ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE
    22.
    发明申请
    ROBUST HIGH ASPECT RATIO SEMICONDUCTOR DEVICE 有权
    稳定的高倍率半导体器件

    公开(公告)号:US20110180931A1

    公开(公告)日:2011-07-28

    申请号:US13121268

    申请日:2009-09-24

    Abstract: The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

    Abstract translation: 本发明涉及一种半导体器件,其包括第一表面和布置在第一表面上的相邻的第一和第二电气元件,其中第一和第二元件中的每个元件在第一方向上从第一表面延伸,第一元件具有 基本上垂直于第一方向的横截面和至少部分地沿第一方向延伸的侧壁表面,其中侧壁表面包括沿着基本上平行于第一方向延伸的线邻接第一部分的第一部分和第二部分,其中, 第一和第二部分相对于彼此以一定角度放置以提供内角,其中内角处的侧壁表面至少部分地布置成距离第二元件的面对部分恒定的距离R,以提供 机械加强结构在内角。

    PROCESS FOR PRODUCING FLUOROCARBON MICROSTRUCTURE, FLUOROCARBON MICROSTRUCTURE, AND MICROSYSTEM
    23.
    发明申请
    PROCESS FOR PRODUCING FLUOROCARBON MICROSTRUCTURE, FLUOROCARBON MICROSTRUCTURE, AND MICROSYSTEM 失效
    生产氟化物微结构,氟化物微结构和微结构的方法

    公开(公告)号:US20100167014A1

    公开(公告)日:2010-07-01

    申请号:US12522871

    申请日:2008-01-21

    Abstract: A process for producing a fluorocarbon microstructure capable of easily fabricating a three-dimensional fluorocarbon microstructure. The process for producing a fluorocarbon microstructure comprises a first processing step for forming, on a substrate (2), a film deposition portion with a given pattern made up of a through-hole figure by etching the substrate (2), a fabricating step for forming a fluorocarbon film (6) on an inner circumferential surface of a film deposition portion (9) to fabricate a fluorocarbon region surrounded by the fluorocarbon film (6), and a second processing step for fabricating the fluorocarbon microstructure protruding from a processing surface of the substrate (2) by etching a given region other than a fluorocarbon region on the substrate (2). Hence, the three-dimensional fluorocarbon microstructure can be fabricated which comprises a complicated structure that has conventionally been hard to fabricate. Thus, a microchannel (1) equipped with the three-dimensional fluorocarbon microstructure can be easily fabricated.

    Abstract translation: 一种能够容易地制造三维碳氟化合物显微组织的氟碳微结构的制造方法。 制造碳氟化合物微结构的方法包括:第一处理步骤,用于通过蚀刻基板(2)在基板(2)上形成具有由通孔图形构成的给定图案的成膜部分, 在成膜部(9)的内周面上形成氟碳膜(6),以制造由碳氟化合物膜(6)包围的碳氟化合物区域;以及第二加工步骤,用于制造从处理表面 通过蚀刻在基板(2)上的碳氟化合物区域以外的给定区域而使基板(2)。 因此,可以制造三维碳氟化合物微结构,其包括通常难以制造的复杂结构。 因此,可以容易地制造装备有三维碳氟化合物微结构的微通道(1)。

    Method of manufacturing a hermetic chamber with electrical feedthroughs
    24.
    发明授权
    Method of manufacturing a hermetic chamber with electrical feedthroughs 有权
    制造具有电馈通的密封室的方法

    公开(公告)号:US07662653B2

    公开(公告)日:2010-02-16

    申请号:US11314696

    申请日:2005-12-20

    Abstract: A method of manufacturing a hermetically-sealed chamber with an electrical feedthrough includes the step of hermetically fixing an electrode to a substrate in a predetermined location on the substrate. A passage is formed through the substrate through the predetermined location such that at least a portion of the electrode is exposed to the passage. The passage is then at least partially filled with an electrically conductive material. A housing is then formed including the substrate such that the housing defines a chamber, with the electrode being disposed within the housing and the chamber being hermetically sealed. The electrode within the chamber can be placed in electrical communication with an exterior electrical component by way of the electrically conductive material in the passage.

    Abstract translation: 制造具有电馈通的气密密封室的方法包括将电极气密固定在基板上的预定位置上的步骤。 通过基板穿过预定位置形成通道,使得电极的至少一部分暴露于通道。 然后通道至少部分地填充有导电材料。 然后形成包括基板的壳体,使得壳体限定室,其中电极设置在壳体内,并且室被气密地密封。 室内的电极可以通过通道中的导电材料与外部电气部件电连接。

    Method of manufacturing a hermetic chamber with electrical feedthroughs
    27.
    发明申请
    Method of manufacturing a hermetic chamber with electrical feedthroughs 有权
    制造具有电馈通的密封室的方法

    公开(公告)号:US20060177956A1

    公开(公告)日:2006-08-10

    申请号:US11314696

    申请日:2005-12-20

    Abstract: A method of manufacturing a hermetically-sealed chamber with an electrical feedthrough includes the step of hermetically fixing an electrode to a substrate in a predetermined location on the substrate. A passage is formed through the substrate through the predetermined location such that at least a portion of the electrode is exposed to the passage. The passage is then at least partially filled with an electrically conductive material. A housing is then formed including the substrate such that the housing defines a chamber, with the electrode being disposed within the housing and the chamber being hermetically sealed. The electrode within the chamber can be placed in electrical communication with an exterior electrical component by way of the electrically conductive material in the passage.

    Abstract translation: 制造具有电馈通的气密密封室的方法包括将电极气密固定在基板上的预定位置上的步骤。 通过基板穿过预定位置形成通道,使得电极的至少一部分暴露于通道。 然后通道至少部分地填充有导电材料。 然后形成包括基板的壳体,使得壳体限定室,其中电极设置在壳体内,并且室被气密地密封。 室内的电极可以通过通道中的导电材料与外部电气部件电连接。

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