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    HETEROSTRUCTURE AND METHOD OF FABRICATION
    21.
    发明申请
    HETEROSTRUCTURE AND METHOD OF FABRICATION 审中-公开

    公开(公告)号：US20200280298A1

    公开(公告)日：2020-09-03

    申请号：US16877309

    申请日：2020-05-18

    Applicant: Soitec

    Inventor： Arnaud Castex ,  Daniel Delprat ,  Bernard Aspar ,  Ionut Radu

    IPC: H03H9/02 ,  H01L41/312 ,  H01L41/08 ,  H01L41/313 ,  H03H3/10

    Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

    METHOD FOR BONDING SEMICONDUCTOR WAFERS USING A MOLECULAR BONDING APPARATUS
    24.
    发明申请
    METHOD FOR BONDING SEMICONDUCTOR WAFERS USING A MOLECULAR BONDING APPARATUS 审中-公开
    使用分子结合装置粘合半导体波长的方法

    公开(公告)号：US20150279830A1

    公开(公告)日：2015-10-01

    申请号：US14722794

    申请日：2015-05-27

    Applicant: Soitec

    Inventor： Marcel Broekaart ,  Ionut Radu

    IPC: H01L25/00

    CPC classification number: H01L25/50 ,  B32B38/1858 ,  B32B2309/64 ,  B32B2309/65 ,  B32B2309/68 ,  H01L21/67092 ,  H01L2924/0002 ,  Y10T156/10 ,  H01L2924/00

    Abstract: The present invention relates to an apparatus for the manufacture of semiconductor devices wherein the apparatus includes a bonding module that has a vacuum chamber to provide bonding of wafers under pressure below atmospheric pressure; and a loadlock module connected to the bonding module and configured for wafer transfer to the bonding module. The loadlock module is also connected to a first vacuum pumping device configured to reduce the pressure in the loadlock module to below atmospheric pressure. The bonding and loadlock modules remain at a pressure below atmospheric pressure while the wafer is transferred from the loadlock module into the bonding module.

    Abstract translation: 本发明涉及一种用于制造半导体器件的装置，其中所述装置包括具有真空室的接合模块，以在低于大气压的压力下提供晶片的接合; 以及负载锁模块，其连接到所述接合模块并且被配置为用于晶片转移到所述接合模块。 负载锁模块还连接到第一真空泵装置，其被配置成将负载锁模块中的压力降低到低于大气压。 接合和负载锁定模块保持在低于大气压力的压力下，同时晶片从负载锁定模块传输到接合模块中。

    METHOD FOR PRODUCING COMPOSITE STRUCTURE WITH METAL/METAL BONDING
    25.
    发明申请
    METHOD FOR PRODUCING COMPOSITE STRUCTURE WITH METAL/METAL BONDING 有权
    用金属/金属结合生产复合结构的方法

    公开(公告)号：US20150179603A1

    公开(公告)日：2015-06-25

    申请号：US14411741

    申请日：2013-06-05

    Applicant: Soitec

    Inventor： Ionut Radu ,  Marcel Broekaart ,  Arnaud Castex ,  Gweltaz Gaudin ,  Gregory Riou

    IPC: H01L23/00 ,  H01L21/66 ,  H01L21/306

    CPC classification number: H01L24/83 ,  H01L21/187 ,  H01L21/30604 ,  H01L21/30625 ,  H01L22/12 ,  H01L23/562 ,  H01L24/32 ,  H01L2224/29124 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29176 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83895 ,  H01L2924/01014 ,  H01L2924/0504 ,  H01L2924/10253 ,  H01L2924/201 ,  Y10T428/12493 ,  Y10T428/12639 ,  Y10T428/12646 ,  Y10T428/12653 ,  Y10T428/12674

    Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in μm) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

    Abstract translation: 一种制造复合结构的方法，包括至少一个第一晶片与第二晶片的直接结合，并且包括启动键合波的传播的步骤，其中在所述第一和第二晶片传播之后的所述第一和第二晶片之间的结合界面 波具有小于或等于0.7J / m 2的结合能。 启动粘合波传播的步骤是在以下一个或多个条件下进行的：将晶片放置在小于20毫巴的压力的环境中和/或施加到两个晶片之一的机械压力 在0.1MPa和33.3MPa之间。 该方法还包括在开始粘合波的传播的步骤之后，确定在两个晶片的接合期间引起的应力水平的步骤，根据使用第二晶片计算出的应力参数Ct来确定应力水平 公式Ct = Rc / Ep，其中：Rc对应于两晶片组件的曲率半径（km），Ep对应于两晶片组件的厚度（μm）。 该方法还包括当确定的应力Ct大于或等于0.07时验证接合的步骤。

    Method of mechanical separation for a double layer transfer
    27.
    发明授权
    Method of mechanical separation for a double layer transfer 有权

    公开(公告)号：US11742233B2

    公开(公告)日：2023-08-29

    申请号：US17135340

    申请日：2020-12-28

    Applicant: Soitec

    Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

    IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

    CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2221/68381

    Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

    METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER MADE OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE MADE OF SIC
    29.
    发明公开
    METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER MADE OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE MADE OF SIC 审中-公开

    公开(公告)号：US20230160102A1

    公开(公告)日：2023-05-25

    申请号：US17907509

    申请日：2021-01-12

    Applicant: Soitec

    Inventor： Hugo Biard ,  Ionut Radu ,  Didier Landru

    IPC: C30B25/20 ,  H01L21/02 ,  C30B25/18 ,  C30B31/22 ,  C23C16/01 ,  C23C16/32 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

    CPC classification number: C30B25/20 ,  C23C14/48 ,  C23C14/588 ,  C23C16/01 ,  C23C16/56 ,  C23C16/325 ,  C30B25/183 ,  C30B31/22 ,  H01L21/02002

    Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline SiC, the donor substrate comprising a donor layer produced by epitaxial growth on an initial substrate, the donor layer exhibiting a density of crystal defects that is lower than that of the initial substrate; b) a step of ion implantation of light species into the donor layer, in order to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free face of the donor layer; c) a succession of n steps of formation of carrier layers, with n greater than or equal to 2, the n carrier layers being arranged on the donor layer successively on one another and forming the carrier substrate, each step of formation comprising a chemical vapor deposition, at a temperature of between 400° C. and 1100° C., in order to form a carrier layer made of polycrystalline SiC, the n chemical vapor depositions being carried out at n different temperatures; d) a step of separation along the buried brittle plane, in order to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the remainder of the donor substrate; and e) a step of mechanical and/or chemical treatment(s) of the composite structure.

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