利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

117 条记录 (耗时 0.038 秒)

    Light emitting device and method of manufacturing the same
    21.
    发明授权
    Light emitting device and method of manufacturing the same 失效
    发光元件及其制造方法

    公开(公告)号：US08419497B2

    公开(公告)日：2013-04-16

    申请号：US12923949

    申请日：2010-10-15

    申请人： Isao Takasu ,  Yuko Nomura ,  Tsuyoshi Hioki ,  Isao Amemiya ,  Kazuhide Abe

    发明人： Isao Takasu ,  Yuko Nomura ,  Tsuyoshi Hioki ,  Isao Amemiya ,  Kazuhide Abe

    IPC分类号： H01J9/00

    CPC分类号： H01L33/54 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.

    摘要翻译： 一种制造发光器件的方法。 该方法包括：将发光芯片安装在基板上; 通过使用液滴喷射装置形成透明树脂部分和荧光体层，所述透明树脂部分形成为圆顶形状并且覆盖所述发光芯片以将其外部填充在所述基板上，所述荧光体层包含磷光体和 形成在透明树脂部分的至少其顶侧附近的外部; 并且在透明树脂部分的外部和靠近基板的荧光体层的位置处形成反射层。

    Power amplifier
    23.
    发明授权
    Power amplifier 失效
    功率放大器

    公开(公告)号：US07619470B2

    公开(公告)日：2009-11-17

    申请号：US11687770

    申请日：2007-03-19

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC分类号： H03F3/217

    CPC分类号： H03F3/2176 ,  H03F1/02 ,  H03F3/245 ,  H03F2200/366 ,  H03F2200/391 ,  H03F2203/21178 ,  H03G1/0088

    摘要： A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.

    摘要翻译： 功率放大器包括：多个并联连接的场效应晶体管，每个具有第一和第二端，所述第一端连接到地; 放大单元，其包括电感器，电容器和带通滤波器中的至少一个，并具有第三和第四端，第三端连接到场效应晶体管的第二端，第四端输出放大的输出 信号; 以及幅度控制器，其基于用于对场效应晶体管进行选择的地址信号和时钟信号，分别向场效应晶体管的栅极发送控制信号以导通或关闭场效应晶体管。 场效应晶体管的沟道宽度彼此不同。

    SEMICONDUCTOR DEVICE
    24.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090134430A1

    公开(公告)日：2009-05-28

    申请号：US12276787

    申请日：2008-11-24

    申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Kazuhiko Itaya

    IPC分类号： H01L27/105

    CPC分类号： H01L27/088 ,  H01L23/4824 ,  H01L27/0207 ,  H01L27/105 ,  H01L29/1033 ,  H01L29/41758 ,  H01L29/7831 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A semiconductor device includes a substrate including an element region having a polygonal shape defined by a plurality of edges, and an isolation region surrounding the element region, and a plurality of gate electrodes provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected with each other, wherein at least one of the edges does not cross any of the gate electrodes, and is not parallel to the gate electrodes.

    摘要翻译： 半导体器件包括：衬底，其包括具有由多个边缘限定的多边形形状的元件区域和围绕该元件区域的隔离区域;以及多个栅电极，设置在该衬底上，与该元件区域交叉，与该 彼此电连接，其中至少一个边缘不与任何栅电极交叉，并且不平行于栅电极。

    Power amplifier and transmission and reception system
    25.
    发明授权
    Power amplifier and transmission and reception system 有权
    功率放大器和发射和接收系统

    公开(公告)号：US07508268B2

    公开(公告)日：2009-03-24

    申请号：US11857737

    申请日：2007-09-19

    申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Hideyuki Funaki

    IPC分类号： H03F3/68

    CPC分类号： H03F3/604 ,  H01L21/823425 ,  H01L27/088 ,  H03F1/3205 ,  H03F3/16 ,  H03F3/607 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/451 ,  H03F2200/468 ,  H03F2200/543 ,  H03F2200/78 ,  H03F2203/7236

    摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.

    摘要翻译： 功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

    Receiver and Wireless Communication Apparatus
    28.
    发明申请
    Receiver and Wireless Communication Apparatus 失效
    接收机和无线通信设备

    公开(公告)号：US20080254756A1

    公开(公告)日：2008-10-16

    申请号：US11568365

    申请日：2006-09-25

    申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

    发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

    IPC分类号： H04B1/16 ,  H04B1/38

    CPC分类号： H04L27/2272 ,  H03C3/0966 ,  H03D3/242 ,  H04B1/38 ,  H04L27/2273 ,  H04L2027/0016 ,  H04L2027/0022 ,  H04L2027/0055 ,  H04W56/00 ,  H04W88/02 ,  Y02D70/1222 ,  Y02D70/40

    摘要： A receiver has a first voltage control oscillator configured to generate a first oscillation signal, a second voltage control oscillator configured to generate a second oscillation signal having a first phase, a first phase comparator configured to detect a phase difference between the first and second oscillation signals, a demodulator configured to perform demodulation processing of the received signal and to generate timing information of a second phase included in the first oscillation signal, a second phase comparator configured to detect the phase difference between the first and second oscillation signals, and a first control voltage generator configured to generate a first control voltage for controlling a phase and a frequency of the second voltage control oscillator based on the phase difference detected by the second phase comparator.

    摘要翻译： 一种接收器具有：第一电压控制振荡器，被配置为产生第一振荡信号;第二压控振荡器，被配置为产生具有第一相位的第二振荡信号;第一相位比较器，被配置为检测第一和第二振荡信号之间的相位差; 解调器，被配置为执行所述接收信号的解调处理并生成包括在所述第一振荡信号中的第二相位的定时信息;第二相位比较器，被配置为检测所述第一和第二振荡信号之间的相位差;以及第一控制 电压发生器被配置为基于由第二相位比较器检测的相位差产生用于控制第二压控振荡器的相位和频率的第一控制电压。