公开(公告)号：US20150307995A1

公开(公告)日：2015-10-29

申请号：US14265001

申请日：2014-04-29

申请人： Lam Research Corporation

发明人： Eugenijus NORKUS ,  Aldona JAGMINIENE ,  Ina STANKEVICIENE ,  Aniruddha JOI ,  Yezdi DORDI

IPC分类号： C23C18/52 ,  H01L21/288

CPC分类号： C23C18/52 ,  C23C18/44 ,  H01L21/288 ,  H01L21/76874

摘要： A solution for electroless deposition of palladium is provided. A reducing agent of Co2+ or Ti3+ ions is provided to the solution. Pd2+ ions are provided to the solution.

摘要翻译： 提供了钯的无电沉积溶液。 向溶液中提供Co2 +或Ti3 +离子的还原剂。 向溶液中提供Pd2 +离子。

公开(公告)号：US20150303103A1

公开(公告)日：2015-10-22

申请号：US14343509

申请日：2012-08-08

申请人： Shoso Shinguhara ,  Fumihiro Inoue ,  Hiroshi Miyake ,  Ryohei Arima ,  Mitsuaki Iwashita ,  Takashi Tanaka

发明人： Shoso Shinguhara ,  Fumihiro Inoue ,  Hiroshi Miyake ,  Ryohei Arima ,  Mitsuaki Iwashita ,  Takashi Tanaka

IPC分类号： H01L21/768 ,  C23C18/16

CPC分类号： H01L21/76874 ,  C23C18/1608 ,  C23C18/1619 ,  C23C18/1806 ,  C23C18/1831 ,  H01L21/288 ,  H01L21/76898

摘要： A catalyst adsorption method can sufficiently adsorb a catalyst to a lower portion of a recess formed in a substrate. A substrate 20 in which a recess 22 is formed is prepared. Then, a catalyst 23 formed of nanoparticles coated with a dispersant is adsorbed to a surface of the substrate 20 by bringing the substrate 20 into contact with a catalyst solution 12 containing the catalyst by a catalyst adsorption device 10. At that time, a high frequency vibration is applied to the catalyst solution 12.

摘要翻译： 催化剂吸附方法可以将催化剂充分地吸附到形成在基板中的凹部的下部。 准备形成有凹部22的基板20。 然后，通过使催化剂吸附装置10使基板20与含有催化剂的催化剂溶液12接触，将由分散剂涂布的纳米粒子形成的催化剂23吸附在基板20的表面。此时， 对催化剂溶液12施加振动。

公开(公告)号：US20150243555A1

公开(公告)日：2015-08-27

申请号：US14706764

申请日：2015-05-07

申请人： FUJITSU LIMITED

发明人： Tsuyoshi Kanki ,  Yoshihiro Nakata ,  Yasushi Kobayashi

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

摘要： After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

摘要翻译： 在基板上形成铜互连之后，通过进行酸清洗来激活铜互连的表面。 此后，将基板浸入BTA（苯并三唑）水溶液中以形成覆盖铜互连表面的保护膜。 此时，在铜互连表面的晶界部分中形成Cu-N-R键（R为有机基团）。 此后，通过进行碱性清洗除去保护膜。 即使在保护膜被去除之后，Cu-N-R键也保留在铜互连表面的晶界部分中。 随后，对铜互连的表面进行激活处理，然后通过用NiP或CoWP对铜互连的表面进行无电镀来形成阻挡层。

公开(公告)号：US20150243553A1

公开(公告)日：2015-08-27

申请号：US14627545

申请日：2015-02-20

申请人： Mitsubishi Gas Chemical Company, Inc.

发明人： Keiichi TANAKA ,  Priangga Perdana Putra

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/1879 ,  C23C18/34 ,  C23C18/40 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53238 ,  H01L25/0655 ,  H01L2221/1084 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for forming a through-via, including the steps of (1) forming an alloy film as a diffusion-preventive layer that prevents diffusion of copper, in an area on a side wall of a hole formed in a substrate that extends from an entrance of the hole to a central part of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least cobalt ion or nickel ion, a complexing agent, a reductant, and a pH adjusting agent; (2) forming an alloy film as a diffusion-preventive layer in an area on the side wall of the hole formed in the substrate that extends from the central part of the hole to a bottom of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least the cobalt ion or the nickel ion, the complexing agent, the reductant, the pH adjusting agent, and an amino group-containing polymer; and (3) stacking a copper seed layer on the diffusion-preventive layer formed in each of steps (1) and (2) by use of an electroless copper plating solution.

摘要翻译： 本发明提供一种形成通孔的方法，包括以下步骤：（1）在形成在基板中的孔的侧壁上的区域中形成合金膜作为阻止扩散的防扩散层 通过使用至少含有钴离子或镍离子的无电镀钴溶液或化学镀镍溶液，络合剂，还原剂和pH调节剂，从孔的入口延伸到孔的中心部分 代理人 （2）通过使用无电镀钴电镀，在从孔的中心部分延伸到孔的底部的形成在基板上的孔的侧壁上形成作为防扩散层的合金膜 溶液或至少含有钴离子或镍离子的化学镀镍溶液，络合剂，还原剂，pH调节剂和含氨基的聚合物; 和（3）通过使用化学镀铜溶液在步骤（1）和（2）中形成的扩散防止层上堆叠铜籽晶层。

公开(公告)号：US09112005B2

公开(公告)日：2015-08-18

申请号：US13962856

申请日：2013-08-08

申请人： President and Fellows of Harvard College

发明人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

IPC分类号： C23C16/14 ,  H01L21/768 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  H01L21/285 ,  H01L23/532

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

摘要翻译： 提供了一种用于集成电路中铜线集成电路的互连结构及其制造方法。 含有Mn，Cr或V的层形成了阻碍铜从电线中扩散的阻挡层，从而保护绝缘体免于过早击穿，并保护晶体管免受铜的退化。 含Mn，Cr或V的层还促进了铜和绝缘体之间的强粘附，从而在制造和使用过程中保持了器件的机械完整性，并且在使用器件期间防止铜的电迁移失效，并保护 铜从其周围的氧气或水中腐蚀。 在形成这样的集成电路中，本发明的某些实施例提供了在铜表面上选择性地沉积Mn，Cr，V或Co的方法，同时减少或甚至防止在绝缘体表面上沉积Mn，Cr，V或Co。 还提供了使用含有Mn，Cr或V的前体和含碘或溴的前体的铜的催化沉积。

公开(公告)号：US08673766B2

公开(公告)日：2014-03-18

申请号：US13476692

申请日：2012-05-21

申请人： Sean X. Lin ,  Ming He ,  Xunyuan Zhang ,  Larry Zhao

发明人： Sean X. Lin ,  Ming He ,  Xunyuan Zhang ,  Larry Zhao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76874 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76879

摘要： Disclosed herein are various methods of forming copper-based conductive structures on integrated circuit devices. In one example, the method includes forming a trench/via in a layer of insulating material, performing a deposition process to form an as-deposited copper-based seed layer above the layer of insulating material in the trench/via, wherein the copper-based seed layer has a first portion that is positioned above a bottom of the trench/via that is thicker than second portions of the copper seed layer that are positioned above sidewalls of the trench/via, performing an etching process on the as-deposited copper-based seed layer to substantially remove portions of the second portions of the as-deposited copper-based seed layer and performing an electroless deposition process to fill the trench/via with a copper-based material.

摘要翻译： 这里公开了在集成电路器件上形成铜基导电结构的各种方法。 在一个示例中，该方法包括在绝缘材料层中形成沟槽/通孔，执行沉积工艺以在沟槽/通孔中的绝缘材料层上方形成沉积的基于铜的种子层，其中铜 - 基于晶种的层具有位于沟槽/通孔的底部之上的第一部分，其比位于沟槽/通孔侧壁上方的铜籽晶层的第二部分更厚，对沉积的铜进行蚀刻工艺 基本种子层，以基本上去除沉积的铜基种子层的第二部分的部分，并执行无电沉积工艺以用铜基材料填充沟槽/通孔。

公开(公告)号：US08569165B2

公开(公告)日：2013-10-29

申请号：US12908323

申请日：2010-10-20

申请人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

发明人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

IPC分类号： H01L21/4763 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

公开(公告)号：US20130154087A1

公开(公告)日：2013-06-20

申请号：US13526216

申请日：2012-06-18

申请人： Yasuhito YOSHIMIZU ,  Satoshi Wakatsuki ,  Hisashi Okuchi ,  Atsuko Sakata ,  Hiroshi Tomita

发明人： Yasuhito YOSHIMIZU ,  Satoshi Wakatsuki ,  Hisashi Okuchi ,  Atsuko Sakata ,  Hiroshi Tomita

IPC分类号： H01L21/768 ,  H01L23/535

CPC分类号： C23C18/1608 ,  C23C18/1893 ,  C23C18/32 ,  H01L21/4846 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76885 ,  H01L28/91

摘要： According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.

摘要翻译： 根据一个实施例，用于形成互连图案的方法包括形成绝缘图案，形成自组装膜并形成导电层。 绝缘图案在矩阵的主表面上具有侧表面。 自组装膜与绝缘图案的侧面上的绝缘图案的材料具有亲和性。 形成导电层包括在自组装膜的侧表面上沉积导电材料。

公开(公告)号：US20120315756A1

公开(公告)日：2012-12-13

申请号：US13421434

申请日：2012-03-15

申请人： Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert S. Chu ,  Frederick C. Wu ,  Kavita Shah

发明人： Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert S. Chu ,  Frederick C. Wu ,  Kavita Shah

IPC分类号： H01L21/768

CPC分类号： C23C18/40 ,  C23C18/1608 ,  C23C18/165 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

公开(公告)号：US08283051B2

公开(公告)日：2012-10-09

申请号：US12737399

申请日：2009-07-13

申请人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yasuhiro Yamakoshi ,  Shinichiro Senda

发明人： Junichi Ito ,  Atsushi Yabe ,  Junnosuke Sekiguchi ,  Toru Imori ,  Yasuhiro Yamakoshi ,  Shinichiro Senda

IPC分类号： B32B15/08

CPC分类号： C23C18/54 ,  C23C18/1637 ,  C23C18/165 ,  C25D3/38 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  Y10T428/12431 ,  Y10T428/12438 ,  Y10T428/12493 ,  Y10T428/12569 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12854 ,  Y10T428/12903

摘要： A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.

摘要翻译： 由其上形成有用于防止铜扩散的合金阻挡薄膜的基板制成的电镀产品包含金属B，该金属B具有与铜相关的阻挡性能，并且能够与无电镀铜溶液中包含的铜离子进行置换镀覆，并且金属A 在pH为10以上的化学镀铜溶液中倾向于具有比金属B更少的离子化; 用于防止铜扩散的合金阻挡薄膜具有其中金属A构成原子的15至35原子％的组成; 并且通过使用pH为10以上的化学镀铜溶液进行化学镀，在合金阻挡薄膜上形成铜薄膜。