公开(公告)号：US08414790B2

公开(公告)日：2013-04-09

申请号：US12774712

申请日：2010-05-05

Applicant: Andrew D. Bailey, III ,  Yunsang Kim

Inventor： Andrew D. Bailey, III ,  Yunsang Kim

IPC: C03C15/00

CPC classification number: C23G1/24 ,  C23G1/103 ,  C23G5/00 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/6708

Abstract: The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.

Abstract translation: 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿法蚀刻允许在湿蚀刻处理室中在衬底斜面边缘处去除非挥发性铜。 在斜边缘处的等离子体处理允许在精确空间控制下将斜角边缘处的铜去除至基板的最外边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。

公开(公告)号：US08349202B2

公开(公告)日：2013-01-08

申请号：US13300483

申请日：2011-11-18

Applicant: Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

Inventor： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC: C23F1/00

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.

Abstract translation: 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。

公开(公告)号：US08185242B2

公开(公告)日：2012-05-22

申请号：US12116897

申请日：2008-05-07

Applicant: Scott Wong ,  Jeffrey Lin ,  Andrew D. Bailey, III ,  Jack Chen ,  Benjamin W. Mooring ,  Chung Ho Huang

Inventor： Scott Wong ,  Jeffrey Lin ,  Andrew D. Bailey, III ,  Jack Chen ,  Benjamin W. Mooring ,  Chung Ho Huang

IPC: G06F19/00 ,  G06F17/00 ,  G05B19/18 ,  G05B15/00 ,  G05B19/00

CPC classification number: H01L21/68

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract translation: 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。

公开(公告)号：US08127395B2

公开(公告)日：2012-03-06

申请号：US11429574

申请日：2006-05-05

Applicant: Hyungsuk Alexander Yoon ,  Andrew D. Bailey, III ,  Jason A. Ryder ,  Mark H. Wilcoxson ,  Jeffrey G. Gasparitsch ,  Randy Johnson ,  Stephan P. Hoffmann

Inventor： Hyungsuk Alexander Yoon ,  Andrew D. Bailey, III ,  Jason A. Ryder ,  Mark H. Wilcoxson ,  Jeffrey G. Gasparitsch ,  Randy Johnson ,  Stephan P. Hoffmann

IPC: B08B7/00

CPC classification number: H01L21/67046 ,  Y10S134/902

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract translation: 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。

公开(公告)号：US20120034786A1

公开(公告)日：2012-02-09

申请号：US12850552

申请日：2010-08-04

Applicant: Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

Inventor： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

IPC: H01L21/3065 ,  C23C16/00 ,  H01L21/31

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/31

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract translation: 电极暴露于等离子体产生体积，并且被定义为将射频功率传递到等离子体产生体积，并且包括用于保持衬底暴露于等离子体产生体积的上表面。 气体分配单元设置在等离子体产生体积之上并且基本上平行于电极的取向。 气体分配单元包括用于将等离子体处理气体的输入流沿基本上垂直于电极的上表面的方向引导到等离子体产生体积中的气体供给端口的布置。 气体分配单元还包括通孔的布置，每个通孔延伸穿过气体分配单元以将等离子体产生体积流体连接到排气区域。 每个通孔在基本上垂直于电极的上表面的方向上引导来自等离子体产生体积的排气流。

公开(公告)号：US20120031559A1

公开(公告)日：2012-02-09

申请号：US12850559

申请日：2010-08-04

Applicant: Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

Inventor： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

IPC: H01L21/306 ,  C23F1/08

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

Abstract: A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

Abstract translation: 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

公开(公告)号：US20110253312A9

公开(公告)日：2011-10-20

申请号：US12021177

申请日：2008-01-28

Applicant: Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

Inventor： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC: B44C1/22 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract translation: 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

公开(公告)号：US20110232566A1

公开(公告)日：2011-09-29

申请号：US13157122

申请日：2011-06-09

Applicant: Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

Inventor： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC: B05C11/10

CPC classification number: H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

Abstract translation: 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。

公开(公告)号：US20110214687A1

公开(公告)日：2011-09-08

申请号：US13081264

申请日：2011-04-06

Applicant: Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

Inventor： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Yunsang Kim ,  William S. Kennedy

IPC: C23F1/08 ,  B08B13/00 ,  B08B7/00

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

公开(公告)号：US20110180212A1

公开(公告)日：2011-07-28

申请号：US13082393

申请日：2011-04-07

Applicant: Andrew D. Bailey, III ,  Yunsang Kim

Inventor： Andrew D. Bailey, III ,  Yunsang Kim

IPC: H01L21/3065

CPC classification number: H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

Abstract: Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.

Abstract translation: 提供了用于处理基板的斜边缘的室。 一个这样的室包括限定为支撑室中的衬底的底部电极。 底部电极具有用于支撑衬底的底部第一电平和底部电极的外部边缘附近的底部第二电平。 底部第二级别定义在底层第一级以下的一级。 还包括位于底部电极上方的顶部电极。 顶部电极具有顶部第一电平和顶部第二电平，其中顶部第一电平与底部第一电平相反，而顶部第二电平与底部第二电平相反。 顶级的第二级是在顶级第一级以上的一级定义的。 包括位于底部第二级的底环安装座。 底环安装件包括用于使底部永磁体朝向和远离顶部电极移动的第一调节器。 另外还包括一个位于顶部第二层的顶环安装座。 顶环安装件包括用于使顶部永磁体朝向和远离底部电极移动的第二调节器。