Ion implantation ion source, system and method
    21.
    发明授权
    Ion implantation ion source, system and method 失效
    离子注入离子源,系统和方法

    公开(公告)号:US07479643B2

    公开(公告)日:2009-01-20

    申请号:US11174107

    申请日:2005-07-01

    Abstract: The ionization chamber is defined by a removable block disposed in heat transfer relationship to a temperature controlled mounting block, preferably the removable block comprised of graphite, silicon carbide or aluminum. The ion source includes a mounting flange for joining the ion source to the housing of an ion implanter, the ionization chamber being located on the inside of the mounting flange and the vaporizer being removably mounted to the exterior of the mounting flange via at least one isolation valve which is separable from the mounting flange with the vaporizer, enabling the vaporizer charge volume to be isolated by the valve in closed position during handling, preferably there being two isolation valve in series, one unified with and transportable with a removed vaporizer unit, and one constructed to remain with and isolate the remainder of the ion source from the atmosphere. In certain preferred embodiments, two such vaporizers are provided, enabling one to be absent, while being charged or serviced, while the other operates, or enabling two different materials to be vaporized without maintenance of the ion source, or enabling additional quantities of the same materials to be present to enable a protracted implant run.

    Abstract translation: 电离室由与温度控制的安装块的热传递关系设置的可移除的块限定,优选地由石墨,碳化硅或铝组成的可移除块。 离子源包括用于将离子源连接到离子注入机的壳体的安装凸缘,电离室位于安装凸缘的内侧,并且蒸发器通过至少一个隔离件可拆卸地安装到安装凸缘的外部 阀,其与安装法兰与蒸发器分离,使得蒸发器充气体积在处理期间由阀处于闭合位置隔离,优选地具有两个串联的隔离阀,一个与已移除的蒸发器单元统一并且可移除的隔离阀,以及 一个被构造为留下离子源的剩余部分并与之隔离。 在某些优选实施例中,提供了两个这样的蒸发器,使得一个在被充电或维修的同时被放置,而另一个操作时,或者使得两个不同的材料在不维护离子源的情况下蒸发,或使得能够附加数量相同 存在的材料能够延长植入物运行。

    Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device
    22.
    发明申请
    Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device 失效
    离子掺杂装置,离子掺杂法,半导体装置及其制造方法

    公开(公告)号:US20090014725A1

    公开(公告)日:2009-01-15

    申请号:US10588164

    申请日:2005-02-01

    Applicant: Ken Nakanishi

    Inventor: Ken Nakanishi

    Abstract: An ion doping apparatus includes: a chamber 11; a discharge section 13 for discharging a gaseous content from within the chamber 11; an ion source 12 being provided in the chamber 11 and including an inlet 14 through which to introduce a gas containing an element to be used for doping, the ion source 12 decomposing the gas introduced through the inlet 14 to generate ions containing the element to be used for doping; an acceleration section 23 for pulling out from the ion source 12 the ions generated at the ion source 12 and accelerating the ions toward a target object held in the chamber; and a beam current meter 26 for measuring a beam current caused by the accelerated ions. The beam current is measured by the beam current meter 26 a plurality of times, and if a result of the measurements indicates a stability of the beam current, the ion doping apparatus automatically begins to implant into the target object the ions containing the element to be used for doping. Thus, an ion doping apparatus having excellent doping amount controllability is provided.

    Abstract translation: 离子掺杂装置包括:室11; 用于从室11内排出气态物质的排出部13; 离子源12设置在腔室11中并且包括入口14,通过该入口14引入包含用于掺杂的元素的气体,离子源12分解通过入口14引入的气体以产生含有元素的离子 用于掺杂; 用于从离子源12离开在离子源12处产生的离子并将离子加速到保持在腔室中的目标物体的加速部分23; 以及用于测量由加速离子引起的束电流的光束电流计26。 束电流由波束电流计26测量多次,如果测量结果表明射束电流的稳定性,则离子掺杂装置自动开始向目标物体中注入含有元素的离子 用于掺杂。 因此,提供了具有优异的掺杂量可控性的离子掺杂装置。

    Source Of Generating Multicharged Ions And Charged Particle Beam Apparatus Using Such Ion Generating Source
    23.
    发明申请
    Source Of Generating Multicharged Ions And Charged Particle Beam Apparatus Using Such Ion Generating Source 失效
    使用这种离子发生源产生多重放电离子和带电粒子束装置的来源

    公开(公告)号:US20080087842A1

    公开(公告)日:2008-04-17

    申请号:US11576945

    申请日:2005-04-08

    Abstract: A multicharged ions generating source that is easy to manufacture, excellent in controllability and maintainability, high in degree of ionization and large in beam intensity and a charged particle beam apparatus using the same are disclosed. The multicharged ions generating source includes an ion source electrode (3) comprising an electron source (4), a drift tube (5) that constitutes an ion trapping region and a collector (6), a superconducting magnet (11) for ion entrapment, an ion infeed means (20, 22), a first vacuum chamber (2) receiving the ion source electrode (3), a second vacuum chamber (10) receiving the superconducting magnet (11), and a vacuum pumping unit (15, 16) provided for each of the first and second vacuum chambers. The first and the second vacuum chambers (2) and (10) are made removable from each other, and only the ion source electrode (3) to be held at extremely high vacuum can be baked for degassing.

    Abstract translation: 公开了易于制造的多电荷离子产生源,可控性和可维护性优异,电离度高和束强度大的带电粒子束装置。 多电荷离子产生源包括离子源电极(3),其包括电子源(4),构成离子捕获区域的漂移管(5)和集电体(6),用于离子俘获的超导磁体(11) 离子馈入装置(20,22),接收离子源极(3)的第一真空室(2),接收超导磁体(11)的第二真空室(10)和真空泵送单元 )设置在第一和第二真空室中。 第一和第二真空室(2)和(10)可以相互脱离,只能保持在极高真空的离子源电极(3)进行脱气。

    Dual mode ion source for ion implantation
    24.
    发明申请
    Dual mode ion source for ion implantation 审中-公开
    用于离子注入的双模离子源

    公开(公告)号:US20080042580A1

    公开(公告)日:2008-02-21

    申请号:US11648366

    申请日:2006-12-29

    Applicant: Thomas Horsky

    Inventor: Thomas Horsky

    Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+′ or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

    Abstract translation: 公开了一种离子源,用于提供由离子簇组成的一系列离子束,例如B 2 H 2,H 2,SUP 2 +,/ B 2, > 5 + ,B 或B 1,B 3,B 3,...,...,..., 或者单体离子,例如Ge +,Sb +,Sb +,SO 3 + 为了使集群植入物和单体植入物进入硅衬底以用于制造CMOS器件,以及 以高生产力这样做。 离子束的范围由根据本发明的通用离子源产生,其被配置为以两种离散模式操作:电子冲击模式,其有效地产生离子簇,以及电弧放电模式,其有效地产生单体离子 。

    Beam plasma source
    25.
    发明授权
    Beam plasma source 有权
    光束等离子体源

    公开(公告)号:US07327089B2

    公开(公告)日:2008-02-05

    申请号:US10528386

    申请日:2003-09-19

    Inventor: John E. Madocks

    Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

    Abstract translation: 一种等离子体源,其包括具有第一宽度的排出腔,其中所述排出腔包括顶部,壁部分和设置在顶部上并从其向外延伸的喷嘴,其中所述喷嘴形成为包括延伸穿过的孔 顶部并进入排出腔,其中孔具有第二宽度,其中第二宽度小于第一宽度。 等离子体源还包括电源,设置在放电腔中的用于在其中引入可电离气体的导管和连接到电源的至少一个阴极,其中阴极能够支撑至少一个磁控管放电区域 放电腔。 等离子体源还包括邻近壁部设置的多个磁体,其中多个磁体在放电腔内形成零磁场点。

    Ion source with external RF antenna
    26.
    发明授权
    Ion source with external RF antenna 失效
    带外部射频天线的离子源

    公开(公告)号:US06975072B2

    公开(公告)日:2005-12-13

    申请号:US10443575

    申请日:2003-05-22

    CPC classification number: H01J27/18 H01J2237/0815 H05H1/46

    Abstract: A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source.

    Abstract translation: 射频(RF)驱动的等离子体离子源具有外部RF天线,即RF天线位于等离子体发生室的外部而不是内部。 RF天线通常由涂覆有绝缘体的小直径金属管形成。 外部RF天线组件用于将外部RF天线安装到离子源。 RF天线管缠绕在外部RF天线组件上以形成线圈。 外部RF天线组件由材料形成。 石英,其基本上对RF波是透明的。 外部RF天线组件附接并形成等离子体源室的一部分,使得由RF天线发射的RF波进入等离子体室的内部并电离其中所含的气体。 等离子体离子源通常是多尖点离子源。

    Ion source with external RF antenna
    28.
    发明申请
    Ion source with external RF antenna 失效
    带外部射频天线的离子源

    公开(公告)号:US20030218430A1

    公开(公告)日:2003-11-27

    申请号:US10443575

    申请日:2003-05-22

    CPC classification number: H01J27/18 H01J2237/0815 H05H1/46

    Abstract: A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. A flange is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the flange to form a coil. The flange is formed of a material, e.g. quartz, that is essentially transparent to the RF waves. The flange is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source.

    Abstract translation: 射频(RF)驱动的等离子体离子源具有外部RF天线,即RF天线位于等离子体发生室的外部而不是内部。 RF天线通常由涂覆有绝缘体的小直径金属管形成。 使用法兰将外部RF天线安装到离子源。 RF天线管缠绕在凸缘上以形成线圈。 凸缘由材料形成,例如 石英,其基本上对RF波是透明的。 凸缘连接并形成等离子体源室的一部分,使得由RF天线发射的RF波进入等离子体室的内部并电离其中所含的气体。 等离子体离子源通常是多尖点离子源。

    Ion source and coaxial inductive coupler for ion implantation system
    29.
    发明申请
    Ion source and coaxial inductive coupler for ion implantation system 失效
    用于离子注入系统的离子源和同轴电感耦合器

    公开(公告)号:US20030205680A1

    公开(公告)日:2003-11-06

    申请号:US10209397

    申请日:2002-07-31

    Abstract: An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.

    Abstract translation: 公开了一种具有用于提供用于离子注入系统的带状离子束的细长狭缝的离子源。 源包括用于在圆柱形源壳体内等离子体的RF激发的同轴电感耦合天线,以及设置在壳体内的周向磁体,用于产生用于等离子体限制的方位多点的磁场。 还公开了一种用于壳体内部的衬垫,其在等离子体和外部壳体壁之间提供热障碍,以便减轻或减少等离子体限制室内的冷凝。

    Method of producing recording media having protective overcoats of highly tetrahedral amorphous carbon
    30.
    发明授权
    Method of producing recording media having protective overcoats of highly tetrahedral amorphous carbon 有权
    制备具有高四面体无定形碳的保护性外涂层的记录介质的方法

    公开(公告)号:US06544627B1

    公开(公告)日:2003-04-08

    申请号:US09648341

    申请日:2000-08-25

    Abstract: The invention provides systems and methods for the deposition of an improved diamond-like carbon material, particularly for the production of magnetic recording media. The diamond-like carbon material of the present invention is highly tetrahedral, that is, it features a large number of the sp3 carbon-carbon bonds which are found within a diamond crystal lattice. The material is also amorphous, providing a combination of short-range order with long-range disorder, and can be deposited as films which are ultrasmooth and continuous at thicknesses substantially lower than known amorphous carbon coating materials. The carbon protective coatings of the present invention will often be hydrogenated. In a preferred method for depositing of these materials, capacitive coupling forms a highly uniform, selectively energized stream of ions from a dense, inductively ionized plasma. Such inductive ionization is enhanced by a relatively slow moving (or “quasi-static”) magnetic field, which promotes resonant ionization and ion beam homogenization.

    Abstract translation: 本发明提供用于沉积改进的类金刚石碳材料的系统和方法,特别是用于生产磁记录介质。 本发明的类金刚石碳材料是高度四面体的,即具有大量在金刚石晶格内发现的sp 3碳 - 碳键。 该材料也是无定形的,提供短距离顺序与远程障碍的组合,并且可以以基本上低于已知无定形碳涂层材料的厚度超薄且连续的膜沉积。 本发明的碳保护涂层通常将被氢化。 在用于沉积这些材料的优选方法中,电容耦合形成来自致密的感应电离等离子体的高度均匀的选择性激励的离子流。 这种感应电离通过相对较慢的移动(或“准静态”)磁场增强,这促进了共振电离和离子束均匀化。

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