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公开(公告)号:US08486257B2
公开(公告)日:2013-07-16
申请号:US13136970
申请日:2011-08-16
申请人: Yi Cui , Fabio La Mantia , Mauro Pasta
发明人: Yi Cui , Fabio La Mantia , Mauro Pasta
IPC分类号: G01N27/327
CPC分类号: G01N27/3274
摘要: An oxidative peak in a cathodic scan is observed in the cyclic voltammetry of glucose at gold electrodes, its peak current density being proportional to glucose concentration in a wide potential range. The application of this phenomenon in blood glucose sensing has been hindered by the presence of inhibitors: the most problematic are chlorides due to their high concentration and difficult separation from glucose. The present invention provides a solution to this problem involving a three electrode, four step pulsed electrochemical detection technique.
摘要翻译: 在金电极上葡萄糖的循环伏安法中观察到阴极扫描中的氧化峰,其峰值电流密度与宽电势范围内的葡萄糖浓度成比例。 这种现象在血糖检测中的应用受到抑制剂的阻碍:阻碍药物的最大问题是由于其高浓度和难以与葡萄糖分离的氯化物。 本发明提供了涉及三电极四步脉冲电化学检测技术的该问题的解决方案。
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公开(公告)号:US08399339B2
公开(公告)日:2013-03-19
申请号:US13083817
申请日:2011-04-11
申请人: Charles M. Lieber , Hongkun Park , Qingqiao Wei , Yi Cui , Wenjie Liang
发明人: Charles M. Lieber , Hongkun Park , Qingqiao Wei , Yi Cui , Wenjie Liang
IPC分类号: H01L21/203 , H01L21/66
CPC分类号: H01L29/0665 , B82Y10/00 , B82Y15/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G01N2610/00 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/81 , H01L23/53276 , H01L29/0669 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1606 , H01L29/207 , H01L29/267 , H01L51/0048 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y10S977/762 , Y10S977/957 , H01L2924/00
摘要: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.
摘要翻译: 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。描述了纳米检测器器件。
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公开(公告)号:US08394550B2
公开(公告)日:2013-03-12
申请号:US12807777
申请日:2010-09-14
申请人: Cheng-Chieh Chao , Yi Cui , Ching-Mei Hsu , Young Beom Kim , Friedrich B. Prinz
发明人: Cheng-Chieh Chao , Yi Cui , Ching-Mei Hsu , Young Beom Kim , Friedrich B. Prinz
IPC分类号: H01M8/10
CPC分类号: H01M8/1213 , H01M4/881 , H01M4/8867 , H01M4/8871 , H01M4/9058 , H01M8/1253 , H01M8/126 , Y02E60/525 , Y02P70/56
摘要: A nano-patterned membrane electrode assembly (MEA) is provided, which includes an electrolyte membrane layer having a three-dimensional close-packed array of hexagonal-pyramids, a first porous electrode layer, disposed on a top surface of the electrolyte membrane layer that conforms to a top surface-shape of the three-dimensional close-packed array of hexagonal-pyramids, and a second porous electrode layer disposed on a bottom surface of said electrolyte membrane layer that conforms to a bottom surface-shape of the three-dimensional close-packed array of hexagonal-pyramids, where a freestanding nano-patterned MEA is provided.
摘要翻译: 提供了一种纳米图案膜电极组件(MEA),其包括具有三维密集排列的六角锥体的电解质膜层,设置在电解质膜层的顶表面上的第一多孔电极层, 符合六角锥体的立体紧密堆积阵列的顶表面形状,以及设置在所述电解质膜层的底表面上的第二多孔电极层,其符合三维 紧密堆叠的六角形金字塔阵列,其中提供独立的纳米图案MEA。
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公开(公告)号:US20110236769A1
公开(公告)日:2011-09-29
申请号:US13070158
申请日:2011-03-23
申请人: Xing Xie , Liangbing Hu , Yi Cui , Craig S. Criddle
发明人: Xing Xie , Liangbing Hu , Yi Cui , Craig S. Criddle
IPC分类号: H01M8/16
CPC分类号: H01M8/16 , B82Y30/00 , H01M4/8605 , H01M4/90 , H01M4/92 , H01M8/023 , H01M8/0236 , H01M8/0245 , Y02E60/527
摘要: An electrode for use in a microbial fuel cell comprising a porous substrate and nanostructure coating, for example, a carbon nanotube coating, is provided. The electrode can be configured as either a cathode or an anode, or both. Also provided is a microbial fuel cell comprising an anode compartment comprising an anode and a cathode compartment comprising a cathode and a metallic catalyst, wherein at least one of the anode and cathode comprises the porous substrate conformally coated with the nanostructure coating, and the cathode and anode are electrically connected. Methods for generating an electrical current with marine sediment or wastewater with the microbial fuel cell are also described.
摘要翻译: 提供了一种用于微生物燃料电池的电极,其包括多孔基底和纳米结构涂层,例如碳纳米管涂层。 电极可以被配置为阴极或阳极,或两者。 还提供了一种微生物燃料电池,其包括阳极室,阳极室包括阳极和包括阴极和金属催化剂的阴极室,其中阳极和阴极中的至少一个包括由纳米结构涂层共形涂覆的多孔基材,阴极和 阳极电连接。 还描述了用微生物燃料电池产生具有海洋沉积物或废水的电流的方法。
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公开(公告)号:US20110200873A1
公开(公告)日:2011-08-18
申请号:US12916053
申请日:2010-10-29
申请人: Liangbing Hu , Jang Wook Choi , Yuan Yang , Yi Cui
发明人: Liangbing Hu , Jang Wook Choi , Yuan Yang , Yi Cui
CPC分类号: B32B15/16
摘要: As consistent with various embodiments, an electronic device includes a fibrous material having a conductive coating thereon. The conductive coating includes conductive nanoparticles coupled to fibers in the fibrous material. The structure is implemented in connection with a variety of devices, such as a capacitive device or a battery. Other embodiments are directed to forming conductive fibrous sheets, in dispersing a nanomaterial in a solution and applying the solution to a fibrous sheet, such as commercial paper, to form a conductive sheet.
摘要翻译: 与各种实施例一致,电子设备包括其上具有导电涂层的纤维材料。 导电涂层包括与纤维材料中的纤维偶联的导电纳米颗粒。 该结构与诸如电容性装置或电池的各种装置相结合实现。 其它实施方案涉及形成导电纤维片,将纳米材料分散在溶液中,并将溶液施加到纤维片如商业纸上以形成导电片。
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公开(公告)号:US20110111296A1
公开(公告)日:2011-05-12
申请号:US12944596
申请日:2010-11-11
申请人: Eugene M. Berdichevsky , Song Han , Yi Cui , Rainer J. Fasching , Ghyrn E. Loveness , William S. DelHagen , Mark C. Platshon
发明人: Eugene M. Berdichevsky , Song Han , Yi Cui , Rainer J. Fasching , Ghyrn E. Loveness , William S. DelHagen , Mark C. Platshon
CPC分类号: H01M4/134 , H01M4/0428 , H01M4/1395 , H01M4/38 , H01M4/661 , H01M4/669 , H01M4/74 , H01M4/742 , H01M4/808
摘要: Provided are conductive substrates having open structures and fractional void volumes of at least about 25% or, more specifically, or at least about 50% for use in lithium ion batteries. Nanostructured active materials are deposited over such substrates to form battery electrodes. The fractional void volume may help to accommodate swelling of some active materials during cycling. In certain embodiments, overall outer dimensions of the electrode remain substantially the same during cycling, while internal open spaces of the conductive substrate provide space for any volumetric changes in the nanostructured active materials. In specific embodiments, a nanoscale layer of silicon is deposited over a metallic mesh to form a negative electrode. In another embodiment, a conductive substrate is a perforated sheet with multiple openings, such that a nanostructured active material is deposited into the openings but not on the external surfaces of the sheet.
摘要翻译: 提供了具有至少约25%,或更具体地至少约50%的具有开放结构和分数空隙体积的导电基底,用于锂离子电池。 纳米结构的活性材料沉积在这样的衬底上以形成电池电极。 在循环过程中,分数空隙体积有助于适应一些活性物质的溶胀。 在某些实施例中,电极的整个外部尺寸在循环过程中保持基本相同,而导电衬底的内部开放空间为纳米结构化活性材料中的任何体积变化提供了空间。 在具体实施方案中,将纳米级的硅层沉积在金属网上以形成负电极。 在另一个实施例中,导电衬底是具有多个开口的穿孔片,使得纳米结构的活性材料沉积到开口中而不是在片的外表面上。
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公开(公告)号:US20100285358A1
公开(公告)日:2010-11-11
申请号:US12437529
申请日:2009-05-07
申请人: Yi Cui , Song Han , Mark C. Platshon
发明人: Yi Cui , Song Han , Mark C. Platshon
CPC分类号: H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/66 , H01M4/661 , H01M4/663 , H01M4/75 , H01M10/0525 , H01M2004/022 , Y10T29/49108
摘要: A lithium ion battery electrode includes silicon nanowires used for insertion of lithium ions and including a conductivity enhancement, the nanowires growth-rooted to the conductive substrate.
摘要翻译: 锂离子电池电极包括用于插入锂离子的硅纳米线,并且包括导电性增强,生长在导电基底上的纳米线。
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公开(公告)号:US20100093158A1
公开(公告)日:2010-04-15
申请号:US11543353
申请日:2006-10-04
申请人: Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人: Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号: H01L21/208 , H01L21/368
CPC分类号: H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.
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公开(公告)号:US07619290B2
公开(公告)日:2009-11-17
申请号:US12038794
申请日:2008-02-27
申请人: Charles M. Lieber , Hongkun Park , Qingqiao Wei , Yi Cui , Wenjie Liang
发明人: Charles M. Lieber , Hongkun Park , Qingqiao Wei , Yi Cui , Wenjie Liang
CPC分类号: H01L29/0665 , B82Y10/00 , B82Y15/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G01N2610/00 , G11C13/0014 , G11C13/0019 , G11C13/04 , G11C2213/17 , G11C2213/81 , H01L23/53276 , H01L29/0669 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1606 , H01L29/207 , H01L29/267 , H01L51/0048 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , Y10S977/762 , Y10S977/957 , H01L2924/00
摘要: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
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公开(公告)号:US07405420B1
公开(公告)日:2008-07-29
申请号:US11541464
申请日:2006-09-29
申请人: H. S. Philip Wong , Stefan Meister , SangBum Kim , Hailin Peng , Yuan Zhang , Yi Cui
发明人: H. S. Philip Wong , Stefan Meister , SangBum Kim , Hailin Peng , Yuan Zhang , Yi Cui
IPC分类号: H01L47/00
CPC分类号: H01L27/24 , G11C13/0004 , Y10S977/94 , Y10S977/943
摘要: Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locations on a substrate. Chalcogenide-based nanowires are created at the locations on the substrate using a vapor-liquid-solid technique. Insulating material is deposited between the chalcogenide-based nanowires. Lines are created to connect at least some of the chalcogenide-based nanowires.
摘要翻译: 基于硫族化物的纳米线存储器使用各种方法和装置来实现。 根据本发明的示例性实施例,实现了一种制造存储器电路的方法。 该方法包括在衬底上的位置沉积纳米颗粒。 使用气 - 液 - 固体技术在基板上的位置产生基于硫族化物的纳米线。 绝缘材料沉积在基于硫族化物的纳米线之间。 创建线以连接至少一些基于硫族化物的纳米线。
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