公开(公告)号：US10276404B2

公开(公告)日：2019-04-30

申请号：US15690300

申请日：2017-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chiang Wu ,  Chung-Hao Tsai ,  Chun-Lin Lu ,  Yen-Ping Wang ,  Che-Wei Hsu

IPC: H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L21/768

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and a second redistribution structure. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The second redistribution structure is disposed on the die and the insulation encapsulation. At least one of the first redistribution structure and the second redistribution structure includes a dielectric layer, a feed line, and a signal enhancement layer. The feed line is at least partially disposed on the dielectric layer. The signal enhancement layer covers the feed line. The signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer.

公开(公告)号：US11264316B2

公开(公告)日：2022-03-01

申请号：US16513730

申请日：2019-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chuei-Tang Wang ,  Chun-Lin Lu ,  Kai-Chiang Wu

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/66 ,  H01L21/56 ,  H01L21/683 ,  H01L21/48 ,  H01L23/31 ,  H01Q1/22 ,  H01Q9/16 ,  H01Q9/04

Abstract: A package structure includes a first RDL structure, a die, an encapsulant, a film, a TIV and a second RDL structure. The die is located over the first RDL structure. The encapsulant laterally encapsulates sidewalls of the die. The film is disposed between the die and the first RDL structure, and between the encapsulant and the first RDL structure. The TIV penetrates through the encapsulant and the film to connect to the first RDL structure. The second RDL structure is disposed on the die, the TIV and the encapsulant and electrically connected to die and the TIV.

公开(公告)号：US10825773B2

公开(公告)日：2020-11-03

申请号：US16292348

申请日：2019-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chun-Lin Lu ,  Han-Ping Pu ,  Kai-Chiang Wu

IPC: H01L23/12 ,  H01L21/00 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L25/18 ,  H01L21/56

Abstract: A package structure includes an insulating encapsulation, at least one semiconductor die, a redistribution circuit structure, and first reinforcement structures. The at least one semiconductor die is encapsulated in the insulating encapsulation. The redistribution circuit structure is located on the insulating encapsulation and electrically connected to the at least one semiconductor die. The first reinforcement structures are embedded in the redistribution circuit structure. A shape of the package structure includes a polygonal shape on a vertical projection along a stacking direction of the insulating encapsulation and the redistribution circuit structure, and the first reinforcement structures are located on and extended along diagonal lines of the package structure.

公开(公告)号：US20190157206A1

公开(公告)日：2019-05-23

申请号：US15965980

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chuei-Tang Wang ,  Chung-Hao Tsai ,  Chen-Hua Yu ,  Chun-Lin Lu ,  Chao-Wen Shih ,  Han-Ping Pu ,  Kai-Chiang Wu ,  Albert Wan

IPC: H01L23/538 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065 ,  H01L23/28

CPC classification number: H01L23/5384 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/66 ,  H01L24/18 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/18

Abstract: A package structure includes a first redistribution layer, a second redistribution layer, at least one semiconductor chip, an insulating encapsulation, a protection layer, and at least one connecting module. The at least one semiconductor chip is located between and electrically connected to the first redistribution layer and the second redistribution layer. The insulating encapsulation encapsulates the at least one semiconductor chip. The protection layer is disposed on and partially covers the first redistribution layer, wherein the first redistribution layer is located between the at least one semiconductor chip and the protection layer. The at least one connecting module connects to the first redistribution layer and is electrically connected to the at least one semiconductor chip through the first redistribution layer, wherein the at least one connecting module comprises a plurality of pins, and the at least one connecting module is mounted onto the first redistribution layer by the protection layer and is accessibly exposed by the protection layer.

公开(公告)号：US20170162541A1

公开(公告)日：2017-06-08

申请号：US15437193

申请日：2017-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Feng Chen ,  Kai-Chiang Wu ,  Chun-Lin Lu ,  Hung-Jui Ko

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/544

CPC classification number: H01L21/3205 ,  H01L21/283 ,  H01L21/3213 ,  H01L21/34 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/10 ,  H01L23/147 ,  H01L23/16 ,  H01L23/28 ,  H01L23/31 ,  H01L23/3157 ,  H01L23/4334 ,  H01L23/481 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2021/6024 ,  H01L2223/5446 ,  H01L2224/02235 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/11318 ,  H01L2224/13026 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81139 ,  H01L2224/92124 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a substrate, and a plurality of contact pads disposed over the substrate. The contact pads may be arranged in a ball grid array (BGA), and the may include a plurality of corners. A metal dam is disposed around each of the plurality of corners, such as corners of the BGA.

公开(公告)号：US11239096B2

公开(公告)日：2022-02-01

申请号：US16991010

申请日：2020-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chiang Wu ,  Chung-Hao Tsai ,  Chun-Lin Lu ,  Yen-Ping Wang ,  Che-Wei Hsu

IPC: H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

公开(公告)号：US20210184335A1

公开(公告)日：2021-06-17

申请号：US16997958

申请日：2020-08-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Ping Wang ,  Chun-Lin Lu ,  Han-Ping Pu ,  Kai-Chiang Wu ,  Chung-Yi Hsu

IPC: H01Q1/22 ,  H01L23/66 ,  H01L23/31 ,  H01Q9/04

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes: patch antennas, encapsulated by a first encapsulant; a device die, vertically spaced apart from the patch antennas, and electrically coupled to the patch antennas; and at least one redistribution structure, disposed between the patch antennas and the device die, and including electromagnetic bandgap (EBG) structures laterally surrounding each of the patch antennas.

公开(公告)号：US11004810B2

公开(公告)日：2021-05-11

申请号：US16714768

申请日：2019-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chiang Wu ,  Chun-Lin Lu ,  Chao-Wen Shih ,  Han-Ping Pu ,  Nan-Chin Chuang

IPC: H01L23/66 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01Q21/06 ,  H01Q1/22 ,  H01L23/31 ,  H01L21/683 ,  H01Q21/28 ,  H01Q1/40

Abstract: A semiconductor package structure including an encapsulation body, an RFIC chip, a first antenna structure, and a second antenna structure is provided. The RFIC chip may be embedded in the encapsulation body. The first antenna structure may be disposed at a lateral side of the RFIC chip, electrically connected to the RFIC chip, and include a first conductor layer and a plurality of first patches opposite to the first conductor layer. The second antenna structure may be stacked on the RFIC chip, electrically connected to the RFIC chip, and include a second conductor layer and a plurality of second patches opposite to the second conductor layer. The first patches and the second patches are located at a surface of the encapsulation body. A first distance between the first conductor layer and the first patches is different from a second distance between the second conductor layer and the second patches.

公开(公告)号：US20210020560A1

公开(公告)日：2021-01-21

申请号：US16513730

申请日：2019-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chuei-Tang Wang ,  Chun-Lin Lu ,  Kai-Chiang Wu

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L23/66 ,  H01L21/56 ,  H01L21/683 ,  H01L21/48 ,  H01Q1/22 ,  H01Q9/16 ,  H01Q9/04

Abstract: A package structure includes a first RDL structure, a die, an encapsulant, a film, a TIV and a second RDL structure. The die is located over the first RDL structure. The encapsulant laterally encapsulates sidewalls of the die. The film is disposed between the die and the first RDL structure, and between the encapsulant and the first RDL structure. The TIV penetrates through the encapsulant and the film to connect to the first RDL structure. The second RDL structure is disposed on the die, the TIV and the encapsulant and electrically connected to die and the TIV.

公开(公告)号：US10770313B2

公开(公告)日：2020-09-08

申请号：US16389993

申请日：2019-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Chiang Wu ,  Chung-Hao Tsai ,  Chun-Lin Lu ,  Yen-Ping Wang ,  Che-Wei Hsu

IPC: H01L21/56 ,  H01L21/768 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L23/498

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and a second redistribution structure. The first redistribution structure has a dielectric layer and a feed line disposed on the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The insulation encapsulation has a protrusion laterally wraps around the feed line. The insulation encapsulation has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The second redistribution structure is disposed on the die and the insulation encapsulation.