公开(公告)号：US06767655B2

公开(公告)日：2004-07-27

申请号：US09931113

申请日：2001-08-16

申请人： Masayoshi Hiramoto ,  Nozomu Matukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Nozomu Matukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC分类号： G11B531

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/302 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1193

摘要： The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 &mgr;m2.

摘要翻译： 本发明提供一种垂直电流型磁阻元件。 该元件包括中间层和夹在中间层的一对磁性层，并且自由磁性层和钉扎磁性层中的至少一个是包括至少一个非磁性层的多层膜和夹持非磁性层的磁性层， 磁性层。 由电流垂直于膜流过的中间层的面积所限定的元件面积不大于1000μm2。

公开(公告)号：US6074768A

公开(公告)日：2000-06-13

申请号：US212721

申请日：1998-12-16

申请人： Yoshinori Matsunaga ,  Shuichi Fujino ,  Akihiro Odagawa ,  Youichi Enomoto

发明人： Yoshinori Matsunaga ,  Shuichi Fujino ,  Akihiro Odagawa ,  Youichi Enomoto

IPC分类号： C01G1/00 ,  C01G3/00 ,  C04B41/50 ,  C04B41/85 ,  C23C14/08 ,  C30B23/02 ,  C30B23/08 ,  C30B25/06 ,  C30B25/18 ,  C30B29/22 ,  H01L39/02 ,  H01L39/24 ,  B32B9/00 ,  B32B12/00

CPC分类号： C04B41/009 ,  C04B41/5074 ,  C04B41/85 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/742

摘要： A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.

摘要翻译： 形成具有不同晶轴取向的123型铜氧化物超导体薄膜的层叠体的制造方法，具有优异的超导性的123型薄铜氧化物超导体层的层叠体和约瑟夫逊结的配线。 氧化物超导体的c轴取向单晶薄膜，其Y：Ba：Cu原子比基本上为1:2:3，晶格常数为11.60埃，在20℃的温度下为11.70埃 在单晶衬底上形成氧分压为160Torr的DEG，并且根据溅射沉积方法在上述层叠膜上形成所述氧化物超导体的a轴取向单晶薄膜。

公开(公告)号：US5885937A

公开(公告)日：1999-03-23

申请号：US888657

申请日：1997-07-07

申请人： Hideaki Adachi ,  Masahiro Sakai ,  Akihiro Odagawa ,  Kentaro Setsune

发明人： Hideaki Adachi ,  Masahiro Sakai ,  Akihiro Odagawa ,  Kentaro Setsune

IPC分类号： H01L39/22

CPC分类号： H01L39/225

摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.

摘要翻译： 本发明提供了一种显示令人满意的约瑟夫逊效应的超导隧道结元件。 元素包括Bi基层状化合物如Bi2Sr2（Ca0.6Y0.4）Cu2O8，Bi2Sr2Cu2O6和Bi2Sr2CaCu2O8作为超导氧化物电极之间的阻挡层。 超导氧化物与Bi基化合物的结构匹配应该是好的。 使用一些种类的Cu基超导氧化物如YSr2Cu2.7Re0.3O7，Sr2CaCu2O6和（La0.9Sr0.1）2CuO4用于电极以获得可在高温下工作的约瑟夫逊元素。 当将包括诸如YBa2Cu3O7的Ba的超导氧化物用于电极时，在电极和势垒之间形成薄膜更好地防止Ba与阻挡层中的Bi反应。 包括该元件的超导装置具有各种用途，例如磁检测使用，通信使用和计算使用。

公开(公告)号：US20120205762A1

公开(公告)日：2012-08-16

申请号：US13454696

申请日：2012-04-24

申请人： Nozomu MATSUKAWA ,  Akihiro ODAGAWA ,  Akio MATSUSHITA

发明人： Nozomu MATSUKAWA ,  Akihiro ODAGAWA ,  Akio MATSUSHITA

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L43/10

摘要： The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

摘要翻译： 本发明的磁性隧道结装置包括第一铁磁层，第二铁磁层，形成在第一铁磁层和第二铁磁层之间的绝缘层。 绝缘层由添加氟的MgO构成。 绝缘层中的氟含量为0.00487at。 ％以上0.15080。 ％ 或更少。 该器件虽然包括MgO绝缘层，但是对于包括MgO绝缘层的常规器件，具有优异的磁阻性能。 氟含量优选为0.00487at。 ％以上0.05256。 ％ 或更少。

公开(公告)号：US20080048164A1

公开(公告)日：2008-02-28

申请号：US11774101

申请日：2007-07-06

申请人： Akihiro ODAGAWA

发明人： Akihiro ODAGAWA

IPC分类号： H01L29/02 ,  H01L21/00

CPC分类号： G11C13/0007 ,  G11C2213/51 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： An electro-resistance element that develops less leakage and fewer associated short-circuits even when an electro-resistance layer is made thinner, a method of manufacturing the same and an electro-resistance memory using the same are provided. The electro-resistance element includes a first electrode, a second electrode, an electro-resistance layer stacked between the first and the second electrodes and an insulating layer (a tunnel barrier layer). The tunnel barrier layer has a thickness in a range from 0.5 nm to 5 nm both inclusive. The electro-resistance layer is a layer having a plurality of states in which electric resistance values are different and being switchable between the states by applying a voltage or a current between the first and the second electrodes. The electro-resistance layer contains transition metal oxide as its main component.

摘要翻译： 即使当使电阻层变薄时，电阻元件也能产生更少的泄漏和更少的相关短路，提供其制造方法和使用该电阻元件的电阻存储器。 电阻元件包括第一电极，第二电极，堆叠在第一和第二电极之间的电阻层和绝缘层（隧道势垒层）。 隧道势垒层的厚度在0.5nm〜5nm的范围内。 电阻层是具有多个状态的层，其中电阻值不同，并且可以通过在第一和第二电极之间施加电压或电流在状态之间切换。 电阻层含有过渡金属氧化物作为其主要成分。

公开(公告)号：US07167387B2

公开(公告)日：2007-01-23

申请号：US11061920

申请日：2005-02-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/1675

摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.

摘要翻译： 本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。 本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

公开(公告)号：US07079361B2

公开(公告)日：2006-07-18

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， （X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种 ，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US07042686B2

公开(公告)日：2006-05-09

申请号：US10871165

申请日：2004-06-18

申请人： Masayoshi Hiramoto ,  Akihiro Odagawa ,  Nozomu Matukawa ,  Kenji Iijima ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Akihiro Odagawa ,  Nozomu Matukawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC分类号： G11B5/33 ,  G11B5/127 ,  H01L21/00

CPC分类号： H01L43/12 ,  H01L43/10 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： The present invention provides a magnetoresistive element that includes a pair of magnetic layers and an intermediate layer between the magnetic layers. The intermediate layer contains at least three elements selected from Groups 2 to 17, and the elements include at least one selected from the group consisting of F, O, N, C and B. According to the invention, a magnetoresistive element with high magnetoresistance change ratio and low resistance can be provided. The invention also provides a method for producing a magnetoresistive element. The method includes forming a precursor and forming at least one part of the intermediate layer from the precursor. The precursor is reacted with at least one reactive species selected from the group consisting of oxygen atoms, nitrogen atoms and carbon atoms in a reactive atmosphere containing the reactive species.

公开(公告)号：US07012790B2

公开(公告)日：2006-03-14

申请号：US10896795

申请日：2004-07-22

申请人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

发明人： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/11 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3925 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.

摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

公开(公告)号：US06954372B2

公开(公告)日：2005-10-11

申请号：US10250811

申请日：2002-01-18

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/66 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L29/66984

摘要： A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.

摘要翻译： 一种磁存储器件，包括磁阻元件，用于产生改变磁阻元件的电阻值的磁通的导线以及磁通通过的至少一个铁磁部件。 铁磁构件在磁通量通过磁阻元件的位置处形成磁隙。 在与磁隙平行的方向上测量的磁阻元件的长度小于或等于磁隙长度的两倍。 由铁磁部件中的磁通量追踪的路径的长度小于或等于1.0μm。 路径的长度也大于或等于铁磁构件的厚度的五倍和/或大于或等于铁磁构件沿导线方向除以五的长度。