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    Semiconductor light emitting device with an aluminum containing layer formed thereon
    23.
    发明授权
    Semiconductor light emitting device with an aluminum containing layer formed thereon 有权
    其上形成有铝层的半导体发光器件

    公开(公告)号：US09093588B2

    公开(公告)日：2015-07-28

    申请号：US13032907

    申请日：2011-02-23

    申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/26 ,  H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

    Semiconductor light emitting device and manufacturing method of the same
    24.
    发明授权
    Semiconductor light emitting device and manufacturing method of the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08729575B2

    公开(公告)日：2014-05-20

    申请号：US13215628

    申请日：2011-08-23

    申请人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Hung Hung ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L31/072

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/3063 ,  H01S2304/04

    摘要： The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm3 and 1E20 atoms/cm3 inclusive. The carbon concentration is equal to or less than 6E17 atoms/cm3. Where the magnesium concentration is denoted by X and the acceptor concentration is denoted by Y, Y>{(−5.35e19)2−(X−2.70e19)2}1/2−4.63e19 holds.

    摘要翻译： 根据实施例的半导体发光器件包括N型氮化物半导体层，设置在N型氮化物半导体层上的氮化物半导体有源层和设置在有源层上的P型氮化物半导体层。 P型氮化物半导体层包括氮化镓铝层。 氮化镓铝层中的铟浓度在​​1E18原子/ cm3至1E20原子/ cm3之间。 碳浓度等于或小于6E17原子/ cm3。 当镁浓度用X表示，受主浓度用Y表示时，Y> {（ - 5.35e19）2-（X-2.70e19）2} 1 / 2-4.63e19成立。

    LIGHT EMITTING DEVICE
    26.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20110157864A1

    公开(公告)日：2011-06-30

    申请号：US12876774

    申请日：2010-09-07

    申请人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

    发明人： Yasushi HATTORI ,  Masaki Tohyama ,  Shinji Saito ,  Shinya Nunoue ,  Maki Sugai ,  Rei Hashimoto

    IPC分类号： F21V9/16

    CPC分类号： F21K9/68 ,  G02F1/133615 ,  G02F2001/133614

    摘要： According to embodiments, a light emitting device is provided. The light emitting device includes a semiconductor laser diode that emits a laser beam; first and second sidewalls that are disposed along a central beam axis of the laser beam with opposite each other; a phosphor layer that is provided between the first and second sidewalls, the phosphor layer including an incidence surface of the laser beam, the incidence surface being provided while inclined with respect to the central beam axis, the phosphor layer absorbing the laser beam to emit visible light on the incidence surface side; a slit that is provided on the incidence surface side of the phosphor layer to take out the visible light, the slit including a longitudinal direction and a crosswise direction, the longitudinal direction being disposed along a direction of the central beam axis; and a reflector that is provided on the slit side of the semiconductor laser diode so as not to intersect the central beam axis, the reflector reflecting part of the laser beam toward the phosphor layer.

    摘要翻译： 根据实施例，提供了一种发光器件。 发光器件包括发射激光束的半导体激光二极管; 第一和第二侧壁沿着激光束的中心束轴设置，彼此相对; 设置在第一和第二侧壁之间的磷光体层，所述荧光体层包括激光束的入射表面，所述入射表面相对于所述中心束轴倾斜设置，所述荧光体层吸收所述激光束以发射可见光 光在入射面一侧; 狭缝，其设置在所述荧光体层的入射面侧以取出所述可见光，所述狭缝包括纵向和横向，所述纵向方向沿着所述中心射束轴线的方向设置; 以及设置在半导体激光二极管的狭缝侧以不与中心束轴相交的反射器，反射器将激光束的一部分反射向荧光体层。

    Light-emitting apparatus, display apparatus, and light emitter
    28.
    发明授权
    Light-emitting apparatus, display apparatus, and light emitter 失效
    发光装置，显示装置和发光体

    公开(公告)号：US08450918B2

    公开(公告)日：2013-05-28

    申请号：US12874778

    申请日：2010-09-02

    申请人： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

    发明人： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

    IPC分类号： F21V9/16 ,  G02B26/00

    CPC分类号： G03B21/204 ,  F21K9/232 ,  F21K9/64 ,  H01L33/504

    摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.

    摘要翻译： 根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。 发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。