公开(公告)号：US09129718B2

公开(公告)日：2015-09-08

申请号：US13820072

申请日：2011-08-23

申请人： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

发明人： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

IPC分类号： G21K1/06

CPC分类号： G21K1/06 ,  G21K1/062 ,  G21K2201/061

摘要： A X-ray waveguide includes a core for guiding X-rays having a wavelength band in which the real part of refractive index of material is smaller than 1 and a cladding for confining the X-rays in the core. The core has a one-dimensional periodic structure in which a plurality of layers respectively formed of inorganic materials having different real parts of refractive index are periodically laminated. The core and the cladding are configured so that a critical angle for total reflection for the X-rays at an interface between the core and the cladding is larger than a Bragg angle due to a periodicity of the one-dimensional periodic structure. A critical angle for total reflection for the X-rays at an interface between layers in the one-dimensional periodic structure is smaller than the Bragg angle due to the periodicity of the one-dimensional periodic structure.

摘要翻译： X射线波导包括用于引导具有材料的折射率的实部的小于1的波长带的X射线的芯和用于将X射线限制在芯中的包层。 芯具有一维周期性结构，其中分别由具有不同实际折射率部分的无机材料形成的多个层周期性层压。 芯和包层被配置为使得在芯和包层之间的界面处的X射线的全反射的临界角度由于一维周期性结构的周期性而大于布拉格角。 由于一维周期性结构的周期性，在一维周期结构中的层之间的界面处的X射线的全反射的临界角小于布拉格角。

公开(公告)号：US09031189B2

公开(公告)日：2015-05-12

申请号：US13522474

申请日：2011-01-27

申请人： Taihei Mukaide ,  Takashi Noma ,  Kazunori Fukuda ,  Masatoshi Watanabe ,  Kazuhiro Takada

发明人： Taihei Mukaide ,  Takashi Noma ,  Kazunori Fukuda ,  Masatoshi Watanabe ,  Kazuhiro Takada

IPC分类号： G01N23/04 ,  G01T1/29

CPC分类号： G01T1/29 ,  G01N23/04

摘要： An X-ray imaging apparatus acquiring a differential phase contrast image of a test object without using a light-shielding mask for X-ray. The apparatus includes an X-ray source, a splitting element configured to spatially divide an X-ray emitted from an X-ray source and a scintillator configured to emit light when a divided X-ray beam divided at the splitting element is incident on the scintillator. The apparatus also includes a light-transmission limiting unit configured to limit transmitting amount of the light emitted from the scintillator and a plurality of light detectors each configured to detect the amount of light that has transmitted through the light-transmission limiting unit. The light-transmission limiting unit is configured such that a light intensity detected at each of the light detectors changes in response to a change in an incident position of the X-ray beam.

摘要翻译： 一种X射线成像装置，在不使用用于X射线的遮光掩模的情况下获取被测物体的差分相位差图像。 该装置包括X射线源，分配元件，被配置为空间上划分从X射线源发射的X射线;以及闪烁器，其被配置为当分裂元件分割的分割的X射线束入射到所述X射线源时发光 闪烁体。 该装置还包括：光限制单元，被配置为限制从闪烁体发射的光的发射量;以及多个光检测器，每个光检测器被配置为检测透射通过光传输限制单元的光量。 光传输限制单元被配置为使得在每个光检测器处检测到的光强度响应于X射线束的入射位置的变化而变化。

公开(公告)号：US08766408B2

公开(公告)日：2014-07-01

申请号：US11714906

申请日：2007-03-07

申请人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49816 ,  H01L24/10 ,  H01L24/13 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/3511 ,  H01L2924/00

摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。

公开(公告)号：US08693157B2

公开(公告)日：2014-04-08

申请号：US12915119

申请日：2010-10-29

申请人： Takashi Noma ,  Jun Urakawa

发明人： Takashi Noma ,  Jun Urakawa

IPC分类号： H02H7/20

CPC分类号： H05K1/0259 ,  H01L2224/16225 ,  H01L2924/15192 ,  H01L2924/19105 ,  H01T4/08 ,  H05K1/026 ,  H05K1/0272

摘要： A substrate including an ESD protection function includes an insulating substrate, at least one of circuit elements or a wiring pattern and an ESD protection portion. In the ESD protection portion, facing portions of at least one pair of discharge electrodes are disposed in a cavity provided in the insulating substrate so that the ends face each other. The discharge electrodes are electrically connected to the circuit elements and or the wiring pattern.

摘要翻译： 包括ESD保护功能的基板包括绝缘基板，电路元件或布线图案和ESD保护部分中的至少一个。 在ESD保护部中，至少一对放电电极的相对部分设置在设置在绝缘基板中的空腔中，使得端部彼此面对。 放电电极电连接到电路元件和/或布线图案。

公开(公告)号：US20110194674A1

公开(公告)日：2011-08-11

申请号：US13058889

申请日：2010-11-29

申请人： Taihei Mukaide ,  Kazunori Fukuda ,  Masatoshi Watanabe ,  Kazuhiro Takada ,  Takashi Noma

发明人： Taihei Mukaide ,  Kazunori Fukuda ,  Masatoshi Watanabe ,  Kazuhiro Takada ,  Takashi Noma

IPC分类号： G01N23/04 ,  G01N23/083

CPC分类号： G01N23/046 ,  A61B6/06 ,  A61B6/484 ,  G01N2223/419

摘要： An X-ray imaging apparatus and an X-ray imaging method can alleviate the influence of scattered X-rays relative to the obtained image. A differential phase contrast image or a phase contrast image of a detection object is computed by using a splitting element and an exposure control unit that synchronizes the X-ray scanning speed and the image acquisition speed of a detecting unit.

摘要翻译： X射线成像装置和X射线成像方法可以减轻散射X射线相对于所获得的图像的影响。 通过使用与检测单元的X射线扫描速度和图像获取速度同步的分割元件和曝光控制单元来计算检测对象的差分相位差图像或相位对比图像。

公开(公告)号：US07986021B2

公开(公告)日：2011-07-26

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US07847299B2

公开(公告)日：2010-12-07

申请号：US11964519

申请日：2007-12-26

申请人： Takashi Noma

发明人： Takashi Noma

IPC分类号： H01L31/00 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L31/167 ,  B81C1/0023 ,  B81C2201/019 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/167 ,  H01L31/1804 ,  H01L2224/48091 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1461 ,  H01L2924/351 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a semiconductor device with high reliability and smaller size and a method of manufacturing the same. A light emitting element as a device element is formed on the front surface of a semiconductor substrate, for example. In detail, an N-type semiconductor layer, a P-type semiconductor layer and pad electrodes are formed on the front surface of the semiconductor substrate. A device element receiving light from the light emitting element (e.g. a photodiode element), for example, and pad electrodes are formed on the front surface of another semiconductor substrate. The semiconductor substrates are attached and integrated with an adhesive layer being interposed therebetween. Wiring layers electrically connected to the pad electrodes and wiring layers electrically connected to the other pad electrodes are formed on the side surface of the semiconductor substrate.

摘要翻译： 本发明提供一种具有高可靠性和较小尺寸的半导体器件及其制造方法。 作为器件元件的发光元件例如形成在半导体衬底的前表面上。 详细地，在半导体衬底的前表面上形成N型半导体层，P型半导体层和焊盘电极。 在另一个半导体衬底的前表面上形成接收来自发光元件（例如光电二极管元件）的光的器件元件和焊盘电极。 将半导体基板与夹在其间的粘合剂层附着并整合。 与半导体衬底的侧表面上形成电连接到焊盘电极和电连接到其它焊盘电极的布线层的布线层。

公开(公告)号：US07633133B2

公开(公告)日：2009-12-15

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US07576402B2

公开(公告)日：2009-08-18

申请号：US11642958

申请日：2006-12-21

申请人： Takashi Noma

发明人： Takashi Noma

IPC分类号： H01L31/0232 ,  H01L31/0203 ,  H01L29/267

CPC分类号： H01L27/14618 ,  H01L23/3164 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L27/14687 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/06154 ,  H01L2224/10125 ,  H01L2224/1131 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/14135 ,  H01L2224/14154 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/81141 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15788 ,  H04N5/2257 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

摘要： The invention provides a package type semiconductor device and a method of manufacturing the same where reliability and yield are enhanced without making a manufacturing process complex. A resin layer and a supporting body are formed on a front surface of a semiconductor substrate formed with a pad electrode. Then, the resin layer and the supporting body are removed by etching so as to expose the pad electrode. By this etching, the supporting body in two conductive terminal formation regions facing each other over a dicing line and the supporting body in a region connecting with these regions therebetween are simultaneously removed to form an opening, as shown in FIG. 3C. Then, a metal layer is formed on the pad electrode exposed in the opening, and a conductive terminal is further formed thereon. Lastly, dicing is performed along the dicing line to separate the semiconductor substrate in individual semiconductor dies.

摘要翻译： 本发明提供一种封装型半导体器件及其制造方法，其可靠性和产率在不使制造工艺复杂化的情况下得到增强。 树脂层和支撑体形成在形成有焊盘电极的半导体衬底的前表面上。 然后，通过蚀刻去除树脂层和支撑体，以露出焊盘电极。 通过该蚀刻，同时去除在切割线上彼此相对的两个导电端子形成区域中的支撑体和与其间的这些区域连接的区域中的支撑体，以形成开口，如图1所示。 3C。 然后，在露出在开口中的焊盘电极上形成金属层，并且还在其上形成导电端子。 最后，沿着切割线进行切割以在单个半导体管芯中分离半导体衬底。

公开(公告)号：US07417413B2

公开(公告)日：2008-08-26

申请号：US11693149

申请日：2007-03-29

申请人： Takashi Noma ,  Hiroshi Takemura

发明人： Takashi Noma ,  Hiroshi Takemura

IPC分类号： G05F1/565 ,  G05F1/56

CPC分类号： H02M3/156

摘要： A ripple converter includes a transistor for switching an input direct-current voltage, a choke coil and a smoothing capacitor for smoothing the switched direct-current voltage, a flywheel diode for causing a current to flow through the choke coil when the transistor is turned off, and a comparing unit for controlling the ON/OFF of the transistor according to ripple in an output voltage. In the ripple converter, a waveform converter is provided on a connecting path between an output terminal and a non-inverting input terminal of a comparator in the comparing unit. A result of converting the waveform of the output voltage is compared with a reference voltage, and a result of the comparison is fed back to the transistor.

摘要翻译： 纹波转换器包括用于切换输入直流电压的晶体管，用于平滑切换的直流电压的扼流线圈和平滑电容器;当晶体管截止时，用于使电流流过扼流线圈的续流二极管 以及用于根据输出电压中的纹波来控制晶体管的导通/截止的比较单元。 在纹波转换器中，波形转换器设置在比较单元中的比较器的输出端子和非反相输入端子之间的连接路径上。 将输出电压的波形转换的结果与参考电压进行比较，将比较结果反馈给晶体管。