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公开(公告)号：US12063469B2
公开(公告)日：2024-08-13
申请号：US17647653
申请日：2022-01-11
CPC分类号： H04R1/2807 , B81B3/0078 , H04R7/06 , H04R7/16 , H04R19/04 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , H04R2201/003
摘要： A MicroElectroMechanical (MEMS) device includes a suspended electrode structure anchored to a substrate, the MEMS device having a MEMS resonance mode, and a Tuned Mass Damping (TMD) structure, wherein a portion of the suspended electrode structure forms a TMD structure having a TMD spring element and a TMD mass element, for providing a TMD resonance mode counteracting the MEMS resonance mode.
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22.发明授权公开(公告)号：US12061334B2
公开(公告)日：2024-08-13
申请号：US17231898
申请日：2021-04-15
申请人： Raytheon Company
发明人： David J. Knapp , Gerald P. Uyeno , Sean D. Keller , Benn H. Gleason , Eric Rogala , Mark K. Lange , Garret A. Odom , Craig O. Shott , Zachary D. Barker
CPC分类号： G02B26/105 , B81B3/0083 , G02B26/0833 , B81B2201/042 , B81B2203/058 , B81B2207/053
摘要： An optical scanning system includes one or more Micro-Electro-Mechanical System (MEMS) Micro-Mirror Arrays (MMAs) used to scan a field-of-view (FOV) over a field-of-regard (FOR). The MEMS MMA is configured such that optical radiation from each point in the FOV does not land on or originate from out-of-phase mirror segments and a diffraction limited resolution of the optical system is limited by the size of the entrance pupil and not by the size of individual mirrors.
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公开(公告)号：US20240262678A1
公开(公告)日：2024-08-08
申请号：US18021582
申请日：2022-05-27
发明人： Jingwen GUO , Jianxing LIU , Jianyun ZHAO , Biqi LI
CPC分类号： B81B3/0008 , B81C1/00984 , B81B2201/01 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0323 , B81B2203/04 , B81B2207/99 , B81C2201/0109 , B81C2201/0132
摘要： The present disclosure provides an MEMS device, a method for manufacturing an MEMS device and an electronic device, and belongs to the field of Micro-Electro-Mechanical System technology. The MEMS device includes: a first dielectric substrate and a first component on the first dielectric substrate; the first component and the first dielectric substrate enclose a movable space; the first component has a first portion corresponding to the movable space; the first portion has at least one first opening, and at least one protruding structure is on a side of the first portion close to the first dielectric substrate; orthographic projections of the at least one protruding structure and the at least one first opening on the first dielectric substrate do not overlap with each other, and a thickness of each protruding structure is smaller than a height of the movable space.
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公开(公告)号：US12055705B2
公开(公告)日：2024-08-06
申请号：US17283835
申请日：2019-10-07
发明人： Jochen Schenk , Michael Kleiser , Jürgen Nies , Frank Selbmann , Felix Müller
IPC分类号： G02B26/08 , B81B3/00 , G01S7/481 , G01S17/931
CPC分类号： G02B26/0841 , B81B3/0018 , B81B2201/045 , G01S7/4817 , G01S17/931
摘要： A method for controlling a drive apparatus (20) of a micro-oscillation mirror (16), a control device (28) and a deflector mirror apparatus (14) are described. The drive apparatus (20) has at least two comb drives (22a, 22b) which are arranged on different radial sides of a pivoting axis (18) of the micro-oscillation mirror (16). In the method, at least two actuation signals AS1, AS2) are generated, and the at least two comb drives (22a, 22b) are therefore actuated at least temporarily in such a way that they drive the micro-oscillation mirror (16) in an oscillating fashion. At least one elongation signal (P1, P2), which characterizes the elongation (26) of the micro-oscillation mirror (16) is generated using at least one comb drive (22a, 22b). At least one of the actuation signals (AS1, AS2) is adapted to the oscillation of the micro-oscillation mirror (16) on the basis of at least one of the elongation signals (P1, P2), At least one of the comb drives (22a, 22b) is connected, by means of at least one switching apparatus (34), alternately to an actuation apparatus (32) for receiving at least one actuation signal (AS1, AS2) or to an elongation-detection apparatus (24) for generating at least one elongation signal (P1, P2).
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公开(公告)号：US12054382B2
公开(公告)日：2024-08-06
申请号：US18308950
申请日：2023-04-28
发明人： Hsi-Cheng Hsu , Kuo-Hao Lee , Jui-Chun Weng , Ching-Hsiang Hu , Ji-Hong Chiang , Lavanya Sanagavarapu , Chia-Yu Lin , Chia-Chun Hung , Jia-Syuan Li , Yu-Pei Chiang
CPC分类号： B81B3/0005 , B81C1/00968 , B81C2201/112 , B81C2201/115
摘要： A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.
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公开(公告)号：US20240247986A1
公开(公告)日：2024-07-25
申请号：US18597341
申请日：2024-03-06
申请人： NextInput, Inc.
CPC分类号： G01L1/18 , B81B3/0021 , B81C1/00595 , G01L1/26 , B81B2203/0127 , B81C2201/014
摘要： An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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27.发明公开公开(公告)号：US20240243672A1
公开(公告)日：2024-07-18
申请号：US18562630
申请日：2022-05-20
发明人： Thierry CÔTE , Patrice MINOTTI , Gilles BOURBON , Patrice LE MOAL
CPC分类号： H02N1/008 , B81B3/0051 , B81B2201/033 , B81B2201/035 , B81B2203/0136 , B81B2203/019 , B81B2203/0384
摘要： The invention relates to a microelectromechanical system (10) comprising a drive module (200) comprising:
a fixed drive portion (210),
a movable drive portion (220), and
a suspension (230),
the movable drive portion (220) being able to be moved relative to the fixed drive portion (210) in a first direction (A), as a result of an electrostatic force, which causes an elastic deformation of the suspension (230), and the movable drive portion (220) being able to be moved relative to the fixed drive portion (210) in a second direction (B), opposite to the first direction (A), as a result of an elastic return force generated by the suspension (230),
the actuator (11) also comprising a stop (24) limiting the movement of the first movable portion (220) in the second direction (B) so that the elastic force generated by the suspension (230) is not cancelled.-
公开(公告)号：US12038680B2
公开(公告)日：2024-07-16
申请号：US17309342
申请日：2019-11-14
发明人： Yusuke Ogawa
CPC分类号： G03B21/28 , G02B26/105 , G03B21/008 , B81B3/0018 , B81B2201/045
摘要： Provided is a technology for improving the resolution and the angle of view of an image projection device. The image projection device includes an optical waveguide element including at least one incident port on which a laser beam is incident and a plurality of emission ports from which the laser beam is emitted, and a scanning mirror that performs scanning with the laser beam emitted from the optical waveguide element, in which the laser beam with which the scanning mirror performs the scanning reaches a projection target. The image projection device further includes a hologram element that condenses the laser beam with which the scanning mirror performs the scanning on a vicinity of a pupil to allow the laser beam to reach a retina.
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公开(公告)号：US12038454B2
公开(公告)日：2024-07-16
申请号：US18056203
申请日：2022-11-16
IPC分类号： G01P15/03 , B81B3/00 , G01C19/5733 , G01P15/08 , G01P15/125 , G01P15/18
CPC分类号： G01P15/032 , B81B3/0018 , B81B3/0051 , G01C19/5733 , G01P15/0802 , G01P15/125 , G01P15/18 , B81B2201/0235
摘要： A MEMS inertial sensor includes a supporting structure and an inertial structure. The inertial structure includes at least one inertial mass, an elastic structure, and a stopper structure. The elastic structure is mechanically coupled to the inertial mass and to the supporting structure so as to enable a movement of the inertial mass in a direction parallel to a first direction, when the supporting structure is subjected to an acceleration parallel to the first direction. The stopper structure is fixed with respect to the supporting structure and includes at least one primary stopper element and one secondary stopper element. If the acceleration exceeds a first threshold value, the inertial mass abuts against the primary stopper element and subsequently rotates about an axis of rotation defined by the primary stopper element. If the acceleration exceeds a second threshold value, rotation of the inertial mass terminates when the inertial mass abuts against the secondary stopper element.
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30.发明授权公开(公告)号：US12037239B2
公开(公告)日：2024-07-16
申请号：US17206116
申请日：2021-03-18
IPC分类号： B81C1/00 , B06B1/06 , B81B3/00 , H10N30/06 , H10N30/074 , H10N30/093 , H10N30/87 , H10N39/00 , H10N30/853 , H10N30/88
CPC分类号： B81C1/00246 , B06B1/06 , B81B3/0021 , H10N30/06 , H10N30/074 , H10N30/875 , H10N39/00 , B81B2201/0271 , B81B2201/032 , B81B2207/015 , B81B2207/096 , B81B2207/115 , B81C2201/0105 , B81C2203/0735 , B81C2203/0771 , H10N30/093 , H10N30/853 , H10N30/883
摘要： A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.
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