Abstract:
A direct current (“DC”) calibration reference voltage is applied at an input terminal of an N-level sigma-delta analog-to-digital converter (“ADC”). The ADC includes a current-mode DAC (“I-DAC”) operating as a feedback element. A count of logical 1s associated with each of N output levels is taken at outputs of a modulator portion of the ADC during a first mismatch measurement interval. Mismatch measurement logic subsequently transposes pairs of current sources between level selection switch matrices. Doing so causes modulator output error components resulting from mismatches between I-DAC current sources (“delta”) to appear as differential level-specific output counts. The mismatch measurement logic compares the differential counts to determine values of delta. The ADC then factors decimated modulator output counts by values of delta in order to correct for the I-DAC current source mismatch(es).
Abstract:
A communication system includes digital transmitter circuitry (26) including a CRC (cyclic redundancy check) generator circuit (28) generating a first CRC code based on a message and appending the CRC code to the message a first data packet, and circuitry (26-1,2,3) transforming the first data packet to provide a second data packet and transmitting it. Digital receiver circuitry (120) includes circuitry (12-1,2,3) receiving the second data packet, a CRC verification circuit (14-1) comparing a received digital CRC code portion of the second data packet to a calculated digital CRC code portion including any introduced error to detect the existence of any error in the second data packet. The message is presented for further processing if no error is detected, and a CRC-based FEC (forward error correction) circuit (14-2) receives the message and calculated digital CRC code from the verification circuit if an error is detected, corrects the detected error, and indicates the error is uncorrectable if the correction is unsuccessful.
Abstract:
Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.
Abstract:
Methods and apparatus for a low energy accelerator processor architecture with short parallel instruction word. An integrated circuit includes a system bus having a data width N, where N is a positive integer; a central processor unit coupled to the system bus and configured to execute instructions retrieved from a memory coupled to the system bus; and a low energy accelerator processor coupled to the system bus and configured to execute instruction words retrieved from a low energy accelerator code memory, the low energy accelerator processor having a plurality of execution units including a load store unit, a load coefficient unit, a multiply unit, and a butterfly/adder ALU unit, each of the execution units configured to perform operations responsive to op-codes decoded from the retrieved instruction words, wherein the width of the instruction words is equal to the data width N. Additional methods and apparatus are disclosed.
Abstract:
Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.
Abstract:
An apparatus for a low energy accelerator processor architecture is disclosed. An example arrangement is an integrated circuit that includes a system bus having a data width N, where N is a positive integer; a central processor unit is coupled to the system bus and configured to execute instructions retrieved from a memory; a low energy accelerator processor is configured to execute instruction words received on the system bus and has a plurality of execution units including a load store unit, a load coefficient unit, a multiply unit, and a butterfly/adder ALU unit, wherein each of the execution units is configured to perform operations responsive to retrieved instruction words; and a non-orthogonal data register file comprising a set of data registers coupled to the plurality of execution units, wherein the registers coupled to selected ones of the plurality of execution units. Additional methods and apparatus are disclosed.
Abstract:
Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.
Abstract:
Methods, apparatus, systems and articles of manufacture to determine and apply polarity-based error correction code are disclosed. In some examples, the methods and apparatus create an array by setting a first set of bit locations of a code word to have a first value and setting a second set of bit locations of the code word to have a second value different from the first value. In some examples, when the array satisfies a parity check, the methods and apparatus determine that bit locations having the first value from the array form a polarity-based error correction code.
Abstract:
Methods and apparatus to measure detect and correct errors in destructive read non-volatile memory are disclosed. In some examples, the method and apparatus determine, in response to stabilizing a power supply, a status signature stored in non-volatile memory. In examples wherein the status signature is not normal, the methods and apparatus decode an error correction code that is encoded in a destructive read non-volatile memory.
Abstract:
A method of operating a memory circuit (FIGS. 8A and 8B) is disclosed. The method includes writing true data (01) to a plurality of bits (B0, B1). A first data state (0) is written to a signal bit (Bi) indicating the true data. The true data is read and complementary data (10) is written to the plurality of bits. A second data state (1) is written to the signal bit indicating the complementary data.