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    Method for manufacturing semiconductor device using a laser annealing process
    22.
    发明授权
    Method for manufacturing semiconductor device using a laser annealing process 有权
    使用激光退火工艺制造半导体器件的方法

    公开(公告)号：US08329520B2

    公开(公告)日：2012-12-11

    申请号：US12750739

    申请日：2010-03-31

    申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi

    发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1251 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L27/1281

    摘要： An island-shaped single crystal semiconductor layer whose top surface has a plane within ±10° from a {211} plane is formed on an insulating surface; a non-single-crystal semiconductor layer is formed in contact with the top surface and a side surface of the single crystal semiconductor layer and on the insulating surface; the non-single-crystal semiconductor layer is irradiated with laser light to melt the non-single-crystal semiconductor layer, and to crystallize the non-single-crystal semiconductor layer formed on the insulating surface with use of the single crystal semiconductor layer as a seed crystal, so that a crystalline semiconductor layer is formed. A semiconductor device having an n-channel transistor and a p-channel transistor formed with use of the crystalline semiconductor layer is provided.

    摘要翻译： 在绝缘面上形成顶面与{211}面成±10°以内的岛状单晶半导体层， 形成与单晶半导体层的顶表面和侧表面以及绝缘表面接触的非单晶半导体层; 用激光照射非单晶半导体层以熔化非单晶半导体层，并且使用单晶半导体层将形成在绝缘表面上的非单晶半导体层结晶为 晶种，从而形成结晶半导体层。 提供了具有使用晶体半导体层形成的n沟道晶体管和p沟道晶体管的半导体器件。

    SEMICONDUCTOR DEVICE
    23.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110084273A1

    公开(公告)日：2011-04-14

    申请号：US12900145

    申请日：2010-10-07

    申请人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

    发明人： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Junichiro Sakata

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78696

    摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

    摘要翻译： 其目的之一是提供具有稳定电特性的半导体器件，其中使用氧化物半导体。 该半导体器件包括薄膜晶体管，该薄膜晶体管包括氧化物半导体层，以及位于薄膜晶体管上的氧化硅层。 薄膜晶体管包括栅极电极层，厚度等于或大于100nm且等于或小于350nm的栅极绝缘层，氧化物半导体层，源极电极层和漏极电极层。 在薄膜晶体管中，在将温度为85°的栅极电极层施加30V或-30V的电压的测量之前和之后，阈值电压值的差为1V以下 C.持续12小时。

    SEMICONDUCTOR DEVICE
    24.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110084268A1

    公开(公告)日：2011-04-14

    申请号：US12898366

    申请日：2010-10-05

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

    IPC分类号： H01L29/12 ,  H01L21/16

    CPC分类号： H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

    摘要： It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

    摘要翻译： 本发明的目的是提供一种由具有良好的显示质量的显示装置代表的半导体器件，其中在半导体层和电极之间的连接部分中产生的寄生电阻被抑制，并且具有诸如电压降等的不利影响 防止由于布线电阻而导致像素的信号布线，灰度级的缺陷等。 为了实现上述目的，根据本发明的半导体器件可以具有这样的结构，其中具有低电阻的布线连接到薄膜晶体管，其中包括具有高氧亲和力的金属的源电极和漏电极是 连接到具有抑制的杂质浓度的氧化物半导体层。 另外，包含氧化物半导体的薄膜晶体管也可以被要被密封的绝缘膜包围。

    Processing apparatus, system, method and program for processing information to be shared
    28.
    发明授权
    Processing apparatus, system, method and program for processing information to be shared 有权
    用于处理要共享的信息的处理装置，系统，方法和程序

    公开(公告)号：US09398233B2

    公开(公告)日：2016-07-19

    申请号：US13880267

    申请日：2012-07-10

    申请人： Hiroshi Kyusojin ,  Yoichi Mizutani ,  Yutaka Hasegawa ,  Masahiro Takahashi

    发明人： Hiroshi Kyusojin ,  Yoichi Mizutani ,  Yutaka Hasegawa ,  Masahiro Takahashi

    IPC分类号： G06K9/00 ,  H04N5/265 ,  H04N7/15 ,  H04M3/56 ,  G06F19/00 ,  H04L12/18

    CPC分类号： H04N5/265 ,  G06F19/00 ,  G06F19/321 ,  G16H80/00 ,  H04L12/1827 ,  H04M3/567 ,  H04N7/15

    摘要： An information processing apparatus, an information processing system, and a method of processing information are provided. In one embodiment, the information processing apparatus includes a processor, and a memory device storing instructions. When executed by the processor, the instructions cause the processor to receive, from a first information processing apparatus, area specifying information and location information, the area specifying information specifying a display area in an image, the display area including a plurality of partial images, the location information indicating at least one location of the plurality of partial images. The instructions further cause the processor to transmit, to a second information processing apparatus, the area specifying information and the location information.

    摘要翻译： 提供信息处理装置，信息处理系统和处理信息的方法。 在一个实施例中，信息处理设备包括处理器和存储指令的存储器件。 当处理器执行时，指令使得处理器从第一信息处理设备接收区域指定信息和位置信息，区域指定信息指定图像中的显示区域，显示区域包括多个部分图像， 所述位置信息指示所述多个部分图像中的至少一个位置。 所述指令还使所述处理器向所述第二信息处理设备发送所述区域指定信息和所述位置信息。

    Laser lap welding method
    29.
    发明授权
    Laser lap welding method 有权
    激光搭接焊接方法

    公开(公告)号：US09308602B2

    公开(公告)日：2016-04-12

    申请号：US13333349

    申请日：2011-12-21

    申请人： Kazuhiro Hayashimoto ,  Yuta Fujinuma ,  Tsukasa Hagihara ,  Shuichi Usui ,  Yoshitaka Sanuki ,  Masahiro Takahashi

    发明人： Kazuhiro Hayashimoto ,  Yuta Fujinuma ,  Tsukasa Hagihara ,  Shuichi Usui ,  Yoshitaka Sanuki ,  Masahiro Takahashi

    IPC分类号： B23K26/28 ,  B23K26/32

    CPC分类号： B23K26/28 ,  B23K26/082 ,  B23K26/244 ,  B23K26/32 ,  B23K26/322 ,  B23K2101/006 ,  B23K2101/18 ,  B23K2101/34 ,  B23K2103/04 ,  B23K2103/08 ,  B23K2103/50

    摘要： A laser lap welding method by irradiating of a laser beam from one side of a plurality of overlapped workpieces (1, 2), the method includes the steps of: scanning (La) the laser beam in the forward direction along a predetermined section of the workpieces; reversing the scanning direction of the laser beam at a terminating end (t) of the predetermined section; scanning (Lb) the laser beam in the backward direction and terminating of the irradiating of the laser beam onto the predetermined section, wherein the scanning of the laser beam in the backward direction is offset from the scanning of the laser beam in the forward direction such that a part of weld bead (12) formed by the laser scanning in the backward direction overlaps the weld bead (11) formed by the laser scan in the forward direction.

    摘要翻译： 一种通过从多个重叠工件（1,2）的一侧照射激光束的激光搭接焊接方法，所述方法包括以下步骤：沿着向前方向沿着预定部分扫描（La）激光束 工件 在所述预定部分的终止端（t）反转所述激光束的扫描方向; 沿着反方向扫描（Lb）激光束并终止将激光束照射到预定部分上，其中激光束沿向后方向的扫描偏离激光束在向前方向上的扫描，例如 通过沿向后方向的激光扫描形成的焊道（12）的一部分与沿着向前方向的激光扫描形成的焊道（11）重叠。

    Resistance change memory
    30.
    发明授权
    Resistance change memory 有权
    电阻变化记忆

    公开(公告)号：US09123412B2

    公开(公告)日：2015-09-01

    申请号：US14018011

    申请日：2013-09-04

    申请人： Masahiro Takahashi ,  Dong Keun Kim ,  Hyuck Sang Yim

    发明人： Masahiro Takahashi ,  Dong Keun Kim ,  Hyuck Sang Yim

    IPC分类号： G11C11/00 ,  G11C13/00

    CPC分类号： G11C13/003 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C2013/0054

    摘要： According to one embodiment, a resistance change memory includes the following configuration. A first inverter includes first input and first output terminals and first and second voltage terminals. A second inverter includes second input and second output terminals and third and fourth voltage terminals. The second input terminal is connected to the first output terminal. The second output terminal is connected to the first input terminal. First and second transistors are connected to the first and second output terminals, respectively. Third and fourth transistors are connected to the first and third voltage terminals, respectively. A fifth transistor is connected between the first voltage terminal and the first memory cell. A sixth transistor is connected to the third voltage terminal. A controller turns on the first and second transistors, after turning off the fifth and sixth transistors.

    摘要翻译： 根据一个实施例，电阻变化存储器包括以下配置。 第一反相器包括第一输入端和第一输出端以及第一和第二电压端。 第二反相器包括第二输入端和第二输出端以及第三和第四电压端。 第二输入端子连接到第一输出端子。 第二输出端子连接到第一输入端子。 第一和第二晶体管分别连接到第一和第二输出端子。 第三和第四晶体管分别连接到第一和第三电压端子。 第五晶体管连接在第一电压端和第一存储单元之间。 第六晶体管连接到第三电压端子。 在关闭第五和第六晶体管之后，控制器接通第一和第二晶体管。