公开(公告)号：US09368939B2

公开(公告)日：2016-06-14

申请号：US14559149

申请日：2014-12-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/00 ,  H01S5/022 ,  H01S5/20 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US20150229107A1

公开(公告)日：2015-08-13

申请号：US14312427

申请日：2014-06-23

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

IPC: H01S5/40 ,  H01S5/30 ,  H01S5/02

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32325 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US10903625B2

公开(公告)日：2021-01-26

申请号：US16586100

申请日：2019-09-27

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US10854776B1

公开(公告)日：2020-12-01

申请号：US16796154

申请日：2020-02-20

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L33/00 ,  H01L29/205 ,  H01L33/06 ,  H01L29/66 ,  H01L23/00 ,  H01L33/32 ,  H01S5/02 ,  H01L21/311 ,  H01L21/683 ,  H01L27/06 ,  H01L27/12 ,  H01L21/02 ,  H01L29/20 ,  H01L27/088 ,  H01L27/15 ,  H01S5/227 ,  H01S5/343

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US10693279B1

公开(公告)日：2020-06-23

申请号：US16556081

申请日：2019-08-29

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L29/20 ,  H01S5/02 ,  H01S5/00 ,  H01S5/022 ,  H01L33/16 ,  H01L23/00 ,  H01L33/50 ,  H01S5/343 ,  H01S5/32 ,  H01S5/028 ,  H01S5/042 ,  H01S5/22

Abstract: In an example, the present invention provides a gallium and nitrogen containing structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates having one or more epitaxially grown layers. The structure has a first handle substrate coupled to each of the substrates. The orientation of a reference crystal direction for each of the substrates are parallel to within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrates.

公开(公告)号：US10658810B2

公开(公告)日：2020-05-19

申请号：US16199974

申请日：2018-11-26

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US10431958B1

公开(公告)日：2019-10-01

申请号：US16032997

申请日：2018-07-11

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01L33/16 ,  H01S5/022 ,  H01S5/028 ,  H01S5/32 ,  H01L29/20 ,  H01S5/042 ,  H01S5/343 ,  H01S5/02 ,  H01L23/00 ,  H01L33/50

Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between the reference crystal orientation and the selected direction of the first handle substrate. A processed region is formed overlying each of the substrates.

公开(公告)号：US20190109432A1

公开(公告)日：2019-04-11

申请号：US16199974

申请日：2018-11-26

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/022

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US09882353B2

公开(公告)日：2018-01-30

申请号：US15356302

申请日：2016-11-18

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Benyamin Buller

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

公开(公告)号：US09755398B2

公开(公告)日：2017-09-05

申请号：US15173441

申请日：2016-06-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01L21/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.