公开(公告)号：US20150348799A1

公开(公告)日：2015-12-03

申请号：US14824786

申请日：2015-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  C09K13/06

CPC classification number: H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US20150200112A1

公开(公告)日：2015-07-16

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/3213 ,  H01L29/423 ,  C23F1/16 ,  H01L21/02

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。

公开(公告)号：US12254234B2

公开(公告)日：2025-03-18

申请号：US18608190

申请日：2024-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchan Woo ,  Donghee Kang ,  Choonkyoung Moon ,  Christian Park ,  Joayoung Lee ,  Jiwon Jeon ,  Hoon Han

IPC: G09G5/00 ,  G06F3/01 ,  G06F3/14 ,  G06T11/00 ,  G06V20/20 ,  G06F3/0482

Abstract: A method and a device capable of supporting various display methods using an electronic device and/or glasses-type wearable electronic device (e.g., AR glasses) in an augmented reality (AR) are provided. An AR providing device for AR services includes a display and a processor. The processor is configured to provide content through an AR screen, detect a specified external object through the AR screen while providing the content, determine a display mode for providing the content, based on detection of the specified external object, control to display the content through a display of the specified external object, based on the determined display mode, and perform control to display the content through a virtual display area associated with the specified external object on the AR screen, based on the determined display mode.

公开(公告)号：USD1053187S1

公开(公告)日：2024-12-03

申请号：US29900764

申请日：2023-08-24

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US12046464B2

公开(公告)日：2024-07-23

申请号：US17719561

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ga Young Song ,  Mi Hyun Park ,  Jong Kyoung Park ,  Jung Youl Lee ,  Hyun Jin Kim ,  Hyo San Lee ,  Han Sol Lim ,  Hoon Han

IPC: C11D1/00 ,  C11D3/20 ,  C11D3/37 ,  H01L21/02

CPC classification number: H01L21/02041 ,  C11D3/2003 ,  C11D3/2079 ,  C11D3/3749

Abstract: A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-1a and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

公开(公告)号：US11847258B2

公开(公告)日：2023-12-19

申请号：US17520946

申请日：2021-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Insik Myung ,  Shinjae Jung ,  Inyoung Choi ,  Hoon Han

IPC: G06F3/01 ,  G06T19/00

CPC classification number: G06F3/013 ,  G06F3/011 ,  G06T19/006

Abstract: There is disclosed an augmented reality (AR) glasses device including: a camera, a transparent display, a communication circuit, a memory storing images of a plurality of external electronic devices, and a processor. The processor may be configured to control the AR glasses device to: acquire an image including an image of at least one external electronic device, acquire running application information of the at least one external electronic device, identify a first external electronic device corresponding to a gaze from among the at least one external electronic device from the acquired image, determine whether a specified application is running in the first external electronic device based on the running application information, and connect to the first external electronic device using a communication circuit, based on the specified application running.

公开(公告)号：USD1007454S1

公开(公告)日：2023-12-12

申请号：US29863683

申请日：2022-12-21

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

Abstract: FIG. 1 is a front perspective view of an electronic device showing our new design;
FIG. 2 is a front elevation view thereof;
FIG. 3 is a rear elevation view thereof;
FIG. 4 is a left side elevation view thereof;
FIG. 5 is a right side elevation view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is an enlarged view of the encircled portion in FIG. 1;
FIG. 9 is an enlarged view of the encircled portion in FIG. 1; and,
FIG. 10 is an enlarged view of the encircled portion in FIG. 5.
The short dash-dash broken lines in the figures illustrate portions of the electronic device that form no part of the claimed design. The dot-dot-dash broken lines encircling portions of the claimed design that are illustrated in enlargements form no part of the claimed design.

公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

公开(公告)号：USD964336S1

公开(公告)日：2022-09-20

申请号：US29763658

申请日：2020-12-23

Applicant: Samsung Electronics Co., Ltd.

Designer： Seo Lee ,  Seungchan Lee ,  Sangchulmatt Lee ,  Hoon Han ,  Yunjeong Ji ,  Seonkeun Park ,  Duyeong Choi

公开(公告)号：US11437246B2

公开(公告)日：2022-09-06

申请号：US17008736

申请日：2020-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchan Kim ,  Youngtak Kim ,  Jungah Kim ,  Hoon Han ,  Geunjoo Baek ,  Chisung Ihn ,  Sangmoon Yun

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/311

Abstract: Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.