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公开(公告)号：US07686927B1
公开(公告)日：2010-03-30
申请号：US11510048
申请日：2006-08-25
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
IPC分类号： C25D17/00
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译： 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。
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公开(公告)号：US20100032304A1
公开(公告)日：2010-02-11
申请号：US12578310
申请日：2009-10-13
申请人： Steven T. Mayer , Jonathan D. Reid
发明人： Steven T. Mayer , Jonathan D. Reid
CPC分类号： C25D17/12 , C25D7/123 , C25D17/001 , C25D17/008 , H01L21/2885 , Y10S204/07
摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.
摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而消除系统的电阻。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。
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公开(公告)号：US07605082B1
公开(公告)日：2009-10-20
申请号：US11251353
申请日：2005-10-13
申请人： Jonathan D. Reid , Eric G. Webb , Edmund B. Minshall , Avishai Kepten , R. Marshall Stowell , Steven T. Mayer
发明人： Jonathan D. Reid , Eric G. Webb , Edmund B. Minshall , Avishai Kepten , R. Marshall Stowell , Steven T. Mayer
IPC分类号： H01L21/44
CPC分类号： H01L21/7684 , C23C18/1607 , C23C18/1882 , C25D5/02 , C25D7/123 , H01L21/02074 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/32134 , H01L21/76831 , H01L21/76849 , H01L21/76883 , Y10S414/135
摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.
摘要翻译： 在半导体器件中的导电线上形成覆盖层的方法的特征在于以下操作：（a）提供包括介电层的半导体衬底，所述电介质层具有（i）设置在其中的暴露的导电线（例如铜线）和（ ii）设置在其上的暴露的阻挡层; 和（b）在所述半导体衬底的至少暴露的导电线上沉积覆盖层材料。 在某些实施例中，该方法还可以包括移除设置在阻挡层和导电线上的导电层（例如，覆盖层）的至少一部分以暴露阻挡层。
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34.发明授权公开(公告)号：US07341946B2
公开(公告)日：2008-03-11
申请号：US10705579
申请日：2003-11-10
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C25D7/12 , H01L21/2885 , H01L21/76856 , H01L21/76873 , H01L21/76877
摘要： Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the barrier layer surface to a surface treatment adapted to facilitate deposition of copper on the barrier layer. Copper then is electrochemically deposited overlying the barrier layer.
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公开(公告)号：US06755946B1
公开(公告)日：2004-06-29
申请号：US10010954
申请日：2001-11-30
IPC分类号： C25D1706
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/12
摘要： The present invention includes apparatus and methods for measuring impedance of a layer of deposited metal on a substrate and controlling deposition uniformity during electroplating. A first circuit delivers plating current to a metal layer on the substrate, and a second circuit, electrically isolated from the first, measures the impedance. Methods of the invention provide multi-point sheet resistance measurements before and during an electroplating process on a substrate. In a specific example, resistance is measured via a copper seed layer during electroplating.
摘要翻译： 本发明包括用于测量衬底上的沉积金属层的阻抗并控制电镀期间的沉积均匀性的装置和方法。 第一电路将电镀电流输送到衬底上的金属层，并且与第一电路电隔离的第二电路测量阻抗。 本发明的方法在基板上的电镀工艺之前和期间提供多点薄层电阻测量。 在具体实例中，电镀期间通过铜籽晶层测量电阻。
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36.发明授权Electroplating process chamber and method with pre-wetting and rinsing capability 有权电镀工艺室和预润湿和冲洗能力的方法公开(公告)号：US06716334B1
公开(公告)日：2004-04-06
申请号：US09829848
申请日：2001-04-09
IPC分类号： C25D502
CPC分类号： H01L21/67034 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/08 , C25D21/18
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译： 电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。 回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。 还提供废物通道，其具有与回收通道的入口不同的高度的入口。 电镀后，将晶片提升到一个位置并旋转。 在旋转的同时，将晶片用例如超纯水彻底冲洗。 晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。
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公开(公告)号：US06214193B1
公开(公告)日：2001-04-10
申请号：US09374253
申请日：1999-08-13
IPC分类号： C25D502
摘要： A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to be circulated back into the inner plating bath container. A waste channel is also provided having an inlet at a different height than the inlet of the reclaim channel. After electroplating, the wafer is lifted to a position and spun. While spinning, the wafer is thoroughly rinse with, for example, ultra pure water. The spin rate and height of the wafer determine whether the water and solution are reclaimed through the reclaim channel or disposed through the waste channel.
摘要翻译： 电镀槽具有内浸镀液容器，用于在浸没在由内镀浴容器所包含的溶液中的工件（例如，晶片）上进行电镀。 回收入口将任何溢出内部镀浴容器的溶液漏回到储存容器中，以循环回内部镀浴容器。 还提供废物通道，其具有与回收通道的入口不同的高度的入口。 电镀后，将晶片提升到一个位置并旋转。 在旋转的同时，将晶片用例如超纯水彻底冲洗。 晶圆的旋转速度和高度决定了水和溶液是通过回收通道还是通过废物通道进行回收。
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公开(公告)号：US5280414A
公开(公告)日：1994-01-18
申请号：US536145
申请日：1990-06-11
IPC分类号： H01R43/02 , B23K35/00 , B23K35/30 , H01R4/02 , H05K3/28 , H05K3/32 , H05K3/40 , H05K3/46 , H05K3/36 , B32B31/00 , H05K1/11
CPC分类号： B23K35/3013 , B23K35/001 , H01R4/02 , H05K3/4614 , H01L2924/0132 , H05K2201/0305 , H05K3/28 , H05K3/328 , H05K3/4038 , Y10S428/901 , Y10T156/1056 , Y10T29/49126
摘要： A method is disclosed of simultaneously laminating circuitized dielectric layers to form a multilayer high performance circuit board and making interlevel electrical connections. The method selects two elements which will form a eutectic at one low temperature and will solidify to form an alloy which will only remelt at a second temperature higher than any required by any subsequent lamination. The joint is made using a transient liquid bonding technique and sufficient Au and Sn to result in a Au-Sn20wt% eutectic at the low temperature. Once solidified, the alloy formed remains solid throughout subsequent laminations. As a result, a composite, multilayer, high performance circuit board is produced, electrically joined at selected lands by the solid alloy.
摘要翻译： 公开了一种同时层压电路化电介质层以形成多层高性能电路板并制造层间电连接的方法。 该方法选择将在一个低温下形成共晶体的两种元素，并且将固化形成合金，该合金将仅在任何后续层压所需的第二温度下再熔化。 使用瞬态液体粘合技术和足够的Au和Sn制成接头，以在低温下产生Au-Sn20wt％共晶。 一旦固化，形成的合金在随后的叠片中保持固体。 结果，制造复合多层高性能电路板，通过固体合金在选定的焊盘处电连接。
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公开(公告)号：US5153986A
公开(公告)日：1992-10-13
申请号：US731598
申请日：1991-07-17
申请人： John M. Brauer , Frederick R. Christie , William H. Lawrence , Ashit A. Mehta , Jonathan D. Reid , William J. Summa
发明人： John M. Brauer , Frederick R. Christie , William H. Lawrence , Ashit A. Mehta , Jonathan D. Reid , William J. Summa
CPC分类号： H05K3/445 , H01L23/142 , H05K1/056 , H01L2924/0002 , H05K2201/0179 , H05K2201/068 , H05K2201/09536 , H05K2203/135 , H05K3/388 , H05K3/389 , H05K3/4076 , H05K3/426 , Y10S428/901 , Y10T156/10 , Y10T29/49126 , Y10T29/49155 , Y10T29/49165
摘要： Disclosed is a method of fabricating a multilayer electronic circuit package. The multilayer circuit package has at least one layer that is a circuitized, polymer encapsulated metal core. According to the method of the invention a metal foil is provided for the metal core of the layer. This metal core foil may be provided as a single unit or in a continuous, roll to roll, process. The vias and through holes are drilled, etched, or punched through the metal foil. An adhesion promoter is then applied to the perforate metal foil for subsequent adhesion of polymer to the foil. The dielectric polymer is then applied to the perforate metal foil core by vapor depositing, chemical vapor depositing, spraying or electrophoretically depositing, a thermally processable dielectric polymer or precursor thereof onto exposed surfaces of the perforate metal foil including the walls of the through holes and vias. The dielectric polymer or precursor thereof is then thermally processed to form a conformal dielectric, polymeric coating on surfaces of the perforate metal foil, including the interior surfaces of the vias and through holes. This dielectric, polymeric coating may then be circuitized, and coated with an adhesive for lamination to the next adjacent layer. After lamination, one or more chips are attached to the completed package.
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公开(公告)号：US4904350A
公开(公告)日：1990-02-27
申请号：US270852
申请日：1988-11-14
IPC分类号： C25D7/06
CPC分类号： C25D7/0614
摘要： According to the present invention, a submersible electrical current supply device and method of plating using said device for providing electrical current to a strip as it is continuously moved through an electroplating bath is provided. The electrical current supply device includes a housing having a slot extending therethrough with entry and exit openings and has wipers disposed at both the entrance and exit openings. In the central section of the device, electrical contacts in the form of electrical brushes are biased into contact with the strip and are provided with electrical contacts to supply current for plating to the brushes. The strip is continuously passed through the slot and contact with the brushes and electrical current is supplied by the brushes. The thickness of the slot and the length of the slot is so controlled as to provide an amount of electrical plating solution around the brushes which as a sufficiently high electrical resistance to substantially eliminate any electroplating of the material on to the brushes.
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