公开(公告)号：US20100012491A1

公开(公告)日：2010-01-21

申请号：US12523949

申请日：2008-01-22

申请人： Geoffrey Alan Scarsbrook

发明人： Geoffrey Alan Scarsbrook

IPC分类号： G01N27/30 ,  C25B11/04 ,  B05D5/12

CPC分类号： C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

摘要： The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.

摘要翻译： 本发明涉及金刚石材料，其包括在所述第一表面上具有第一表面和硼掺杂单晶金刚石导电层的硼掺杂单晶金刚石基底层，其中导电层中硼的分布比分布 硼在基底层中。

公开(公告)号：US20100006450A1

公开(公告)日：2010-01-14

申请号：US12514055

申请日：2007-11-09

申请人： Andrew John Whitehead ,  Christopher John Wort ,  Geoffrey Alan Scarsbrook ,  William Joseph Yost, III

发明人： Andrew John Whitehead ,  Christopher John Wort ,  Geoffrey Alan Scarsbrook ,  William Joseph Yost, III

IPC分类号： C02F1/461 ,  C25B11/12

CPC分类号： C02F1/46109 ,  C02F1/4672 ,  C02F2001/46133 ,  C02F2001/46142 ,  C02F2001/46157 ,  C25B1/13 ,  C25B11/03 ,  C25B11/12

摘要： An electrode comprising an electrically conducting diamond plate wherein the diamond plate comprises at least one elongate aperture and having an aperture edge length per unit working area of the diamond plate of greater than about 4 mm/mm2, electrolysis cells comprising such electrodes, methods of treating water using such electrolysis cells and a method of production of ozone are disclosed.

摘要翻译： 一种包括导电金刚石板的电极，其中金刚石板包括至少一个细长孔，并且具有大于约4mm / mm 2的金刚石板的每单位工作面积的孔边长度，包含这种电极的电解槽，处理方法 公开了使用这种电解槽的水和臭氧的生产方法。

公开(公告)号：US20080130937A1

公开(公告)日：2008-06-05

申请号：US11813959

申请日：2006-01-12

申请人： Neil Perkins ,  Charles Simon James Pickles ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

发明人： Neil Perkins ,  Charles Simon James Pickles ,  Christopher John Howard Wort ,  Geoffrey Alan Scarsbrook

IPC分类号： H04R1/02

CPC分类号： H04R7/127 ,  Y10T428/12431

摘要： A rigid three-dimensional component such as a speaker dome is formed of diamond, preferably fabricated to net shape by CVD diamond synthesis, and includes a coating on one or more major surfaces thereof. The coating is designed to enhance the performance and/or to alter the appearance of the component. In particular, the coating is designed to act as a damping medium and/or provide aesthetic qualities to the component.

摘要翻译： 诸如扬声器拱顶的刚性三维部件由金刚石形成，优选通过CVD金刚石合成制成网状，并且在其一个或多个主表面上包括涂层。 该涂层被设计成增强部件的性能和/或改变部件的外观。 特别地，涂层被设计成用作阻尼介质和/或提供元件的美学品质。

公开(公告)号：US07160617B2

公开(公告)日：2007-01-09

申请号：US10653419

申请日：2003-09-03

申请人： Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Daniel James Twitchen ,  Andrew John Whitehead ,  Michael Andrew Cooper ,  Bärbel Susanne Charlotte Dorn

发明人： Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Daniel James Twitchen ,  Andrew John Whitehead ,  Michael Andrew Cooper ,  Bärbel Susanne Charlotte Dorn

IPC分类号： B32B9/00

CPC分类号： C30B25/105 ,  C30B29/04 ,  Y10T428/30

摘要： A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm3, or a combination of such characteristics.

摘要翻译： 通过CVD产生的具有均匀的总硼浓度的单晶硼掺杂金刚石层。 该层由单个生长部分形成，或者具有超过100μm的厚度或者具有超过1mm 3的体积或这些特性的组合。

公开(公告)号：US07128974B2

公开(公告)日：2006-10-31

申请号：US10739014

申请日：2003-12-19

申请人： Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Barbel Susanne Charlotte Dorn ,  Michael Andrew Cooper ,  John Lloyd Collins ,  Andrew John Whitehead ,  Daniel James Twitchen ,  Ricardo Simon Sussmann

发明人： Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Barbel Susanne Charlotte Dorn ,  Michael Andrew Cooper ,  John Lloyd Collins ,  Andrew John Whitehead ,  Daniel James Twitchen ,  Ricardo Simon Sussmann

IPC分类号： C30B25/02 ,  C23C16/27

CPC分类号： C30B25/105 ,  A44C17/00 ,  B01J3/06 ,  B01J2203/062 ,  B01J2203/0655 ,  C30B25/02 ,  C30B25/20 ,  C30B29/04 ,  Y10T428/263 ,  Y10T428/30

摘要： This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is provided a layer of single crystal CVD diamond of high quality having a thickness of at least 2 mm.

摘要翻译： 本发明涉及金刚石，更具体地涉及通过化学气相沉积（以下称为CVD）制造的金刚石。 根据本发明的第一方面，提供了一种厚度至少为2mm的高质量单晶CVD金刚石层。

公开(公告)号：US06707045B1

公开(公告)日：2004-03-16

申请号：US09719242

申请日：2001-07-05

申请人： Ricardo Simon Sussmann ,  Geoffrey Alan Scarsbrook ,  Andrew David Garry Stewart

发明人： Ricardo Simon Sussmann ,  Geoffrey Alan Scarsbrook ,  Andrew David Garry Stewart

IPC分类号： G01T124

CPC分类号： G01T1/26

摘要： A detector for ionising radiation comprises first (10) and second (12) diamond detector elements which are connected to a common contact (14). The two detector elements are of differing thickness and are optimised for the detection of different types of radiation, so that the detector simultaneously provides two output signals indicative of different kinds of radiation incident on the detector.

摘要翻译： 用于电离辐射的检测器包括连接到公共接触件（14）的第一（10）和第二（12）个金刚石检测器元件。 两个检测器元件具有不同的厚度并且被优化用于检测不同类型的辐射，使得检测器同时提供指示入射在检测器上的不同种类的辐射的两个输出信号。

公开(公告)号：US09637838B2

公开(公告)日：2017-05-02

申请号：US13994922

申请日：2011-12-14

申请人： Steven Edward Coe ,  Jonathan James Wilman ,  Helen Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort ,  Matthew Lee Markham

发明人： Steven Edward Coe ,  Jonathan James Wilman ,  Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  John Robert Brandon ,  Christopher John Howard Wort ,  Matthew Lee Markham

IPC分类号： C30B25/14 ,  C01B31/06 ,  C23C16/27 ,  C30B29/04 ,  H01J37/32 ,  C30B25/02 ,  C30B25/16

CPC分类号： C30B25/14 ,  C01B32/25 ,  C23C16/274 ,  C23C16/278 ,  C30B25/02 ,  C30B25/165 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32449

摘要： Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

公开(公告)号：US08986645B2

公开(公告)日：2015-03-24

申请号：US11480823

申请日：2006-07-06

申请人： Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Paul Martyn Spear ,  Stephen David Williams ,  Ian Friel

发明人： Daniel James Twitchen ,  Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Paul Martyn Spear ,  Stephen David Williams ,  Ian Friel

IPC分类号： B01J3/06 ,  C30B7/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  H05H1/24 ,  A44C17/00 ,  B44C1/00 ,  C30B25/02 ,  C30B29/04 ,  C30B33/00

CPC分类号： A44C17/00 ,  B44C1/005 ,  C30B25/00 ,  C30B25/02 ,  C30B29/04 ,  C30B33/00 ,  H01J2237/2808 ,  Y10T428/30

摘要： A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.

摘要翻译： 在衬底上制造CVD单晶金刚石层的方法包括在DVD合成气氛中加入包含硅的气态源。 该方法可用于标记金刚石材料，例如提供可以更容易地确定其合成性质的方法。 也可以开发出高颜色的单晶金刚石材料。

公开(公告)号：US08936774B2

公开(公告)日：2015-01-20

申请号：US12690991

申请日：2010-01-21

申请人： Herman Philip Godfried ,  Geoffrey Alan Scarsbrook ,  Daniel James Twitchen ,  Evert Pieter Houwman ,  Wilhelmus Gertruda Maria Nelissen ,  Andrew John Whitehead ,  Clive Edward Hall ,  Philip Maurice Martineau

发明人： Herman Philip Godfried ,  Geoffrey Alan Scarsbrook ,  Daniel James Twitchen ,  Evert Pieter Houwman ,  Wilhelmus Gertruda Maria Nelissen ,  Andrew John Whitehead ,  Clive Edward Hall ,  Philip Maurice Martineau

IPC分类号： C01B31/06 ,  C30B25/02

CPC分类号： C30B29/04 ,  C01B32/25 ,  C01P2006/60 ,  C01P2006/80 ,  C30B9/00 ,  C30B19/02 ,  C30B25/02 ,  C30B25/165 ,  C30B25/20 ,  C30B25/205 ,  C30B33/02 ,  C30B33/12 ,  G02B1/002 ,  G02B1/02

摘要： A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

摘要翻译： 适用于光学元件或元件的CVD单晶金刚石材料。 它适用于各种各样的光学应用，例如光学窗口，激光窗口，光反射器，光折射器和光栅以及标准具。 CVD金刚石材料通过CVD方法在受控低水平的氮气存在下产生，以控制晶体缺陷的发展，从而获得具有光学应用关键特性的金刚石材料。

公开(公告)号：US08859058B2

公开(公告)日：2014-10-14

申请号：US13994813

申请日：2011-12-14

申请人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

发明人： Carlton Nigel Dodge ,  Paul Nicolas Inglis ,  Geoffrey Alan Scarsbrook ,  Timothy Peter Mollart ,  Charles Simon James Pickles ,  Steven Edward Coe ,  Joseph Michael Dodson ,  Alexander Lamb Cullen ,  John Robert Brandon ,  Christopher John Howard Wort

IPC分类号： C23C16/00 ,  C23C16/27 ,  C23C16/52 ,  C23C16/511

CPC分类号： C23C16/274 ,  C01B32/25 ,  C23C16/4586 ,  C23C16/511 ,  C23C16/52 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32284 ,  Y10T428/12993

摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.

摘要翻译： 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布 在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至5​​0％以上范围内的峰值Ez电场强度 比中央Ez电场强度高。