公开(公告)号：US20190109009A1

公开(公告)日：2019-04-11

申请号：US15726222

申请日：2017-10-05

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  David Kurt de Roest

IPC: H01L21/285 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/3205 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  H01L21/48 ,  H01L21/768

CPC classification number: H01L21/28562 ,  C23C16/0209 ,  C23C16/04 ,  C23C16/047 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  H01L21/28229 ,  H01L21/30655 ,  H01L21/32051 ,  H01L21/4846 ,  H01L21/76879

Abstract: A method for selectively depositing a metallic film on a substrate comprising a first dielectric surface and a second metallic surface is disclosed. The method may include, exposing the substrate to a passivating agent, performing a surface treatment on the second metallic surface, and selectively depositing the metallic film on the first dielectric surface relative to the second metallic surface. Semiconductor device structures including a metallic film selectively deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20190103285A1

公开(公告)日：2019-04-04

申请号：US16143888

申请日：2018-09-27

Applicant: ASM IP HOLDING B.V.

Inventor： Antti Juhani Niskanen ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/306 ,  H01L21/02

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

公开(公告)号：US20190100837A1

公开(公告)日：2019-04-04

申请号：US16100855

申请日：2018-08-10

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/18 ,  C23C16/30 ,  C23C16/40 ,  C23C16/06 ,  C23C16/02 ,  H01L21/768 ,  H01L21/285 ,  C23C16/22 ,  C23C16/455

CPC classification number: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/18 ,  C23C16/22 ,  C23C16/30 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US10249577B2

公开(公告)日：2019-04-02

申请号：US15499647

申请日：2017-04-27

Applicant: ASM IP Holding B.V.

Inventor： Choong Man Lee ,  Yong Min Yoo ,  Young Jae Kim ,  Seung Ju Chun ,  Sun Ja Kim

IPC: H01L21/4763 ,  H01L23/00 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.

公开(公告)号：US10246777B2

公开(公告)日：2019-04-02

申请号：US15620454

申请日：2017-06-12

Applicant: ASM IP HOLDING B.V.

Inventor： Hiroshi Kondo

IPC: C23C16/00 ,  C23C16/458 ,  H01J37/32 ,  C23C16/455

Abstract: A heater block adapted to be installed in a plasma deposition or plasma etching apparatus that includes a showerhead and a reaction chamber, the heater block being adapted to be arranged in the reaction chamber to support a substrate and includes: at least one through-hole passing through the heater block, and on its upper face a plurality of surfaces separated from each other and defined by a continuous concavity; and the continuous concavity including: a plurality of main concaves or depressions, a plurality of concave channels connecting substantially every two adjacent main concaves or depressions, and a concave or depression, at the center of the heater block, of a different shape or size from the plurality of main concaves or depressions.

公开(公告)号：US20190096708A1

公开(公告)日：2019-03-28

申请号：US15719208

申请日：2017-09-28

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  H01L21/3065

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

公开(公告)号：US20190093221A1

公开(公告)日：2019-03-28

申请号：US16130798

申请日：2018-09-13

Applicant: ASM IP Holding B.V.

Inventor： Lucian Jdira ,  Herbert Terhorst ,  Naoto Tsuji ,  Yoshio Susa

IPC: C23C16/448 ,  C23C16/455

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

公开(公告)号：US20190086807A1

公开(公告)日：2019-03-21

申请号：US16137974

申请日：2018-09-21

Applicant: ASM IP Holding B.V.

Inventor： Krzysztof Kachel ,  David de Roest

IPC: G03F7/16 ,  C23C16/455

Abstract: The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material.

公开(公告)号：US10236177B1

公开(公告)日：2019-03-19

申请号：US15683701

申请日：2017-08-22

Applicant: ASM IP Holding B.V.

Inventor： David Kohen ,  Harald Benjamin Profijt

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/285 ,  H01L21/768 ,  H01L29/165 ,  H01L29/08 ,  H01L29/78 ,  H01L29/06 ,  H01L29/45 ,  H01L23/535 ,  C30B29/52 ,  C30B25/02 ,  C23C16/06

Abstract: A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.

公开(公告)号：US20190074172A1

公开(公告)日：2019-03-07

申请号：US15695147

申请日：2017-09-05

Applicant: ASM IP Holding B.V.

Inventor： Yoshio SUSA ,  Yuko KENGOYAMA ,  Taishi EBISUDANI

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/033 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

Abstract: Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.