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公开(公告)号:US20220122922A1
公开(公告)日:2022-04-21
申请号:US17150300
申请日:2021-01-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chih-Hao Chen , Pu Wang , Li-Hui Cheng , Szu-Wei Lu
IPC: H01L23/538 , H01L25/065 , H01L25/10 , H01L23/00 , H01L23/31 , H01L21/683 , H01L21/48 , H01L21/56 , H01L25/00
Abstract: Semiconductor devices and methods of manufacture are provided, in which an adhesive is removed from a semiconductor die embedded within an encapsulant, and an interface material is utilized to remove heat from the semiconductor device. The removal of the adhesive leaves behind a recess adjacent to a sidewall of the semiconductor, and the recess is filled.
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公开(公告)号:US11289399B2
公开(公告)日:2022-03-29
申请号:US16790700
申请日:2020-02-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Pu Wang , Chin-Fu Kao , Szu-Wei Lu
IPC: H01L23/373 , H01L25/065 , H01L23/367 , H01L21/50 , H01L25/16
Abstract: A package structure and a manufacturing method thereof are provided. The package structure includes a substrate, a semiconductor package, a thermal conductive gel, a thermal conductive film, and a heat spreader. The semiconductor package has an uneven top surface. The thermal conductive gel covers the uneven top surface of the semiconductor package. The thermal conductive film is over the uneven top surface of the semiconductor package. A thermal conductivity of the thermal conductive film is higher than a thermal conductivity of the thermal conductive gel. The heat spreader is disposed over the thermal conductive film.
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公开(公告)号:US20210098332A1
公开(公告)日:2021-04-01
申请号:US16790700
申请日:2020-02-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Pu Wang , Chin-Fu Kao , Szu-Wei Lu
IPC: H01L23/373 , H01L25/065 , H01L25/16 , H01L23/367 , H01L21/50
Abstract: A package structure and a manufacturing method thereof are provided. The package structure includes a substrate, a semiconductor package, a thermal conductive gel, a thermal conductive film, and a heat spreader. The semiconductor package has an uneven top surface. The thermal conductive gel covers the uneven top surface of the semiconductor package. The thermal conductive film is over the uneven top surface of the semiconductor package. A thermal conductivity of the thermal conductive film is higher than a thermal conductivity of the thermal conductive gel. The heat spreader is disposed over the thermal conductive film.
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公开(公告)号:US20240371725A1
公开(公告)日:2024-11-07
申请号:US18775879
申请日:2024-07-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chih-Hao Chen , Hung-Yu Chen , Pu Wang , Li-Hui Cheng , Szu-Wei Lu
IPC: H01L23/373 , H01L21/48 , H01L23/04 , H01L23/31 , H01L23/40
Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.
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公开(公告)号:US20240071847A1
公开(公告)日:2024-02-29
申请号:US17822470
申请日:2022-08-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Huan Liao , Ping-Yin Hsieh , Chih-Hao Chen , Pu Wang , Li-Hui Cheng , Ying-Ching Shih
IPC: H01L23/10 , H01L21/52 , H01L21/56 , H01L23/00 , H01L23/16 , H01L23/31 , H01L23/367 , H01L23/538
CPC classification number: H01L23/10 , H01L21/52 , H01L21/56 , H01L23/16 , H01L23/3121 , H01L23/367 , H01L23/5383 , H01L23/5385 , H01L23/562 , H01L24/32 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/73 , H01L24/81 , H01L24/83 , H01L2224/131 , H01L2224/16227 , H01L2224/29124 , H01L2224/29144 , H01L2224/29155 , H01L2224/29166 , H01L2224/29172 , H01L2224/2929 , H01L2224/29298 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/81424 , H01L2224/81447 , H01L2224/81455 , H01L2224/81466 , H01L2224/81484 , H01L2224/83447 , H01L2224/83455
Abstract: A semiconductor package including two different adhesives and a method of forming are provided. The semiconductor package may include a package component having a semiconductor die bonded to a substrate, a first adhesive over the substrate, a heat transfer layer on the package component, and a lid attached to the substrate by a second adhesive. The first adhesive may encircle the package component and the heat transfer layer. The lid may include a top portion on the heat transfer layer and the first adhesive, and a bottom portion attached to the substrate and encircling the first adhesive. A material of the second adhesive may be different from a material of the first adhesive.
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公开(公告)号:US11830821B2
公开(公告)日:2023-11-28
申请号:US17150300
申请日:2021-01-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chih-Hao Chen , Pu Wang , Li-Hui Cheng , Szu-Wei Lu
IPC: H01L23/538 , H01L25/10 , H01L23/00 , H01L23/31 , H01L21/683 , H01L21/48 , H01L21/56 , H01L25/00 , H01L25/065
CPC classification number: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L24/19 , H01L24/20 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68372 , H01L2224/214 , H01L2225/0651 , H01L2225/1035 , H01L2225/1058
Abstract: Semiconductor devices and methods of manufacture are provided, in which an adhesive is removed from a semiconductor die embedded within an encapsulant, and an interface material is utilized to remove heat from the semiconductor device. The removal of the adhesive leaves behind a recess adjacent to a sidewall of the semiconductor, and the recess is filled.
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公开(公告)号:US20230378017A1
公开(公告)日:2023-11-23
申请号:US17891634
申请日:2022-08-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ping-Yin Hsieh , Pu Wang , Li-Hui Cheng , Ying-Ching Shih , Hung-Yu Chen
IPC: H01L23/367 , H01L25/065 , H01L23/42 , H01L23/373 , H01L21/56 , H01L23/31
CPC classification number: H01L23/367 , H01L25/0652 , H01L23/42 , H01L23/3736 , H01L21/561 , H01L21/563 , H01L23/3157 , H01L2224/16145 , H01L24/16
Abstract: An embodiment is a device including a package component including an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a first side of the package component. The device also includes a metal layer on a second side of the package component, the second side being opposite the first side. The device also includes a thermal interface material on the metal layer. The device also includes a lid on the thermal interface material. The device also includes a retaining structure on sidewalls of the package component and the thermal interface material. The device also includes a package substrate connected to the conductive connectors, the lid being adhered to the package substrate.
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公开(公告)号:US20230317552A1
公开(公告)日:2023-10-05
申请号:US18328387
申请日:2023-06-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chih-Hao Chen , Hung-Yu Chen , Pu Wang , Li-Hui Cheng , Szu-Wei Lu
IPC: H01L23/373 , H01L21/48 , H01L23/04 , H01L23/31 , H01L23/40
CPC classification number: H01L23/3737 , H01L21/4882 , H01L23/04 , H01L23/3128 , H01L23/4006 , H01L2023/4087
Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.
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公开(公告)号:US20230092361A1
公开(公告)日:2023-03-23
申请号:US17994548
申请日:2022-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chih-Wei Wu , Ying-Ching Shih , Kung-Chen Yeh , Li-Chung Kuo , Pu Wang , Szu-Wei Lu
IPC: H01L23/00 , H01L21/56 , H01L21/3105 , H01L21/48 , H01L25/00 , H01L23/31 , H01L25/18 , H01L23/498 , H01L21/78
Abstract: A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.
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公开(公告)号:US20220359339A1
公开(公告)日:2022-11-10
申请号:US17381952
申请日:2021-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Ping-Yin Hsieh , Pu Wang , Li-Hui Cheng , Szu-Wei Lu
IPC: H01L23/367 , H01L25/10 , H01L23/498 , H01L23/373 , H01L23/00 , H01L21/48 , H01L25/00
Abstract: A method includes placing a package, which includes a first package component, a second package component, and an encapsulant encapsulating the first package component and the second package component therein. The method further includes attaching a first thermal interface material over the first package component, attaching a second thermal interface material different from the first thermal interface material over the second package component, and attaching a heat sink over both of the first thermal interface material and the second thermal interface material.
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