公开(公告)号：US10559546B2

公开(公告)日：2020-02-11

申请号：US16233218

申请日：2018-12-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chung-Shi Liu ,  Ming-Da Cheng ,  Mirng-Ji Lii ,  Meng-Tse Chen ,  Wei-Hung Lin

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  B23K35/00 ,  B23K35/02 ,  B23K35/22 ,  B23K35/26 ,  B23K35/36 ,  H01L25/10 ,  H01L21/56 ,  H01L25/00 ,  H01L25/03

Abstract: Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.

公开(公告)号：US20190221544A1

公开(公告)日：2019-07-18

申请号：US16360411

申请日：2019-03-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tse Chen ,  Yu-Chih Liu ,  Hui-Min Huang ,  Wei-Hung Lin ,  Jing Ruei Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L25/065 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L21/561 ,  H01L21/563 ,  H01L23/00 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/562 ,  H01L24/17 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/15311

Abstract: The present disclosure, in some embodiments, relates to a method of forming a package. The method includes coupling a first package component to a second package component using a first set of conductive elements. A first polymer-comprising material is formed over the second package component and surrounding the first set of conductive elements. The first polymer-comprising material is cured to solidify the first polymer-comprising material. A part of the first polymer-comprising material is removed to expose an upper surface of the second package component. The second package component is coupled to a third package component using a second set of conductive elements that are formed onto the upper surface of the second package component.

公开(公告)号：US10283377B1

公开(公告)日：2019-05-07

申请号：US15832742

申请日：2017-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tse Chen ,  Ching-Hua Hsieh ,  Chung-Shi Liu ,  Chih-Wei Lin ,  Sheng-Hsiang Chiu ,  Yao-Tong Lai

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/00

Abstract: An integrated fan-out (InFO) package includes at least one die, a plurality of conductive structures, an encapsulant, an enhancement layer, and a redistribution structure. The die has an active surface and includes a plurality of conductive posts on the active surface. The conductive structures surround the die. The encapsulant partially encapsulates the die. The enhancement layer is over the encapsulant. A top surface of the enhancement layer is substantially coplanar with top surfaces of the conductive posts and the conductive structures. A material of the enhancement layer is different from a material of the encapsulant. A roughness of an interface between the encapsulant and the enhancement layer is larger than a roughness of the top surface of the enhancement layer. The redistribution structure is over the enhancement layer and is electrically connected to the conductive structures and the die.

公开(公告)号：US12009345B2

公开(公告)日：2024-06-11

申请号：US18149509

申请日：2023-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tse Chen ,  Chung-Shi Liu ,  Chih-Wei Lin ,  Hui-Min Huang ,  Hsuan-Ting Kuo ,  Ming-Da Cheng

IPC: H01L23/02 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L25/0657 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76804 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06586

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

公开(公告)号：US11955460B2

公开(公告)日：2024-04-09

申请号：US17063251

申请日：2020-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Da Tsai ,  Meng-Tse Chen ,  Sheng-Feng Weng ,  Sheng-Hsiang Chiu ,  Wei-Hung Lin ,  Ming-Da Cheng ,  Ching-Hua Hsieh ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L23/48 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L21/568 ,  H01L23/3128 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/0237 ,  H01L2224/024 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16145 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/06 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/0715 ,  H01L2924/14 ,  H01L2924/18162 ,  H01L2924/19011 ,  H01L2924/19102 ,  H01L2924/3511

Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

公开(公告)号：US20230154896A1

公开(公告)日：2023-05-18

申请号：US18149509

申请日：2023-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tse Chen ,  Chung-Shi Liu ,  Chih-Wei Lin ,  Hui-Min Huang ,  Hsuan-Ting Kuo ,  Ming-Da Cheng

IPC: H01L25/065 ,  H01L21/56 ,  H01L25/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/568 ,  H01L25/50 ,  H01L21/565 ,  H01L21/76804 ,  H01L21/7684 ,  H01L21/76883 ,  H01L25/0652 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/06524 ,  H01L2224/18 ,  H01L2224/04105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/12105

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

公开(公告)号：US20210091047A1

公开(公告)日：2021-03-25

申请号：US17113676

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tse Chen ,  Chung-Shi Liu ,  Chih-Wei Lin ,  Hui-Min Huang ,  Hsuan-Ting Kuo ,  Ming-Da Cheng

IPC: H01L25/065 ,  H01L21/56 ,  H01L25/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.

公开(公告)号：US10818614B2

公开(公告)日：2020-10-27

申请号：US16691512

申请日：2019-11-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tse Chen ,  Ching-Hua Hsieh ,  Chung-Shi Liu ,  Chih-Wei Lin ,  Hao-Cheng Hou ,  Jung-Wei Cheng

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/02

Abstract: A package structure including a semiconductor die, a warpage control layer, an insulating encapsulant and a redistribution layer is provided. The semiconductor die has an active surface and a backside surface opposite to the active surface. The warpage control layer is disposed on the backside surface of the semiconductor die, wherein the warpage control layer comprises a material having a Young's Modulus of 100 GPa or more. The insulating encapsulant is encapsulating the semiconductor die and the warpage control layer. The redistribution layer is located on the insulating encapsulant and over the active surface of the semiconductor die.

公开(公告)号：US20200335459A1

公开(公告)日：2020-10-22

申请号：US16916066

申请日：2020-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chao-Wen Shih ,  Han-Ping Pu ,  Meng-Tse Chen ,  Sheng-Hsiang Chiu

IPC: H01L23/66 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.

公开(公告)号：US10741508B2

公开(公告)日：2020-08-11

申请号：US15965995

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chao-Wen Shih ,  Han-Ping Pu ,  Meng-Tse Chen ,  Sheng-Hsiang Chiu

IPC: H01L23/66 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device including a chip package, a dielectric structure and a first antenna pattern is provided. The dielectric structure disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern. A manufacturing method of a semiconductor device is also provided.