摘要:
A nucleic acid quantification method that uses a microchip for nucleic acid amplification reaction, the microchip including an inlet through which a liquid is introduced from outside, a plurality of reaction regions provided as reaction sites of a nucleic acid amplification reaction, and a channel through which the liquid introduced through the inlet is supplied into each of the reaction regions, wherein the likelihood of the nucleic acid amplification reaction varies between the reaction regions, includes: flowing a detection target nucleic acid chain-containing solution through the channel and introducing the solution into each of the reaction regions to perform a nucleic acid amplification reaction; and detecting an amplification product in each of the reaction regions to specify the reaction regions in which the nucleic acid amplification reaction occurred.
摘要:
A sample solution introduction kit and a sample solution injector capable of introducing sample solution while reducing the rate of occurrence of an air bubble and having a simplified structure are proposed.A sample solution introduction kit includes a plate-like member and a sample solution injector. The plate-like member has a plurality of spaces formed therein and serving as reaction field and a communication space that communicates with the plurality of spaces therein and that has a portion defining an opening formed in a surface of the plate-like member, and the sample solution injector includes a container containing the sample solution, a tube that communicates with the bottom of the container and that is insertable into the opening, a stopper removably fitted into an opening formed at a top end of the tube, and liquid held in the container, and the liquid is insoluble in the sample solution and is lighter than the sample solution.
摘要:
There are provided an interaction detecting portion including an interaction region in the whole of which an electrodynamic effect is obtained, and which has a simpler structure, and the like. There is provided an interaction detecting portion 1 including at least: a reaction region 2 which provides a field for an interaction between materials, and an electrode E1 (or a group of electrodes), having the same potential, which is provided so as to face the reaction region 2. In addition, there are provided a sensor chip, such as a DNA chip or a protein chip, including the interaction detecting portion 1, and an interaction detector using the detection portion 1.
摘要:
A detecting unit for detecting interaction between substances includes a pair of first opposed electrodes disposed opposite to each other so as to sandwich a reaction area providing a field for the interaction between the substances, and both or one of electrodes forming second opposed electrodes disposed opposite to each other in a direction of an axis crossing an opposing axis of the first opposed electrodes.
摘要:
A polishing method able to easily flatten unevenness formed on the surface of a film to be polished and able to efficiently polish the film flat while suppressing damage to an interlayer insulating film below the film, comprising, when polishing an object having a film such as an interconnection layer formed burying interconnection grooves formed in an insulating film of a substrate, supplying a polishing solution over the surface to be polished at least substantially parallel to the surface to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the processing solution or arranging a cathode member facing the surface and supplying an electrolytic solution containing a chelating agent between the surface and cathode member while supplying voltage between the film and the cathode member to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the electrolytic solution, and a polishing apparatus using the same.
摘要:
A method of producing a semiconductor device capable of suppressing damages by corrosion on wiring in a catalyst process performed in electroless plating processing on a Co base material, etc. in producing a semiconductor device having wiring of Cu, etc., having steps of forming metal wiring including an additive on a first insulation film formed in a semiconductor substrate, and forming on the metal wiring a barrier layer for preventing diffusion of constituting elements of the metal wiring, wherein said additive is an element to reduce corrosion of the metal wiring at the time of forming the barrier layer in the step of forming the metal wiring.
摘要:
A polishing method able to easily flatten unevenness formed on the surface of a film to be polished and able to efficiently polish the film flat while suppressing damage to an interlayer insulating film below the film, comprising, when polishing an object having a film such as an interconnection layer formed burying interconnection grooves formed in an insulating film of a substrate, supplying a polishing solution over the surface to be polished at least substantially parallel to the surface to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the processing solution or arranging a cathode member facing the surface and supplying an electrolytic solution containing a chelating agent between the surface and cathode member while supplying voltage between the film and the cathode member to preferentially remove by polishing the projecting portions of the film and flatten the surface by the shear stress of the electrolytic solution, and a polishing apparatus using the same.
摘要:
A method of electroless plating for processing a plating surface to form a barrier layer being capable of uniformly forming a barrier layer and reducing the consumption of a processing solution, comprising a step of feeding a processing solution used in at least one of the pre-processing steps of the electroless plating and the electroless plating step to the plating surface for puddling treatment, or, using a processing solution at least containing, with respect to one mole of a first metallic material supplying a main ingredient of the barrier layer, three or more moles of a completing agent and three or more moles of reducing agent and having a pH value adjusted to 9 or more and stored in an atmosphere of an inert gas or ammonia gas, and a corresponding electroless plating apparatus.
摘要:
A process for fabricating a semiconductor device, which comprises forming, on a metal wiring formed from copper or a copper alloy, a barrier film which functions as a diffusion-preventing film for the metal wiring by an electroless plating method, wherein a catalytic metal film which serves as a catalyst in the electroless plating method is selectively formed on the metal wiring by a displacement plating method using a displacement plating solution at a temperature in the range of 30° C. or more and lower than a boiling point thereof, and the barrier film is selectively formed on the catalytic metal film by the electroless plating method. It is an object of the present invention, to selectively and uniformly carry out the catalyst activation to the surface of the metal wiring made of copper or a copper alloy by using palladium so as to improve plating property of the electroless plating method using a hypophosphite as a reducing agent and the reliability of the wiring.
摘要:
An oscillation circuit for producing an output whose frequency accords with an input voltage value, comprises a first constant current source whose current has a value according to the input voltage value; a charge capacitor to be charged by the first constant current source; a comparator having one input terminal connected to a charge terminal of the charge capacitor to be charged and an other input terminal supplied with a first reference voltage, for comparing inputs to both input terminals with each other and outputting an output signal having a high level or a low level; and first switch means for pulling down a potential of the charge terminal of the charge capacitor to a second reference voltage lower than the first reference voltage under control by an output of the comparator.