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    Splashing oil lubrication type internal combustion engine
    31.
    发明授权
    Splashing oil lubrication type internal combustion engine 失效
    喷油润滑型内燃机

    公开(公告)号：US06691831B1

    公开(公告)日：2004-02-17

    申请号：US09672250

    申请日：2000-09-28

    Applicant: Akira Furuya

    Inventor： Akira Furuya

    IPC: F01M500

    CPC classification number: F01M11/0004 ,  F01M5/002 ,  F01M2011/0025

    Abstract: A plurality of heat receiving ribs are projected inwardly from the inner wall surfaces of a crankcase of a splashing oil lubrication type internal combustion engine. The heat receiving ribs extend in the same direction of a crankshaft so as to easily absorb heat from splashed engine oil. As a result, the temperature in the crankcase is reduced, thereby the lubrication characteristic of the engine oil can be maintained in good condition.

    Abstract translation: 多个受热肋从飞溅油润滑型内燃机的曲轴箱的内壁面向内突出。 受热肋沿曲轴的相同方向延伸，以便容易地从飞溅的发动机油吸收热量。 结果，曲轴箱中的温度降低，从而能够保持发动机油的润滑特性良好。

    Compound semiconductor device manufacturing method
    32.
    发明授权
    Compound semiconductor device manufacturing method 失效
    复合半导体器件的制造方法

    公开(公告)号：US06686217B2

    公开(公告)日：2004-02-03

    申请号：US10046217

    申请日：2002-01-16

    Applicant: Katsumi Sugiura ,  Chikashi Anayama ,  Akira Furuya

    Inventor： Katsumi Sugiura ,  Chikashi Anayama ,  Akira Furuya

    IPC: H01L2100

    CPC classification number: H01L21/2258 ,  H01S5/162

    Abstract: A method of forming a compound semiconductor device. The method includes the steps of depositing a film that contains zinc oxide and silicon oxide to contain the zinc oxide by 70 wt % or more on compound semiconductor layer as a diffusion source, and diffusing zinc from the diffusion source into the compound semiconductor layer by annealing. Accordingly, there can be provided a compound semiconductor device manufacturing method containing the step of diffusing zinc into compound semiconductor layers, capable of deepening a Zn diffusion position from a ZnO/SiO2 film to such extent that COD endurance of laser end face window structures can be increased rather than the prior art.

    Abstract translation: 一种形成化合物半导体器件的方法。 该方法包括以下步骤：将化合物半导体层上含有氧化锌和氧化硅的膜含有70重量％以上作为扩散源，通过退火将锌从扩散源扩散到化合物半导体层中 。 因此，可以提供一种化合物半导体器件制造方法，其包括将锌扩散到化合物半导体层中的步骤，能够使ZnO扩散位置从ZnO / SiO 2膜深化到激光端面窗结构的COD耐久性 而不是现有技术。

    Bearing case for engine
    33.
    发明授权
    Bearing case for engine 失效

    公开(公告)号：US06640766B2

    公开(公告)日：2003-11-04

    申请号：US10054129

    申请日：2002-01-22

    Applicant: Akira Furuya ,  Takao Sakai

    Inventor： Akira Furuya ,  Takao Sakai

    IPC: F02F700

    CPC classification number: F02F7/0053 ,  F02B75/16 ,  F02B2075/027 ,  F02B2275/22 ,  F05C2201/021 ,  F05C2201/0439

    Abstract: A main bearing case has a bearing holder for holding a bearing so as to support a crankshaft, and a crankcase mounting section at which it is joined to a crankcase. Rib walls are provided so as to surround the bearing holder between the bearing holder and the crankcase mounting section. The rib walls are formed in a side of the crankcase, and in a neighborhood of each inner side face of the bearing holder and the crankcase mounting section. These rib walls receive a force exerted in a radial direction from the crankshaft. Thereby, an improvement of rigidity of the main bearing case can be achieved, and also the lubrication to a valve-operating system can be always ensured by preventing an oil surface from lowering even when an engine is located with inclination.

    Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
    35.
    发明授权
    Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same 有权
    对氢曝露具有低灵敏度的铁电集成电路及其制造方法

    公开(公告)号：US06570202B2

    公开(公告)日：2003-05-27

    申请号：US09779391

    申请日：2001-02-07

    Applicant: Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    Inventor： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC: H01L2976

    CPC classification number: H01L27/11502 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/55 ,  H01L28/75

    Abstract: A hydrogen barrier layer is formed above a ferroelectric thin film in an integrated circuit. The hydrogen barrier layer is directly over a protected segment of the ferroelectric thin film, while a sacrificial segment of the ferroelectric thin film extends laterally beyond the edges of the hydrogen barrier layer. The sacrificial segment absorbs hydrogen so that it cannot diffuse laterally into the protected segment of the ferroelectric thin film. After it absorbs hydrogen, the sacrificial segment is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate compound helps to reduce hydrogen degradation of the ferroelectric properties.

    Abstract translation: 在集成电路中的铁电薄膜的上方形成氢阻挡层。 氢阻挡层直接在铁电薄膜的受保护部分之上，而铁电薄膜的牺牲段横向延伸超过氢阻挡层的边缘。 牺牲段吸收氢，使得其不能横向扩散到铁电薄膜的受保护段中。 在吸收氢之后，牺牲段被蚀刻掉以允许电连接到其下方的电路层。 铁电薄膜优选包含层状超晶格化合物。 添加到铌酸铋钽酸锶化合物的标准前体溶液中的过量铋或铌有助于降低铁电性能的氢降解。

    Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same
    36.
    发明授权
    Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same 有权
    具有自对准氢阻挡层的集成电路及其制造方法

    公开(公告)号：US06512256B1

    公开(公告)日：2003-01-28

    申请号：US09197385

    申请日：1998-11-20

    Applicant: Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    Inventor： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC: H01L31119

    CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

    Abstract: In an integrated circuit, a stack of thin film layers comprising respectively a bottom electrode, a thin film of metal oxide, a top electrode, a lower barrier-adhesion layer, a hydrogen barrier layer, and an upper barrier-adhesion layer are patterned to form a memory capacitor capped with a self-aligned hydrogen barrier layer. Preferably, the top and bottom electrodes comprise platinum, the metal oxide material comprises ferroelectric layered superlattice material, the upper and lower barrier-adhesion layers comprise titanium, and the hydrogen barrier layer comprises titanium nitride. The hydrogen barrier layer inhibits diffusion of hydrogen, thereby preventing hydrogen degradation of the metal oxides. Part of the upper barrier-adhesion layer is removed in order to increase the electrical conductivity in the layer. Preferably, the memory capacitor is a ferroelectric nonvolatile memory. Preferably, the layered superlattice material includes strontium bismuth tantalate or strontium bismuth tantalum niobate.

    Abstract translation: 在集成电路中，将包括底部电极，金属氧化物薄膜，顶部电极，下部阻挡层 - 粘合层，氢气阻挡层和上部阻挡 - 粘附层的薄膜层叠层图案化 形成用自对准氢阻挡层封盖的记忆电容器。 优选地，顶部和底部电极包括铂，金属氧化物材料包括铁电层状超晶格材料，上部和下部阻挡 - 粘附层包含钛，氢气阻挡层包括氮化钛。 氢阻挡层抑制氢的扩散，从而防止金属氧化物的氢降解。 为了增加层中的导电性，去除了上部阻挡 - 粘附层的一部分。 优选地，存储电容器是铁电非易失性存储器。 优选地，层状超晶格材料包括钽酸铋钽或铌酸铋钽铌酸盐。

    Semiconductor laser having double heterostructure
    38.
    发明授权
    Semiconductor laser having double heterostructure 失效
    半导体激光器具有双异质结构

    公开(公告)号：US5255281A

    公开(公告)日：1993-10-19

    申请号：US996802

    申请日：1992-12-24

    Applicant: Mami Sugano ,  Akira Furuya ,  Toshiyuki Tanahashi ,  Makoto Kondo ,  Chikashi Anayama

    Inventor： Mami Sugano ,  Akira Furuya ,  Toshiyuki Tanahashi ,  Makoto Kondo ,  Chikashi Anayama

    IPC: H01L33/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

    CPC classification number: B82Y20/00 ,  H01L33/0062 ,  H01S5/10 ,  H01S5/16 ,  H01S5/2232 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2235 ,  H01S5/2272 ,  H01S5/3211 ,  H01S5/32391

    Abstract: A semiconductor laser includes a substrate having a (100) face as its main surface, where the substrate has a stripe of a first mesa extending in a direction of the substrate and including a (111)B face as its sloping surface, a buried layer formed on the substrate excluding a top surface of the stripe of the first mesa so that the (111)B face of the stripe of the first mesa is covered a sloping surface part of the buried layer, where the top surface of the stripe of the first mesa is the (100) face of the substrate and forms a stripe of a second mesa together with the sloping surface of the buried layer and the stripe of the second mesa has a smaller inclination than the stripe of the first mesa, and a double heterostructure made up of a plurality of semiconductor layers and formed on the stripe of the second mesa. The double heterostructure has a substantially trapezoidal cross section which is determined by the stripe of the second mesa.

    Abstract translation: 半导体激光器包括具有（100）面作为其主表面的衬底，其中衬底具有在衬底的<110>方向上延伸的第一台面的条纹，并且包括（111）B面作为其倾斜表面， 形成在所述基板上的掩埋层，除了所述第一台面的所述条纹的顶表面，使得所述第一台面的所述条纹的（111）B面被所述掩埋层的倾斜表面部分覆盖， 第一台面的条纹是基板的（100）面，并与掩埋层的倾斜表面一起形成第二台面的条纹，并且第二台面的条带具有比第一台面的条纹更小的倾斜度， 以及由多个半导体层构成并形成在第二台面的条上的双异质结构。 双异质结构具有基本上梯形的横截面，其由第二台面的条纹确定。

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