公开(公告)号：US20060051920A1

公开(公告)日：2006-03-09

申请号：US10535941

申请日：2003-11-28

申请人： Shinya Yamaguchi ,  Masahiko Ando ,  Toshikazu Shimada ,  Natsuki Yokoyama ,  Shunri Oda ,  Nobuyoshi Koshida

发明人： Shinya Yamaguchi ,  Masahiko Ando ,  Toshikazu Shimada ,  Natsuki Yokoyama ,  Shunri Oda ,  Nobuyoshi Koshida

IPC分类号： H01L21/336

CPC分类号： H01L29/7881 ,  G11C23/00

摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).

摘要翻译： 一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（​​5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取 ）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

公开(公告)号：US6060723A

公开(公告)日：2000-05-09

申请号：US95058

申请日：1998-06-10

申请人： Kazuo Nakazato ,  Kiyoo Itoh ,  Hiroshi Mizuta ,  Toshikazu Shimada ,  Hideo Sunami ,  Tatsuya Teshima ,  Toshiyuki Mine ,  Ken Yamaguchi

发明人： Kazuo Nakazato ,  Kiyoo Itoh ,  Hiroshi Mizuta ,  Toshikazu Shimada ,  Hideo Sunami ,  Tatsuya Teshima ,  Toshiyuki Mine ,  Ken Yamaguchi

IPC分类号： G11C11/16 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108 ,  H01L27/11 ,  H01L29/15 ,  H01L29/423 ,  H01L29/772 ,  H01L29/786 ,  H01L29/788 ,  H01L29/88 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L27/10858 ,  B82Y10/00 ,  G11C11/16 ,  H01L21/28273 ,  H01L27/10808 ,  H01L27/1082 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/11 ,  H01L29/154 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/772 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78687 ,  H01L29/7881 ,  H01L29/882

摘要： A controllable conduction device in the form of a transistor comprises source and drain regions 5, 2 between which extends a conduction path P for charge carriers, a gate 4 for controlling charge carrier flow along the conduction path and a multiple layer structure 3 providing a multiple tunnel junction configuration in the conduction path, with the result that current leakage is blocked by the multiple tunnel junction configuration when the transistor is in its off state. Vertical and lateral transistor configurations are described, together with use of the transistor in complimentary pairs and for a random access memory cell. Improved gate structures are described which are also applicable to memory devices that incorporate the tunnel barrier configuration to store charge on the memory node.

公开(公告)号：US5523592A

公开(公告)日：1996-06-04

申请号：US189865

申请日：1994-02-01

申请人： Kiyokazu Nakagawa ,  Akio Nishida ,  Toshikazu Shimada

发明人： Kiyokazu Nakagawa ,  Akio Nishida ,  Toshikazu Shimada

IPC分类号： H01L27/15 ,  H01L33/34 ,  H01S5/026 ,  H01S5/183 ,  H01S5/34 ,  H01L33/00 ,  H01L31/0312 ,  H01S3/19

CPC分类号： H01L33/34 ,  B82Y20/00 ,  H01L27/15 ,  H01S5/0262 ,  H01S5/183 ,  H01S5/3427

摘要： By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si.sub.0.8 Ge.sub.0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si.sub.1-B C.sub.B layer on it, iii) mounting an n-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer and Si.sub.0.8 Ge.sub.0.2 layer, an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer, and a p-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer sequentially on it or iv) mounting an n type single crystalline Si layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si layer and Si.sub.0.8 Ge.sub.0.1 Sn.sub.0.1 layer, an undoped single crystalline Si layer, and a p type single crystalline Si layer sequentially on it, a semiconductor optical device is obtained.

摘要翻译： i）在n-Si（100）衬底上形成未掺杂的单晶Si层和单晶Si0.8Ge0.2混合晶层的层状结构，其上第二未掺杂单晶Si层和ap型氢化无定形 Si1-BCB层，iii）在n-Si（100）衬底上安装n-Si0.55Ge0.40C0.05层，并形成未掺杂的单晶Si0.55Ge0.40C0.05层和Si0 8Ge0.2层，未掺杂的单晶Si0.55Ge0.40C0.05层和p-Si0.55Ge0.40C0.05层，或者iv）在n-Si上安装n型单晶Si层 （100）衬底并依次形成未掺杂的单晶Si层和Si0.8Ge0.1Sn0.1层，未掺杂的单晶Si层和ap型单晶Si层的层状结构，得到半导体光学器件 。

公开(公告)号：US4721535A

公开(公告)日：1988-01-26

申请号：US892286

申请日：1986-08-04

申请人： Haruo Itoh ,  Toshikazu Shimada ,  Shin-ichi Muramatsu ,  Sunao Matsubara ,  Nobuo Nakamura

发明人： Haruo Itoh ,  Toshikazu Shimada ,  Shin-ichi Muramatsu ,  Sunao Matsubara ,  Nobuo Nakamura

IPC分类号： H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/06

CPC分类号： H01L31/076 ,  H01L31/075 ,  Y02E10/548 ,  Y10S148/16

摘要： A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to 300 .ANG. and at least one p-type doped amorphous silicon layer of a given thickness. The p-type doped amorphous silicon layer is stacked such that at least one face thereof is in contact with said at least one non-doped layer of amorphous silicon material so that the thin film of multi-layer structure exhibits in effect p-type conductivity.

摘要翻译： 一种太阳能电池，至少包括由非晶硅材料形成并具有p型导电性的薄膜。 该薄膜包括多层结构，该多层结构包括由非晶硅材料的材料形成的至少一个非掺杂层，并且具有10至300埃的厚度和至少一个给定厚度的p型掺杂非晶硅层 。 堆叠p型掺杂非晶硅层，使得其至少一个面与所述至少一个非掺杂非晶硅材料层接触，使得多层结构的薄膜具有p型导电性 。

公开(公告)号：US4672015A

公开(公告)日：1987-06-09

申请号：US809183

申请日：1985-12-16

申请人： Eiichi Maruyama ,  Makoto Fujikura ,  Hirokazu Matsubara ,  Toshikazu Shimada

发明人： Eiichi Maruyama ,  Makoto Fujikura ,  Hirokazu Matsubara ,  Toshikazu Shimada

IPC分类号： G03G5/04 ,  G03G5/08 ,  G03G5/082

CPC分类号： G03G5/08 ,  G03G5/08235 ,  G03G5/0825

摘要： The invention relates to an electrophotographic member which is highly sensitive to the light of long wavelengths. Amorphous silicon is used as a photosensitive base member. A long wavelength sensitizing region has a narrower forbidden band gap width than that of the base member, and consists of at least two semiconductor films that are laminated and that have at least different forbidden band gap widths or different conductivities. An increased number of semiconductor films may, of course, be laminated to constitute the sensitizing region.

摘要翻译： PCT No.PCT / JP84 / 00598 Sec。 371日期1985年12月16日第 102（e）日期1985年12月16日PCT提交1984年12月14日PCT公布。 出版物WO85 / 02691 1985年6月20日，日本公开本发明涉及对长波长的光敏感的电子照相部件。 非晶硅用作感光基材。 长波长增感区域具有比基底构件更窄的禁带宽度宽度，并且由至少两层叠层并具有至少不同禁带宽度或不同导电率的半导体膜组成。 当然，可以层叠增加数量的半导体膜以构成敏化区域。

公开(公告)号：US4613382A

公开(公告)日：1986-09-23

申请号：US710953

申请日：1985-03-14

申请人： Yoshifumi Katayama ,  Toshikazu Shimada ,  Eiichi Maruyama

发明人： Yoshifumi Katayama ,  Toshikazu Shimada ,  Eiichi Maruyama

IPC分类号： H01L29/78 ,  H01L21/205 ,  H01L21/86 ,  H01L29/04 ,  H01L29/167 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/04 ,  H01L21/223 ,  H01L21/322

CPC分类号： H01L21/0242 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/167 ,  H01L29/78672 ,  H01L29/78684 ,  H01L31/03682 ,  Y02E10/546 ,  Y10S438/958

摘要： A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium, and cesium included mainly around grain boundaries of the polycrystalline semiconductor film. The simultaneous inclusion of one of the halogen elements and one of the monovalent metal elements of the group described above is more effective to quench charges of the elements included. The content of the elements included is up to 40% by atomic ratio. As a result, the electronic characteristic of the polycrystalline semiconductor film are substantially improved.

摘要翻译： 半导体器件包括具有选自氢，氟，氯，溴，碘，锂，钠，钾，铷和铯中的至少一种元素的多晶半导体膜体，主要在多晶半导体膜的晶界周围 。 同时包含上述卤素元素和一价金属元素中的一种对于包含的元素的猝灭电荷更有效。 所含元素的含量高达原子比的40％。 结果，多晶半导体膜的电子特性显着提高。

公开(公告)号：US4289822A

公开(公告)日：1981-09-15

申请号：US48740

申请日：1979-06-15

申请人： Toshikazu Shimada ,  Yoshifumi Katayama ,  Kiichi F. Komatsubara

发明人： Toshikazu Shimada ,  Yoshifumi Katayama ,  Kiichi F. Komatsubara

IPC分类号： C01B31/36 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  H01L31/0248 ,  H01L31/04 ,  B32B7/12 ,  B32B9/04

CPC分类号： G03G5/08235 ,  G03G5/0433 ,  G03G5/082 ,  G03G5/08242 ,  Y10S428/913 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/31504

摘要： A photoconductive material comprising an amorphous substance whose indispensable constituent elements are silicon, carbon and hydrogen is disclosed. The photoconductive material preferably has a structure expressed by [Si.sub.1-x C.sub.x ].sub.1-y [H].sub.y where 0.02.ltoreq.x.ltoreq.0.3 and 0.02.ltoreq.y.ltoreq.0.3. Up to 40% of the carbon can be substituted by germanium. The peak of response can be established for light of any desired wavelength between approximately 5,600 A-4,500 A. This photoconductive material is particularly useful when applied to a light-sensitive film which is operated in the storage mode. The light-sensitive film includes the photoconductive material in a region in which pairs of free electrons and positive holes are created upon incidence of light.

摘要翻译： 公开了一种包含其不可缺少的构成元素是硅，碳和氢的无定形物质的光导材料。 光导材料优选具有由[Si1-xCx] 1-y [H] y表示的结构，其中0.02