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公开(公告)号：US5467364A
公开(公告)日：1995-11-14
申请号：US287802
申请日：1994-08-09
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34 , H01S2301/18 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/32308 , H01S5/3421 , H01S5/3428 , H01S5/3432
摘要： A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.
摘要翻译： 本发明的半导体激光器具有由以下部分构成的元件的结构：载体块层，从在元件的表面沿垂直方向形成的截面中的双方形成的有源层的外侧形成，用于降低导光功能 活性层; 在所述载体块层和包层之间的外侧提供波导引导层，使得波导层夹在包层之间。 本发明克服了传统的弱引导激光和LOC结构激光器在设计用于控制引导模式的装置方面的困境。 本发明还解决了获得更高输出和辐射束的低色散并改善光束轮廓的问题。
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22.发明授权Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive 有权半导体激光器，半导体激光器，光学拾取器和光盘驱动器的制造方法公开(公告)号：US08896002B2
公开(公告)日：2014-11-25
申请号：US12568855
申请日：2009-09-29
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/168 , H01S5/2275 , H01S5/2277 , H01S5/34333
摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.
摘要翻译： 一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域， 以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。 每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。 掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。 基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。
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公开(公告)号：US08437375B2
公开(公告)日：2013-05-07
申请号：US12998518
申请日：2008-10-31
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/2009 , H01S5/2031 , H01S5/3213 , H01S2301/18
摘要： A semiconductor laser element may include an n-type clad layer; an n-type waveguide layer adjacent to the n-type clad layer; an n-type carrier blocking layer adjacent to the n-type waveguide layer; an active layer; and a p-type clad layer adjacent to the active layer. The n-type clad layer may have a bandgap width greater than a bandgap width of the n-type waveguide layer. The n-type carrier blocking layer may have a bandgap width greater than or equal to bandgap widths of the first and second barrier layers. The p-type clad layer may have a bandgap width greater than the bandgap widths of the first and second barrier layers and the bandgap width of the n-type waveguide layer. The active layer may include a quantum well layer and barrier layers.
摘要翻译： 半导体激光元件可以包括n型覆盖层; 与n型覆盖层相邻的n型波导层; 与n型波导层相邻的n型载流子阻挡层; 活性层 以及与有源层相邻的p型覆盖层。 n型覆盖层的带隙宽度可以大于n型波导层的带隙宽度。 n型载流子阻挡层的带隙宽度可以大于或等于第一和第二阻挡层的带隙宽度。 p型覆盖层的带隙宽度可以大于第一和第二阻挡层的带隙宽度和n型波导层的带隙宽度。 有源层可以包括量子阱层和阻挡层。
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公开(公告)号：US08038921B2
公开(公告)日：2011-10-18
申请号：US11918972
申请日：2005-09-13
申请人： Yoshifumi Itabashi , Yoshihiro Jizo , Akihiro Fujita , Keizou Yoshikawa , Tsuyoshi Fujimoto , Hiromori Ishihara , Nobuhiko Mizuno , Futoshi Yonekawa , Tomomi Hasegawa
发明人： Yoshifumi Itabashi , Yoshihiro Jizo , Akihiro Fujita , Keizou Yoshikawa , Tsuyoshi Fujimoto , Hiromori Ishihara , Nobuhiko Mizuno , Futoshi Yonekawa , Tomomi Hasegawa
IPC分类号： B29C45/14
CPC分类号： B29C45/14065 , B29C33/123 , B29C2045/1409
摘要： A process for producing a molding having an embedded member which comprises: a first step in which a mold (1) having pins (3) which extend from the outside to the inside of the mold and can be withdrawn outward is heated to a given temperature; a second step in which a member (2) to be embedded is held in a given position within the mold by supporting the member, including an upper part thereof, with the pins (3); a third step in which a thermoplastic resin is packed through a gate (1d) first into that part of the cavity of the mold (1) which is located under the member to be embedded to thereby cause the thermoplastic resin to press the member against the pin (3) located in an upper part of the mold; a fourth step in which the thermoplastic resin is packed into the remaining part of the cavity of the mold (1); and a fifth step in which the pins (3) are withdrawn successively from the lower side of the mold before cooling to a temperature at which the thermoplastic resin solidifies and loses its flowability.
摘要翻译： 一种具有嵌入构件的模制品的制造方法，包括：第一步骤，其中具有从模具的外部延伸到内部并可向外取出的销（3）的模具（1）被加热至给定温度 ; 第二步骤，其中通过将包括其上部的构件与所述销（3）支撑而将待嵌入的构件（2）保持在所述模具内的给定位置; 第三步骤，其中热塑性树脂首先通过浇口（1d）填充到位于待嵌入构件下方的模具（1）的空腔的那部分中，从而使热塑性树脂按压该构件 销（3）位于模具的上部; 第四步，将热塑性树脂填充到模具（1）的空腔的剩余部分中; 以及在冷却至热塑性树脂固化并失去其流动性的温度之前，将销（3）从模具的下侧依次取出的第五步骤。
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公开(公告)号：US07943407B2
公开(公告)日：2011-05-17
申请号：US12591286
申请日：2009-11-16
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/22
摘要： A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.
摘要翻译： 一种制造半导体激光器的方法包括以下步骤：形成具有对应于氮化物基III-V族化合物半导体层上形成的脊条的条形掩模部分的掩模层，蚀刻氮化物基III族 -V化合物半导体层到预定深度，使用掩模层形成脊条，形成抗蚀剂以覆盖掩模层和基于氮化物的III-V族化合物半导体层，将抗蚀剂刻蚀至条状 掩模层的掩模部分被暴露，通过蚀刻去除掩模层的暴露的掩模部分以暴露脊条的上表面，在抗蚀剂和暴露的脊条上形成金属膜，以在脊条上形成电极 与形成在其上的金属膜一起除去抗蚀剂，并通过蚀刻去除掩模层。
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26.发明授权Semiconductor laser, method of mounting semiconductor laser, semiconductor laser mounted structure, and optical disk system 有权半导体激光器，半导体激光器的安装方法，半导体激光安装结构以及光盘系统公开(公告)号：US07561606B2
公开(公告)日：2009-07-14
申请号：US11264538
申请日：2005-10-31
IPC分类号： H01S3/04
CPC分类号： H01S5/2231 , B82Y20/00 , G11B7/127 , H01L24/05 , H01L2224/04042 , H01L2224/05644 , H01L2224/48091 , H01L2224/85444 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01S5/0224 , H01S5/02248 , H01S5/02272 , H01S5/0425 , H01S5/06226 , H01S5/2214 , H01S5/34333 , H01L2224/45099 , H01L2924/00
摘要： An upper portion of a second clad layer and a contact layer are provided with grooves so as to form a ridge therebetween. An electrode is formed on the ridge. An insulation film is formed to extent on side surfaces of the ridge, on the inside of the grooves, and those portions of the contact layer which are located on the outside of the grooves. The thickness of those portions of the insulation film which are located on the contact layer in the areas on the outside of the grooves is set to be greater than at least the thickness of the electrode. Besides, a pad electrode is formed to cover the electrode and to extend on the insulation film on the upper side of the areas on the outside of the grooves. The upper surfaces of those portions of the pad electrode which are located on the upper side of the areas on the outside of the grooves are set to be above the upper surface of that portion of the pad electrode which is located on the upper side of the ridge.
摘要翻译： 第二覆盖层和接触层的上部设置有沟槽，以在其间形成脊。 在脊上形成电极。 在槽的侧面，槽的内侧和接触层的位于槽的外侧的部分形成绝缘膜。 位于槽的外侧区域中的接触层上的绝缘膜的那些部分的厚度被设定为大于至少电极的厚度。 此外，形成焊盘电极以覆盖电极并且在槽的外侧上的区域的上侧上的绝缘膜上延伸。 位于槽的外侧的区域的上侧的焊盘电极的那些部分的上表面被设定在位于焊盘电极的上侧的焊盘电极的该部分的上表面的上方 岭。
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公开(公告)号：US20060192209A1
公开(公告)日：2006-08-31
申请号：US11344468
申请日：2006-01-31
申请人： Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
发明人： Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
CPC分类号： H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01S5/0206 , H01S5/0217 , H01S5/026 , H01S5/34333 , H01S5/4031
摘要： An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).
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公开(公告)号：US5393133A
公开(公告)日：1995-02-28
申请号：US26035
申请日：1993-03-04
申请人： Tsuyoshi Fujimoto
发明人： Tsuyoshi Fujimoto
CPC分类号： B60R11/00 , B60T8/3685 , F16F15/08
摘要： A brake fluid pressure control apparatus has a solenoid valve and/or other fluid pressure control elements in a housing, and the reactive force resulting from the fluid pressure acting on the fluid pressure control elements is carried by a support member fastened to the housing. The support member is a flat plate member. Mounting tabs are formed integrally to and on the same plane as the support member, projecting outwardly from the ends thereof. The mounting tabs are each fastened to the bracket of the vehicle body through a rubber bushing and mounting case. Thus, the structure used to fasten the control apparatus to the vehicle body is simplified and the number of parts required for installation is reduced.
摘要翻译： 制动液压力控制装置在壳体中具有电磁阀和/或其他流体压力控制元件，并且由作用在流体压力控制元件上的流体压力产生的反作用力由固定到壳体的支撑构件承载。 支撑构件是平板构件。 安装突片一体地形成在与支撑构件相同的平面上，从其端部向外突出。 安装翼片各自通过橡胶衬套和安装壳体固定到车身的支架上。 因此，用于将控制装置紧固到车体的结构被简化，并且减少了安装所需的部件数量。
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公开(公告)号：US5368374A
公开(公告)日：1994-11-29
申请号：US130171
申请日：1993-10-01
申请人： Tsuyoshi Fujimoto
发明人： Tsuyoshi Fujimoto
CPC分类号： B60T8/4275 , B60T8/4872 , B60T8/5037
摘要： A brake fluid pressure control device is provided, and includes a main flow path for connecting, as one system, first and second wheel brakes with a master cylinder, a first reservoir, a fluid pressure adjusting member for selectively enabling the first and second wheel brakes to communicate with the master cylinder and the first reservoir, a pump for pressurizing brake fluid in the first reservoir so as to discharge the brake fluid to a junction of the main flow path and the pump. A second reservoir which is in communication with the fluid pressure adjusting member and the second wheel brake and, a directional control valve which is adapted, in a first state, to enable the master cylinder and the fluid pressure adjusting member to communicate with each other and in a second state to interrupt communication between the master cylinder and the fluid pressure adjusting member are also provided. A control unit is also provided which, at the time of traction control, sets the directional control valve to the second state and drives the pump so as to supply the brake fluid in the second reservoir to the first wheel brake through the fluid pressure adjusting member.
摘要翻译： 一种制动液压力控制装置，包括主流路，用于将作为一个系统的第一和第二轮制动器与主缸连接，第一储存器，用于选择性地使第一和第二制动轮能够实现的流体压力调节构件 与主缸和第一储存器连通，用于对第一储存器中的制动流体加压以将制动流体排放到主流路和泵的连接点的泵。 与液压调节构件和第二车轮制动器连通的第二储存器和在第一状态下适于使主缸和流体压力调节构件相互连通的方向控制阀，以及 还提供了用于中断主缸和流体压力调节构件之间的连通的第二状态。 还提供一种控制单元，其在牵引力控制时将方向控制阀设定到第二状态并驱动泵，以便通过流体压力调节构件将第二储存器中的制动流体供应到第一车轮制动器 。
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公开(公告)号：US5217281A
公开(公告)日：1993-06-08
申请号：US726796
申请日：1991-07-08
申请人： Tsuyoshi Fujimoto
发明人： Tsuyoshi Fujimoto
CPC分类号： B60T11/224 , B60T13/12 , B60T17/18 , B60T8/441 , B60T8/445 , B60T8/4836 , B60T8/94 , Y10S303/11
摘要： A braking fluid pressure control apparatus is provided including a master cylinder driven by force applied to a brake pedal for generating braking hydraulic pressure; an auxiliary power unit sucking fluid from a reservoir and pressurizing the fluid so as to store the fluid as an auxiliary power source; a booster having a boost chamber for generating boost pressure proportional to force applied to the brake pedal in the boost chamber in receipt of pressure supplied from the auxiliary power unit so that the thrust of the master cylinder is increased by the boost pressure generated by the force applied to the brake pedal and the boost pressure is used as braking pressure. A pressurizing unit housing is provided with a large-diameter opening and a small-diameter opening arranged in series. A first piston is provided which is slidably inserted into the small diameter opening and fluid-sealing the small-diameter opening so as to separate a first cylinder chamber and a second cylinder chamber from each other. A second piston slidably is inserted into the large-diameter opening so as to separate the second cylinder chamber and a third cylinder chamber form each other. A spring is provided for urging the second piston toward the second cylinder chamber and for opening and closing a port. The apparatus permits brakes to operate effectively even if a problem exists in the boost pressure line.
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