公开(公告)号：US20200243723A1

公开(公告)日：2020-07-30

申请号：US16851354

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Il KIM ,  Hyong Sik WON ,  Wan Tae LIM ,  Nam Goo CHA

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/44 ,  H01L33/08 ,  H01L33/32

Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.

公开(公告)号：US20180182931A1

公开(公告)日：2018-06-28

申请号：US15684144

申请日：2017-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Gun LEE ,  Yong Il KIM ,  Young Soo PARK ,  Jin Sub LEE ,  Wan Tae LIM

IPC: H01L33/50 ,  H01L33/46 ,  H01L25/075

Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.

公开(公告)号：US20180047780A1

公开(公告)日：2018-02-15

申请号：US15449396

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye YEON ,  Sung Hyun SIM ,  Wan Tae LIM ,  Yong Il KIM ,  Hanul YOO

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US20170294479A1

公开(公告)日：2017-10-12

申请号：US15413079

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo CHA ,  Yong Il KIM ,  Young Soo PARK

IPC: H01L27/15 ,  H01L33/52 ,  H01L25/065 ,  H01L33/44 ,  H01L33/00 ,  H01L33/62 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L25/0655 ,  H01L25/0753 ,  H01L33/0012 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/50 ,  H01L33/507 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.

公开(公告)号：US20160056118A1

公开(公告)日：2016-02-25

申请号：US14693749

申请日：2015-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Yong Il KIM ,  Myong Soo CHO

IPC: H01L23/00 ,  H01L33/62

CPC classification number: H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2224/1607 ,  H01L2224/16106 ,  H01L2224/16258 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014

Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.

Abstract translation: 半导体发光器件包括多区域焊盘。 半导体发光器件包括具有第一表面和第二表面的发光二极管（LED）芯片，第一表面设置有第一和第二电极以及与第一表面相对的第二表面。 钝化层设置在LED芯片的表面上，使得第一和第二电极的接合区域通过钝化层露出。 在每个相应的接合区域中设置有焊盘，并且具有多个分离的区域。 焊料凸块设置在每个相应的接合区域中并且覆盖相应焊垫的多个分离区域。 在半导体发光器件中，通过确保焊盘和焊料凸块之间的界面不被完全损坏，从而可以有效地防止焊盘和焊料凸点之间的分离。

公开(公告)号：US20140048838A1

公开(公告)日：2014-02-20

申请号：US13929431

申请日：2013-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In YANG ,  Yong Il KIM ,  Kwang Min SONG ,  Wan Tae LIM ,  Se Jun HAN ,  Hyun Kwon HONG

IPC: H01L33/62

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract translation: 半导体发光器件包括第一导电半导体层，有源层，第二导电半导体层，第一内部电极，第二内部电极，绝缘部分以及第一和第二焊盘电极。 有源层设置在第一导电半导体层的第一部分上，并且其上设置有第二导电层。 第一内部电极设置在与第一部分分离的第一导电半导体层的第二部分上。 第二内部电极设置在第二导电半导体层上。 绝缘部分设置在第一和第二内部电极之间，并且第一和第二焊盘电极设置在绝缘部分上以连接到第一和第二内部电极中的相应一个。