摘要:
A semiconductor device, such as an FET or a charge coupled device, is provided having a channel or a charge coupled portion formed in a thin semiconductor layer which is substantially perpendicular to the substrate. Necessary electrodes, such as the gate electrode, and necessary insulating layers can be added at the thin semiconductor layer, and can maintain the necessary amount of electric current by securing the height of the semiconductor layer. The structure has the advantage that it can have its plane size reduced. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.
摘要:
Herein disclosed is a semiconductor device of high density. The semiconductor device having a high density and a microstructure is required to have a high breakdown voltage and a high speed even with a low supply voltage. The semiconductor device comprises: a semiconductor body; a gate insulating film formed over the body; and a MOS transistor having a source/drain region formed in the body and a gate electrode film formed over the gate insulating film. The gate electrode film is composed of two or more films having different etching rates. The gate etching is stopped at the interface of the composite film to form an inverse-T gate electrode structure; and in that an electric conduction is observed between the component films. Thus, the overlap between the gate and the drain can be controlled.
摘要:
A memory is disclosed which uses a microcapacitor as a data storage portion. The microcapacitor uses as its main electrode surface the side wall of a first trench formed on a semiconductor substrate, and is fabricated by diffusing an impurity from a second diffusion trench adjacent to the first trench by setting the shapes and diffusion conditions of the first and second trenches so that the tip of the diffusion layer reaches the side wall of the first trench. The capacitor uses the diffusion layer as one of the electrodes. An insulating film is deposited on the side wall of the first trench and an electrode as the other electrode of the capacitor is deposited on this insulating film. The memory can reduce a leakage current between memory cells by connecting the capacitor to a transistor fabricated in the same semiconductor substrate, and can be formed within a limited space.
摘要:
There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
摘要:
There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
摘要:
An inspection method and apparatus for discriminating the foreign particles on the surface of a sample from the foreign particles or defects within the sample, and a semiconductor-device producing method using the inspection method and apparatus. The inspection apparatus includes a light source, a first optical system that causes the light from the source to be directed to the sample, a second optical system for condensing the light coming back from the sample, a polarizing prism for separating the condensed light into polarized components, and optical detectors, for detecting the polarized components. The two optical systems, are arranged for their optical axes to make an angle of 50.degree. to 120.degree. relative to each other. The foreign particles on the surface of the sample and the foreign particles or defects within the sample are respectively discriminated from each other as side scattered light and backward scattered light by utilizing the difference between the intensity ratios of the polarized light components.
摘要:
A semiconductor device such as FET or charge coupled device, having a channel or a charge coupled portion provided in a thin semiconductor layer which is nearly perpendicular to the substrate and to which the necessary electrode such as the gate electrode and the necessary insulating layer are added can maintain the necessary amount of electric current by securing the height of the semiconductor layer and also can have its plane size reduced minutely. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.
摘要:
A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. In a fifth aspect, the capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure. In sixth and seventh aspects, wiring is provided. In the sixth aspect, an aluminum wiring layer and a protective (and/or barrier) layer are formed by sputtering in the same vacuum sputtering chamber without breaking the vacuum between forming the layers; in the seventh aspect, a refractory metal, or a refractory metal silicide QSI.sub.x, where Q is a refractory metal and 0
摘要:
Disclosed is a semiconductor device including a charge storage capacitor having a storage electrode which is electrically connected to a switching transistor through a contact hole provided in an insulator and which has a greater film thickness than the radius of the contact hole, at least a part of the storage electrode being disposed above a data line. It is possible to reduce the memory cell area while preventing lowering in the capacitance, and thus realize high density and high integration of semiconductor devices.
摘要:
A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.