,  H01L27/12 ,  H10K59/122 ,  H10K59/123

CPC classification number: H01L25/167 ,  H01L27/124 ,  H01L27/1259 ,  H10K59/122 ,  H10K59/123

Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

公开(公告)号：US12107114B2

公开(公告)日：2024-10-01

申请号：US17471679

申请日：2021-09-10

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun Kim ,  So Young Koo ,  Eok Su Kim ,  Yun Yong Nam ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/60

CPC classification number: H01L27/156 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/60

Abstract: A display device includes first banks on a substrate and spaced apart from each other, a first electrode and a second electrode on the first banks and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, and light emitting elements on the first insulating layer and each having ends on the first electrode and the second electrode. Each of the first banks includes a first pattern portion including concave portions and convex portions. The first pattern portions of the first banks are disposed on side surfaces of the first banks. The side surfaces are spaced apart and face each other. Each of the first electrode and the second electrode includes a second pattern portion on the first pattern portion and having a pattern shape corresponding to the first pattern portion on a surface thereof.

公开(公告)号：US12075665B2

公开(公告)日：2024-08-27

申请号：US17343817

申请日：2021-06-10

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Won Lee ,  Eun Hye Ko ,  Yeon Hong Kim ,  Eun Hyun Kim ,  Sun Hee Lee ,  Jun Hyung Lim

IPC: H01L27/32 ,  H01L51/56 ,  H10K59/12 ,  H10K59/121 ,  H10K59/124 ,  H10K59/131 ,  H10K71/00 ,  H10K102/00

CPC classification number: H10K59/131 ,  H10K59/1201 ,  H10K59/1213 ,  H10K59/124 ,  H10K71/00 ,  H10K2102/351

Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

公开(公告)号：US12068334B2

公开(公告)日：2024-08-20

申请号：US17039474

申请日：2020-09-30

Applicant: Samsung Display Co., LTD.

Inventor： Kyung Jin Jeon ,  Eok Su Kim ,  Joon Seok Park ,  So Young Koo ,  Tae Sang Kim ,  Jun Hyung Lim

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1288 ,  H01L27/1225 ,  H01L27/124

Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

公开(公告)号：US12029080B2

公开(公告)日：2024-07-02

申请号：US17467418

申请日：2021-09-06

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Duck Kyun Choi ,  Myeong Ho Kim ,  Jun Hyung Lim

IPC: H10K59/126 ,  G09G3/3233 ,  H01L27/02 ,  H10K59/121 ,  H10K59/131 ,  H01L27/12 ,  H01L29/786

CPC classification number: H10K59/126 ,  G09G3/3233 ,  H01L27/0255 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/131 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78675 ,  H01L29/7869

Abstract: A display device includes a light emitting element, a first transistor, a second transistor, and a diode. The first transistor may control a driving current flowing to the light emitting element depending on a voltage applied to a gate electrode of the first transistor. The second transistor is electrically connected between the gate electrode of the first transistor and a first electrode of the first transistor. A first electrode of the diode is electrically connected to a first electrode of the second transistor. A second electrode of the diode is electrically connected to the gate electrode of the first transistor.

公开(公告)号：US12022690B2

公开(公告)日：2024-06-25

申请号：US17244857

申请日：2021-04-29

Applicant: Samsung Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Jun Hyung Lim ,  Hyungjun Kim ,  Hyungjun Kim ,  Young Jun Kim ,  Ju Sang Park ,  Whang Je Woo

IPC: H10K59/121 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786 ,  H10K59/12 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K71/00 ,  H01L21/02568 ,  H01L21/0262 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7606 ,  H01L29/78696 ,  H10K59/1201

Abstract: A method may be used for manufacturing a semiconductor element. The method may include the following steps: preparing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes crystallized two-dimensional layers; forming a source electrode and a drain electrode on the semiconductor layer; forming an semiconductor member by wet etching the semiconductor layer using sodium hypochlorite as an etchant, wherein the wet etching results in a residue; and removing the residue using purified water and an inert gas.

公开(公告)号：US12016211B2

公开(公告)日：2024-06-18

申请号：US18161844

申请日：2023-01-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Hong Kim ,  Eun Hye Ko ,  Eun Hyun Kim ,  Kyoung Won Lee ,  Sun Hee Lee ,  Jun Hyung Lim

IPC: H10K59/126 ,  G09G3/3208 ,  H01L27/12 ,  H01L29/786 ,  H10K50/80 ,  H10K59/12 ,  H10K59/131 ,  H10K59/121

CPC classification number: H10K59/126 ,  H10K59/1315 ,  H01L27/124 ,  H10K59/1201 ,  H10K59/1213

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.