公开(公告)号：US20230393469A1

公开(公告)日：2023-12-07

申请号：US18235420

申请日：2023-08-18

Applicant: JSR CORPORATION

Inventor： Nozomi SAKANO ,  Ryuichi NEMOTO

IPC: G03F7/038 ,  C08F212/14 ,  C08F220/18 ,  C07D317/72 ,  C07D493/10 ,  C07D317/24 ,  C08F220/30 ,  C08F220/28 ,  G03F7/039

CPC classification number: G03F7/038 ,  C08F212/22 ,  C08F220/1807 ,  C07D317/72 ,  G03F7/039 ,  C07D317/24 ,  C08F220/303 ,  C08F220/283 ,  C07D493/10

Abstract: A radiation-sensitive resin composition includes a resin including a structural unit represented by formula (1), a radiation-sensitive acid generator, and a solvent. R1 is a hydrogen atom, a fluorine atom, or the like. R2 and R3 each independently represent a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R4 is a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R5 and R6 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R7 and R8 each independently represent a hydrogen atom, a monovalent hydrocarbon group having 1 to 10 carbon atoms, or the like. R9 and R10 each independently represent a monovalent organic group having 1 to 10 carbon atoms, or the like.

公开(公告)号：US11780947B2

公开(公告)日：2023-10-10

申请号：US16498448

申请日：2018-03-29

Applicant: Mitsui Chemicals, Inc.

Inventor： Toshikazu Sakamaki

IPC: C08F222/10 ,  A61K6/88 ,  A61K6/887 ,  A61C13/087 ,  C08F2/48 ,  C08F20/30 ,  C08F220/18

CPC classification number: C08F222/1025 ,  A61C13/087 ,  A61K6/887 ,  C08F2/48 ,  C08F20/30 ,  C08F222/1063 ,  C08F220/1807 ,  C08F222/1025 ,  C08F220/301 ,  C08F222/1063 ,  C08F220/301 ,  C08F222/1025 ,  C08F220/1807 ,  C08F222/1063 ,  C08F220/1807

Abstract: The present invention provides a photocurable composition for use in stereolithography, the photocurable composition including: a (meth)acrylic monomer (X) that is at least one selected from the group consisting of di(meth)acrylic monomers containing, within one molecule, two aromatic rings and two (meth)acryloyloxy groups, and that has a weight average molecular weight of from 400 to 580; a (meth)acrylic monomer (D) that is at least one selected from the group consisting of (meth)acrylic monomers containing, within one molecule, at least one aromatic ring and one (meth)acryloyloxy group, and that has a weight average molecular weight of from 140 to 350; and a photopolymerization initiator.

公开(公告)号：US11693316B2

公开(公告)日：2023-07-04

申请号：US17121190

申请日：2020-12-14

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： KhanhTin Nguyen ,  Masatoshi Arai ,  Nobuhiro Michibayashi

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  C08F220/18 ,  C08F212/14 ,  C08F220/30 ,  C08F212/32 ,  C08F220/28

CPC classification number: G03F7/0392 ,  C08F212/24 ,  C08F212/32 ,  C08F220/1805 ,  C08F220/1806 ,  C08F220/1807 ,  C08F220/1808 ,  C08F220/1811 ,  C08F220/1818 ,  C08F220/281 ,  C08F220/301 ,  G03F7/0045 ,  G03F7/0382

Abstract: A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1), and an acid generator component composed of an anion moiety and a cation moiety. In General Formula (a01-1), W1 represents a polymerizable group-containing group, Ct represents a tertiary carbon atom, R11 represents an unsaturated hydrocarbon group which may have a substituent, R12 and R13 represent a chain saturated hydrocarbon group which may have a substituent, and a carbon atom at an α-position of Ct constitutes a carbon-carbon unsaturated bond. In General Formula (a02-1), W2 represents a polymerizable group-containing group, Wa2 represents an aromatic hydrocarbon group, and n2 represents an integer in a range of 1 to 3

公开(公告)号：US11693314B2

公开(公告)日：2023-07-04

申请号：US17198575

申请日：2021-03-11

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Teppei Adachi ,  Shinya Yamashita ,  Masaki Ohashi ,  Tomohiro Kobayashi ,  Kenichi Oikawa ,  Takayuki Fujiwara

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  C07D307/93 ,  C07D493/18 ,  C07D327/04 ,  C08F220/18 ,  C07C381/12 ,  G03F7/20

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C07D307/93 ,  C07D327/04 ,  C07D493/18 ,  C08F220/1807 ,  C08F220/1808 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2006 ,  G03F7/2041

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

公开(公告)号：US20230167305A1

公开(公告)日：2023-06-01

申请号：US17538621

申请日：2021-11-30

Applicant: CANON KABUSHIKI KAISHA

Inventor： Niyaz Khusnatdinov

IPC: C09D4/00 ,  C09D5/00 ,  C09D133/08 ,  C09D135/02 ,  C08F220/18 ,  C08F222/10 ,  B05D3/06

CPC classification number: C09D4/00 ,  C09D5/002 ,  C09D133/08 ,  C09D135/02 ,  C08F220/1807 ,  C08F222/102 ,  B05D3/067

Abstract: A method of forming a photo-cured layer on a substrate can comprise using a first photocurable composition and a second photocurable composition, wherein both photocurable compositions may contain the same types of polymerizable monomers but in different concentration ratios. The concentration ratios of the monomers in each of the two photocurable compositions can be adapted that the uneven loss of one type of monomer from the first photocurable composition due to unwanted evaporation in certain regions of the substrate may be compensated by the second photocurable composition, which contains a higher amount of said monomer. The two photocurable compositions can further be adapted to easily merge to a combined layer with a very even distribution of the polymerizable monomers. This may allow forming photo-cured layers having an excellent homogeneous material structure throughout the layer.

公开(公告)号：US20230161252A1

公开(公告)日：2023-05-25

申请号：US17988082

申请日：2022-11-16

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Shun Kikuchi ,  Kousuke Ohyama

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F220/22 ,  C08F220/36

CPC classification number: G03F7/039 ,  C08F220/1806 ,  C08F212/24 ,  C08F220/22 ,  C08F220/1807 ,  C08F220/1811 ,  C08F220/1809 ,  C08F220/36

Abstract: A positive resist composition is provided comprising a base polymer end-capped with a salt consisting of an ammonium cation linked to a sulfide group and a fluorinated anion. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.

公开(公告)号：US20230159775A1

公开(公告)日：2023-05-25

申请号：US18056688

申请日：2022-11-17

Applicant: KYOCERA Document Solutions Inc.

Inventor： Katsuki OSANISHI

IPC: C09D11/322 ,  C08F220/06 ,  C08F220/18 ,  C09D11/107

CPC classification number: C09D11/322 ,  C08F220/06 ,  C08F220/1807 ,  C09D11/107

Abstract: An inkjet ink contains a pigment, a specific polymer, a water-soluble organic solvent, and water. The specific polymer includes at least one first repeating unit, at least one second repeating unit, at least one third repeating unit, and at least one fourth repeating unit. The first repeating unit is a repeating unit derived from a monomer having a salt-forming group. The second repeating unit is a repeating unit derived from a styrene-based monomer. The third repeating unit is a repeating unit derived from a styrene-based macromer having a polymerizable functional group at one end thereof. The fourth repeating unit is a repeating unit derived from nonionic acrylic acid ester or nonionic methacrylic acid ester.

公开(公告)号：US11644751B2

公开(公告)日：2023-05-09

申请号：US17114941

申请日：2020-12-08

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Junichi Miyakawa ,  Masatoshi Arai ,  Takashi Nagamine

IPC: G03F7/038 ,  G03F7/039 ,  C08F220/28 ,  C08F220/18

CPC classification number: G03F7/0382 ,  C08F220/1807 ,  C08F220/283 ,  G03F7/0392 ,  G03F7/0397

Abstract: A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group. In General Formula (a02-1), W represents a polymerizable group-containing group, Wax0 represents a cyclic group having an (nax0+1)-valent aromaticity, which may have a substituent, Wax0 may form a condensed ring with W, and nax0 represents an integer of 1 to 3

公开(公告)号：US20240360069A1

公开(公告)日：2024-10-31

申请号：US18635874

申请日：2024-04-15

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Yutaro OTOMO ,  Jun Hatakeyama ,  Tomomi Watanabe ,  Tomohiro Kobayashi

IPC: C07C69/76 ,  C07C25/18 ,  C07C381/12 ,  C07D333/76 ,  C08F220/18 ,  C08F220/22 ,  G03F7/038 ,  G03F7/039

CPC classification number: C07C69/76 ,  C07C25/18 ,  C07C381/12 ,  C07D333/76 ,  C08F220/1806 ,  C08F220/1807 ,  C08F220/22 ,  G03F7/038 ,  G03F7/039

Abstract: The present invention is a monomer represented by the following general formula (a)-1M or (a)-2M. This provides: a resist material having higher sensitivity and higher resolution than conventional positive resist materials, small edge roughness and size variation, and excellent pattern profile after exposure; a monomer to be an ingredient for the resist material; a resist composition containing the resist material; and a patterning process.

公开(公告)号：US20240302742A1

公开(公告)日：2024-09-12

申请号：US18527056

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Hwan Park ,  Sungwon Choi ,  Yoonhyun Kwak ,  Jeong Ho Mun ,  Juhyeon Park ,  Songse Yi ,  Hogeun Lee

IPC: G03F7/038 ,  C08F212/14 ,  C08F220/18 ,  C08F230/08 ,  H01L21/027

CPC classification number: G03F7/038 ,  C08F212/30 ,  C08F220/1807 ,  C08F230/08 ,  H01L21/0275

Abstract: A photoresist composition includes a nonionic non-chemically amplified photoresist composition including a photosensitive polymer that includes a first repeating unit having a polarity inversion group and a second repeating unit having a sensitizing group. A method of manufacturing an integrated circuit device includes forming a photoresist film on a feature layer by using the photoresist composition, exposing a first area, which is a portion of the photoresist film, to generate secondary electron from the second repeating unit in the first area and changing a polarity of the first repeating unit by using the secondary electrons in the first area to invert a polarity of the first area, removing a non-exposed area of the photoresist film by using a developer to form a photoresist pattern including the first area, and processing the feature layer by using the photoresist pattern.