公开(公告)号：US20240034908A1

公开(公告)日：2024-02-01

申请号：US18380228

申请日：2023-10-16

Applicant: ADMATECHS CO., LTD.

Inventor： Yusuke TOMIOKA ,  Tempo NAKAMURA

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a ferrule polishing material suitable for polishing a ferrule. A ferrule polishing material of the present invention solving the above object includes a binder formed from a resin material and abrasive grains dispersed in the binder. The resin material is formed from an epoxy resin. The abrasive grains are contained in an amount of not less than 80% and not greater than 91% with respect to the sum of masses of the abrasive grains and the binder, include small-diameter particles being particles having a particle diameter of not greater than 100 nm, the small-diameter particles being present in an amount of not less than 62.5% and not greater than 80% with respect to the mass of the abrasive grains, and are formed from silica.

公开(公告)号：US11884859B2

公开(公告)日：2024-01-30

申请号：US17377981

申请日：2021-07-16

Applicant: Versum Materials US, LLC

Inventor： Matthias Stender ,  Agnes Derecskei ,  Bradley J. Brennan

IPC: C09K13/06 ,  C09G1/02 ,  C09K13/00 ,  H01L21/321

CPC classification number: C09K13/06 ,  C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

公开(公告)号：US20230392043A1

公开(公告)日：2023-12-07

申请号：US18246771

申请日：2021-09-15

Applicant: SHOWA DENKO MATERIALS CO., LTD.

Inventor： Shigeki KUBOTA ,  Tomohiro IWANO ,  Satoshi FURUKAWA ,  Koichi KAGESAWA ,  Atsuko UEDA

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/784

CPC classification number: C09G1/02 ,  H01L21/784 ,  H01L21/31053 ,  H01L21/304

Abstract: A slurry containing: abrasive grains; a compound X; and water, in which the abrasive grains contain cerium oxide, and a hydrogen bond term dH in Hansen solubility parameters of the compound X is 15.0 MPa1/2 or more. A polishing method including polishing a surface to be polished by using this slurry.

公开(公告)号：US20230364732A1

公开(公告)日：2023-11-16

申请号：US18029059

申请日：2021-09-17

Applicant: FUJIMI INCORPORATED

Inventor： SACHIKO HIRAKO ,  NAOTO NOGUCHI

IPC: B24B37/04 ,  B08B1/00 ,  B08B3/08 ,  B08B3/04 ,  C09G1/02 ,  C11D11/00 ,  C11D1/29 ,  C11D1/72 ,  C11D1/62

CPC classification number: B24B37/044 ,  B08B1/001 ,  B08B3/08 ,  B08B3/048 ,  C09G1/02 ,  C11D11/0047 ,  C11D1/29 ,  C11D1/721 ,  C11D1/62

Abstract: Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.

公开(公告)号：US11795346B2

公开(公告)日：2023-10-24

申请号：US16958640

申请日：2018-12-21

Applicant: KAO CORPORATION

Inventor： Yohei Uchida

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31053

Abstract: A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.

公开(公告)号：US20230332017A1

公开(公告)日：2023-10-19

申请号：US18297260

申请日：2023-04-07

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Kangsik MYUNG ,  Han Teo PARK ,  Deok Su HAN ,  Yongsoo CHOI

IPC: H01L21/768 ,  C09G1/02

CPC classification number: C09G1/02 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76898

Abstract: A composition for semiconductor processing includes abrasive particles, and a dishing control additive, comprising a first dishing control additive and a second dishing control additive. The first dishing control additive includes a compound having a betaine group and a salicylic group or a derivative thereof, and the second dishing control additive includes an azole-based compound. The first dishing control additive includes 0.07 parts by weight or more based on 100 parts by weight of the abrasive particles, and the second dishing control additive includes 0.13 parts by weight or less based on 100 parts by weight of the abrasive particles.

公开(公告)号：US20230332014A1

公开(公告)日：2023-10-19

申请号：US18043451

申请日：2021-08-31

Applicant: SK enpulse Co., Ltd.

Inventor： Han Teo PARK ,  Deok Su HAN ,  Jang Kuk KWON ,  Seung Chul HONG

IPC: H01L21/3105 ,  C09G1/02 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/31051

Abstract: The present invention relates to a semiconductor process polishing composition and a semiconductor device manufacturing method in which the polishing composition is applied, and can provide a preparation method applied to a CMP process for an amorphous carbon layer, and thus exhibits a high polishing rate, prevents, during a CMP process, the re-adsorption of carbon residue on a semiconductor substrate and the contamination of a polishing pad, and stabilizes an accelerator in the polishing composition so that the storage stability thereof is excellent. In addition, provided is a semiconductor device manufacturing method in which the semiconductor process polishing composition is applied.

公开(公告)号：US11791164B2

公开(公告)日：2023-10-17

申请号：US15129838

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Takayuki Matsushita ,  Tomoki Yamasaki

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/3212 ,  C09G1/02 ,  H01L21/02024 ,  H01L21/31053

Abstract: The present invention relates to a polishing composition including water and silica, wherein the silica has a BET specific surface area of 30 m2/g or more and an NMR specific surface area of 10 m2/g or more, and a polishing method using the polishing composition. The polishing composition of the present invention adopts silica having the BET specific surface area falling within the above-described range, and additionally having the NMR specific surface area falling within a specific range, and consequently attains a high polishing rate, and can maintain the polishing rate even when used for a long time.

公开(公告)号：US11781039B2

公开(公告)日：2023-10-10

申请号：US16473346

申请日：2017-12-22

Applicant: FUJIMI INCORPORATED

Inventor： Tomoaki Ishibashi ,  Hiroki Kon

IPC: C01G1/02 ,  B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409 ,  H01L21/30625

Abstract: Solutions are disclosed for preventing the settling of an abrasive, while maintaining the polishing performance of a polishing composition. Solutions are disclosed for improving the redispersibility of an abrasive while maintaining the polishing performance. Polishing compositions for use in polishing a semiconductor substrate according to the present disclosure include an abrasive, a layered compound, and a dispersion medium.

公开(公告)号：US20230312981A1

公开(公告)日：2023-10-05

申请号：US18119460

申请日：2023-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Yuki OZEKI ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  C09K3/1409 ,  B24B37/044

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.