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公开(公告)号：US07045466B2
公开(公告)日：2006-05-16
申请号：US10607838
申请日：2003-06-27
IPC分类号： H01L21/302
CPC分类号： B81C1/00626 , B81B2201/033 , H01L21/3086
摘要： Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
摘要翻译： 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。
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公开(公告)号：US06767614B1
公开(公告)日：2004-07-27
申请号：US10021311
申请日：2001-12-19
IPC分类号： B32B300
CPC分类号： B81C1/0015 , B81B2201/033 , B81B2203/0136 , B81C2201/0112 , B81C2201/0132 , B81C2201/0198 , Y10T428/13 , Y10T428/24273 , Y10T428/24562 , Y10T428/24744 , Y10T428/24802
摘要： Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.
摘要翻译： 公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。 在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。 使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除 需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。
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公开(公告)号：US06309077B1
公开(公告)日：2001-10-30
申请号：US09669972
申请日：2000-09-25
IPC分类号： G02B7182
CPC分类号： G01P15/0802 , G01P15/0894 , H01H1/0036 , H01H2003/463 , Y10S977/70 , Y10S977/724
摘要： A micromechanical micromotion amplifier has an integrated structure formed primarily of silicon and comprises a plurality of long slender flexible beams which are released from a silicon substrate for movement with respect to fixed points of reference upon the substrate. By arranging these beams in cooperating perpendicular pairs as micromotion amplifier stages, an input axial force/movement applied to a moveable free end of a first beam generates a transverse motion or buckling movement which in turn, translates or induces buckling movement in the connected second beam. The resultant output buckling of the second beam is an order of magnitude greater than the initial movement applied as an input to the first beam. Thus, beam pairs can be arranged as micromotion amplifier stages to amplify minute amounts of movement. Beam pairs or stages can also be cascaded to form integrated devices capable of producing greatly increased measurable effects in response to minute amounts of input. Such devices are useful as highly sensitive integrated micro-sensors for measuring a wide variety of parameters such as temperature, pressure, humidity, impact or acceleration. Such devices may also form the basis of highly sensitive micro-switches.
摘要翻译： 微机电微动力放大器具有主要由硅形成的整体结构，并且包括从硅衬底释放的多个长细长的柔性梁，用于相对于衬底上的固定参考点移动。 通过将这些光束配置为协作的垂直对作为微动力放大器级，施加到第一光束的可移动自由端的输入轴向力/运动产生横向运动或屈曲运动，其进而平移或引起所连接的第二光束中的屈曲运动 。 第二光束的合成输出屈曲比作为第一光束的输入的初始移动大一个数量级。 因此，波束对可以被布置为微运动放大器级以放大微小的运动量。 光束对或阶段也可以级联以形成能够响应于微小量的输入而产生大大增加的可测量效果的集成器件。 这样的器件可用作用于测量各种参数（如温度，压力，湿度，冲击或加速度）的高灵敏度集成微传感器。 这样的设备也可以形成高灵敏度的微型开关的基础。
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公开(公告)号：US06239473B1
公开(公告)日：2001-05-29
申请号：US09231082
申请日：1999-01-14
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2984
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.
摘要翻译： 提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。 在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。 在结构定义之前，通过金属图案化步骤并入多个导电路径。 本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。 通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。
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公开(公告)号：US06170332B2
公开(公告)日：2001-01-09
申请号：US09552578
申请日：2000-04-19
申请人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
发明人： Noel C. MacDonald , Kevin A. Shaw , Scott G. Adams
IPC分类号： G01P1508
CPC分类号： G01P15/131 , B81B2201/0235 , B81B2203/051 , B81C1/00619 , B81C2201/0132 , G01P1/006 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译： 从单个硅晶片提供微机电电容式加速度计。 在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。 在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。 加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。 微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。
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公开(公告)号：US6000280A
公开(公告)日：1999-12-14
申请号：US45573
申请日：1998-03-23
IPC分类号： G01B5/28 , G01P15/125 , G01P15/13 , G01Q70/02
CPC分类号： G01P15/131 , G01B5/28 , G01P15/125 , B82Y35/00 , G01P2015/0831 , Y10S977/872
摘要： A comb-type actuator for movable microelectromechanical structures includes first and second asymmetric sets of interdigitated fingers. Asymmetry is obtained by fabricating on set of fingers to have a greater height than the other set, or by providing electrically insulating segments in one set. Application of a voltage across the sets produces an asymmetric field between them and produces relative motion.
摘要翻译： 用于可移动微机电结构的梳状致动器包括第一和第二不对称的指状指状物组。 通过在一组手指上制造具有比另一组更大的高度，或者通过在一组中提供电绝缘片而获得不对称性。 在两组之间施加电压会在它们之间产生不对称的场并产生相对运动。
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公开(公告)号：US5627427A
公开(公告)日：1997-05-06
申请号：US464532
申请日：1995-06-05
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30426
摘要： A micrometer scale emitter tip or array is disclosed having precisely located tips and surrounding gates. A silicide on the tips reduces tip work function.
摘要翻译： 公开了一种千分尺发射器尖端或阵列，其具有精确定位的尖端和周围的栅极。 尖端上的硅化物减少了尖端功能。
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公开(公告)号：US5615143A
公开(公告)日：1997-03-25
申请号：US308803
申请日：1994-09-19
申请人： Noel C. MacDonald , Yu-hwa Lo
发明人： Noel C. MacDonald , Yu-hwa Lo
CPC分类号： B82Y10/00 , G11B11/007 , G11B11/08 , G11B9/04 , G11B9/14 , G11B9/1409
摘要： An ultra-high density optical storage system includes an array of nanometer-scale emitter tips which are associated with corresponding storage surfaces. The tips are optically selectively activated to produce data features simultaneously on their corresponding storage surfaces, with the resulting data features having diameters approximately the same as the diameters of the emitter tips. The array is scannable to selected locations, whereby a data set can be stored in parallel at each location. Because of the small size of the data features, the locations of adjacent features can be spaced apart by a distance on the order of 10 nm for ultradense storage.Stored data can be selectively read out optically by positioning the emitter tip array at the location of the data set to be read and directing light onto the storage surfaces for each tip. Light reflected from the surfaces will correspond to the presence or absence of a data feature at each tip for parallel readout. Alternatively, each storage surface may be a part of a corresponding light emitter activated by the presence or absence of a feature.
摘要翻译： 超高密度光学存储系统包括与对应的存储表面相关联的纳米级发射器尖端的阵列。 光学选择性地激活尖端以在其相应的存储表面上同时产生数据特征，所得到的数据特征具有与发射极尖端的直径大致相同的直径。 阵列可扫描到选定的位置，从而可以在每个位置并行存储数据集。 由于数据特征的小尺寸，相邻特征的位置可以间隔10纳米的距离用于超声存储。 通过将发射器尖端阵列定位在要读取的数据集的位置并将光引导到每个尖端的存储表面上，可以有选择地读出存储的数据。 从表面反射的光将对应于每个尖端处的数据特征的存在或不存在用于并行读出。 或者，每个存储表面可以是由特征的存在或不存在激活的对应的光发射器的一部分。
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公开(公告)号：US5399415A
公开(公告)日：1995-03-21
申请号：US71260
申请日：1993-06-04
申请人： Liang-Yu Chen , Noel C. MacDonald
发明人： Liang-Yu Chen , Noel C. MacDonald
CPC分类号： B81C1/00214 , B81B3/0086 , G01P15/0802 , H02N1/006 , H02N1/008 , B81B2201/13 , B81B2203/0118 , B81B2203/0315 , G01P2015/0814 , Y10T428/24917 , Y10T428/24926
摘要： A process for fabricating mechanically interconnected, released, electrically isolated metal microstructures, and circuit components and actuators produced by the process. A dielectric stack on a substrate is patterned and etched to produce trenches in which a metal such as tungsten is deposited. The dielectric is removed from selected regions of the metal to expose metal beams, and to form mechanically interconnecting, electrically insulating hinges supporting the beams. The beams and hinges are then released for relative motion. Electrical potentials may be established between adjacent beams to produce controlled motion.
摘要翻译： 用于制造机械互连，释放，电隔离的金属微结构的工艺，以及由该工艺制造的电路部件和致动器。 图案化并蚀刻衬底上的电介质堆叠以产生其中沉积诸如钨的金属的沟槽。 电介质从金属的选定区域去除以暴露金属梁，并形成支撑梁的机械互连的电绝缘铰链。 然后释放梁和铰链以进行相对运动。 可以在相邻光束之间建立电势以产生受控的运动。
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30.发明授权
公开(公告)号：US5149673A
公开(公告)日：1992-09-22
申请号：US762492
申请日：1991-09-19
IPC分类号： H01H1/00 , H01L21/285 , H02N1/00
CPC分类号： H02N1/008 , B82Y15/00 , H01H1/0094
摘要： A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.
摘要翻译： 使用选择性化学气相沉积（CVD）钨工艺在衬底上制造三维钨悬臂梁。 两个光束形成微机械镊子，其通过施加光束之间以及光束和硅衬底之间的电位差在三维中移动。 使用高沉积速率选择性钨CVD工艺来制造离子注入硅的图案化CVD二氧化硅沟槽中大于3微米厚度的光束。 长度为200微米，截面为2.7×2.5微米的镊子将在施加小于150伏的电压时闭合。
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