公开(公告)号：US20130116148A1

公开(公告)日：2013-05-09

申请号：US13805170

申请日：2011-05-17

申请人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Takafumi Saito ,  Sumio Kawata

发明人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Takafumi Saito ,  Sumio Kawata

IPC分类号： G01N33/68

CPC分类号： G01N33/576 ,  G01N33/5767 ,  G01N2800/085 ,  G01N2800/7009

摘要： Disclosed is a method for promptly identifying a liver disease. A normal person or a liver disease such as drug-induced liver injury, asymptomatic hepatitis B carrier, chronic hepatitis B, hepatitis C with persistently normal ALT, chronic hepatitis C, cirrhosis type C, hepatocellular carcinoma, simple steatosis, or non-alcoholic steatohepatitis is identified by measuring the concentration of a γ-Glu-X (wherein X represents an amino acid or an amine) peptide or the level of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value.

摘要翻译： 公开了一种迅速鉴别肝脏疾病的方法。 正常人或肝脏疾病如药物诱导的肝损伤，无症状乙型肝炎携带者，慢性乙型肝炎，丙型肝炎持续ALT正常，慢性丙型肝炎，C型肝硬化，肝细胞癌，单纯脂肪变性或非酒精性脂肪性肝炎 通过测量γ-Glu-X（其中X表示氨基酸或胺）肽的浓度或血液中AST或ALT的水平进行鉴定，并且基于测量值进行多重逻辑回归 。

公开(公告)号：US20130001592A1

公开(公告)日：2013-01-03

申请号：US13531793

申请日：2012-06-25

申请人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7825 ,  H01L29/7827

摘要： In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

摘要翻译： 在碳化硅半导体器件中，多个沟槽在一个方向上具有纵向方向并且被布置成条纹图案。 每个沟槽具有在纵向方向上延伸的第一和第二侧壁。 第一侧壁与（11-20）面和（1-100）面中的一个成锐角，第二侧壁与（11-20）面和 （1-100）平面，第一锐角小于第二锐角。 第一导电类型区域仅与每个沟槽的第一和第二侧壁中的第一侧壁接触，并且仅在第一和第二侧壁中的第一侧壁上形成电流通路。

公开(公告)号：US20120319136A1

公开(公告)日：2012-12-20

申请号：US13581497

申请日：2012-02-06

申请人： Masato Noborio ,  Kensaku Yamamoto ,  Hideo Matsuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Masato Noborio ,  Kensaku Yamamoto ,  Hideo Matsuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/24 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/7397

摘要： A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage.

摘要翻译： SiC器件包括反转型MOSFET，其具有：依次堆叠的衬底，漂移层和基极区域; 源极和接触区域在基极区域的上部; 穿透源区和基区的沟槽; 沟槽中的栅极绝缘膜上的栅电极; 源极与源极和基极区域耦合; 位于衬底背面的漏电极; 以及在漂移层的上部比沟槽更深的多个深层。 每个深层在深度方向上具有杂质浓度分布，并且在施加栅极电压下在沟槽侧的深层的一部分中设置反转层。

公开(公告)号：US20120061682A1

公开(公告)日：2012-03-15

申请号：US13229892

申请日：2011-09-12

申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/24 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

公开(公告)号：US20110273510A1

公开(公告)日：2011-11-10

申请号：US12965763

申请日：2010-12-10

申请人： Masahiro Sugimoto ,  Akira Kida ,  Masaharu Ueda

发明人： Masahiro Sugimoto ,  Akira Kida ,  Masaharu Ueda

IPC分类号： B41J2/165

CPC分类号： B41J2/16585 ,  B41J2/16552 ,  B41J3/543 ,  B41J2002/16502

摘要： A plurality of recording head units are supported by a holder in an integrated manner. The recording head units and pairs of rollers which hold a sheet are arranged alternately along a sheet conveying direction. An elastic member is disposed in a clearance between the holder and each of the recording head units supported by the holder in an elastically deformed manner to form an airtight seal. The airtight seal prevents upward leakage, from the clearance, of the humidifying gas introduced into the narrow space to which ink nozzles of the recording head units are exposed.

摘要翻译： 多个记录头单元由保持器以一体的方式支撑。 保持片材的记录头单元和辊对沿着纸张传送方向交替布置。 弹性构件设置在保持器和由保持器以弹性变形方式支撑的每个记录头单元之间的间隙中以形成气密密封。 气密密封件防止从引入到记录头单元的墨喷嘴的狭窄空间中的加湿气体的间隙向上泄漏。

公开(公告)号：US07879705B2

公开(公告)日：2011-02-01

申请号：US12440939

申请日：2007-09-21

申请人： Akira Kawahashi ,  Masahiro Sugimoto ,  Akinori Seki ,  Masakatsu Maeda ,  Yasuo Takahashi

发明人： Akira Kawahashi ,  Masahiro Sugimoto ,  Akinori Seki ,  Masakatsu Maeda ,  Yasuo Takahashi

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/78 ,  Y10S438/931

摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.

摘要翻译： 阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。 在该方法中，在SiC衬底的表面上形成Ti层和Al层。 具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。 第一个温度是Ti与Al反应形成Al3Ti的温度区的最低温度，第二个温度是Al3Ti与SiC反应形成Ti3SiC2的温度区的最低温度。 由于这种维持温度步骤的结果，在SiC衬底的表面上形成Al 3 Ti层。 该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。 作为进一步加热的步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应以在SiC衬底的表面上形成Ti 3 SiC 2层。

公开(公告)号：US4742024A

公开(公告)日：1988-05-03

申请号：US076762

申请日：1987-07-23

申请人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

发明人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/055 ,  H01L23/34 ,  H01L23/367 ,  H01L39/02

CPC分类号： H01L23/055 ,  H01L23/3675 ,  H01L2224/32225 ,  H01L2924/01079 ,  Y10T29/4913 ,  Y10T29/53174 ,  Y10T29/53178

摘要： A semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap to cover the opening and to make contact with the semiconductor element via the opening, so that heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device comprises the steps of mounting the semiconductor element on the substrate, covering the semiconductor element by the cap which is fixed to the substrate, and mounting the heatsink member on the cap to cover the opening and to make contact with the semiconductor element via the opening.

公开(公告)号：US4724472A

公开(公告)日：1988-02-09

申请号：US6347

申请日：1987-01-14

申请人： Masahiro Sugimoto ,  Tetsushi Wakabayashi ,  Kiyoshi Muratake

发明人： Masahiro Sugimoto ,  Tetsushi Wakabayashi ,  Kiyoshi Muratake

IPC分类号： H01L23/12 ,  H01L23/057 ,  H01L23/498 ,  H01L23/538 ,  H05K3/34 ,  H01L23/02

CPC分类号： H01L24/32 ,  H01L23/057 ,  H01L23/49811 ,  H01L23/5385 ,  H05K3/3426 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/351 ,  H05K2201/10704 ,  H05K2201/10909 ,  H05K2201/2081 ,  Y02P70/613

摘要： A semiconductor device to be mounted on a circuit board, including a semiconductor chip, a package for mounting the semiconductor chip, a plurality of conductor pads provided on the outer surface of the package, and a plurality of conductor pins, connected to the conductor pads in a substantially vertical contact condition, for connecting to the circuit board in accordance with a contacting condition.

摘要翻译： 一种半导体器件，其安装在电路板上，包括半导体芯片，用于安装半导体芯片的封装，设置在封装外表面上的多个导体焊盘以及连接到导体焊盘的多个导体引脚 在基本垂直的接触状态下，根据接触条件连接到电路板。

公开(公告)号：US4688077A

公开(公告)日：1987-08-18

申请号：US822964

申请日：1986-01-28

申请人： Tetsushi Wakabayashi ,  Masahiro Sugimoto ,  Kiyoshi Muratake

发明人： Tetsushi Wakabayashi ,  Masahiro Sugimoto ,  Kiyoshi Muratake

IPC分类号： H01L23/36 ,  H01L23/367 ,  H05K13/00 ,  H01L23/02

CPC分类号： H01L23/367 ,  H01L2224/48091 ,  H01L2224/73265

摘要： A semiconductor device having a semiconductor package and a radiator. The semiconductor package houses a semiconductor chip therein. The radiator includes a pillar which has a plurality of fins thereon. One end of the pillar is bonded to the semiconductor package. A hole is formed in the other end of the pillar and extends the longitudinal direction of the pillar.

摘要翻译： 一种具有半导体封装和散热器的半导体器件。 半导体封装在其中容纳半导体芯片。 散热器包括在其上具有多个翅片的支柱。 柱的一端接合到半导体封装。 在柱的另一端形成孔，并且延伸柱的纵向方向。

公开(公告)号：US4209612A

公开(公告)日：1980-06-24

申请号：US957845

申请日：1978-11-06

申请人： Keiichi Takahashi ,  Takao Iida ,  Kunikatsu Shirahata ,  Masahiro Sugimoto ,  Shinzo Ishii ,  Ryo Okachi ,  Takashi Nara

发明人： Keiichi Takahashi ,  Takao Iida ,  Kunikatsu Shirahata ,  Masahiro Sugimoto ,  Shinzo Ishii ,  Ryo Okachi ,  Takashi Nara

IPC分类号： A61K31/35 ,  A61K31/351 ,  A61P31/04 ,  C07D309/28 ,  C07H15/224 ,  C12P19/48 ,  C07H15/22

CPC分类号： C07H15/224 ,  C12P19/48

摘要： New antibiotic compounds, Fortimicin factors KF and KG are produced by fermentation of microorganisms belonging to the genus Micromonospora. The antibiotic compounds are accumulated in the culture liquor and are isolated therefrom.

摘要翻译： 新型抗生素化合物，Fortimicin因子KF和KG通过发酵属于小单孢菌属的微生物产生。 抗生素化合物在培养液中积聚并从中分离。