公开(公告)号：US5551280A

公开(公告)日：1996-09-03

申请号：US511694

申请日：1995-08-04

Applicant: Sang-Moon Lee

Inventor： Sang-Moon Lee

IPC: B60R25/10 ,  G01L5/00 ,  G01P1/02 ,  G01P13/00 ,  G01P15/08 ,  G01M7/00

CPC classification number: G01P1/023 ,  B60R25/1004 ,  G01L5/0052 ,  G01P13/00 ,  G01P15/08

Abstract: This invention relates to multi purpose shock sensor being used as a vehicle burglar alarm and/or a security system for restricted area, which consists of a cap, a vibration sensing element, a sealed cavity, and a balance weight in the characterized that having a safety cover securely fixed and surrounded with the elastic cap, preparing a gap having a fixing surface and a free surface on inner peripherals of the safety cover, fixing a lid on the safety cover, forming a groove on a peripherals of a balance weight, forming a coupling hole on the center of the cap, and coupling the balance weight into the coupling hole in the top of the cap.

Abstract translation: 本发明涉及用作车辆防盗报警器和/或用于限制区域的安全系统的多用途冲击传感器，其包括盖，振动传感元件，密封腔和平衡重，其特征在于具有 安全盖牢固地固定并用弹性盖包围，在安全盖的内周边准备一个具有固定表面和自由表面的间隙，将盖子固定在安全盖上，在平衡重的外围物体上形成凹槽，形成 在盖的中心上的联接孔，并且将平衡重联接到盖的顶部中的联接孔中。

公开(公告)号：US10744165B2

公开(公告)日：2020-08-18

申请号：US15229028

申请日：2016-08-04

Applicant: Sang-Moon Lee

Inventor： Sang-Moon Lee

IPC: A61K35/57 ,  A61K35/60 ,  A61K35/12 ,  A61K9/00 ,  A61K35/58

Abstract: The present invention relates to a pharmaceutical composition for preventing and treating cell proliferative diseases comprising a feather of birds and a scale of fish, a scale transformed from the dermis, a degenerated or cornified variant of a scale, or a scale or horny scale of reptiles as an active ingredient. More particularly, the present invention relates to a pharmaceutical composition for preventing and treating cell proliferative diseases comprising a mixture of 70˜85 weight % of a feather of birds and 15˜30 weight % of a scale of fish, a scale transformed from the dermis, a degenerated or cornified variant of a scale, or a scale or horny scale of reptiles as an active ingredient. The inventive composition has the effect of inhibiting and preventing growth of cancer cells. Accordingly, the inventive composition may be used for anticancer purposes to prevent, ameliorate or treat cancer.

公开(公告)号：US09343564B2

公开(公告)日：2016-05-17

申请号：US14718968

申请日：2015-05-21

Applicant: Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

Inventor： Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78 ,  H01L21/02 ,  H01L29/12

CPC classification number: H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

公开(公告)号：US09324852B2

公开(公告)日：2016-04-26

申请号：US14623394

申请日：2015-02-16

Applicant: Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

Inventor： Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78 ,  H01L21/02 ,  H01L29/12

CPC classification number: H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract translation: 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US09306008B2

公开(公告)日：2016-04-05

申请号：US14207880

申请日：2014-03-13

Applicant: Dong-soo Lee ,  Myoung-Jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

Inventor： Dong-soo Lee ,  Myoung-Jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L21/336 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L21/322 ,  H01L29/78 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

Abstract translation: 本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。 半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。 吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。

公开(公告)号：US20150200285A1

公开(公告)日：2015-07-16

申请号：US14623394

申请日：2015-02-16

Applicant: Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

Inventor： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC: H01L29/778 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract translation: 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US09082540B2

公开(公告)日：2015-07-14

申请号：US13429068

申请日：2012-03-23

Applicant: Yong Suk Kim ,  Sung Kwon Wi ,  Jeong Bok Kwak ,  Sang Moon Lee ,  Won Chul Sim ,  Young Seuck Yoo

Inventor： Yong Suk Kim ,  Sung Kwon Wi ,  Jeong Bok Kwak ,  Sang Moon Lee ,  Won Chul Sim ,  Young Seuck Yoo

IPC: H03H7/01 ,  B32B38/04 ,  B32B37/24 ,  H01F17/00 ,  H03H7/42 ,  H03H1/00

CPC classification number: H01F41/0206 ,  B32B37/24 ,  B32B38/04 ,  B32B2037/243 ,  B32B2038/047 ,  B32B2457/00 ,  H01F17/0013 ,  H01F17/0033 ,  H01F2017/0093 ,  H03H7/427 ,  H03H2001/0057 ,  H03H2001/0085 ,  Y10T156/1057

Abstract: The present invention relates to a common mode filter and a method of manufacturing the same. In order to implement a common mode filter with low shrinkage, high substrate sintered density, and high strength, the present invention provides a common mode filter including: a lower substrate; an insulating layer having a conductor pattern inside and provided on the lower substrate; an upper substrate provided on the insulating layer; and a ferrite core made of ferrite and provided in the center of the insulating layer, the lower substrate, and the upper substrate by penetrating the insulating layer, the lower substrate, and the upper substrate, and a method of manufacturing the same.

Abstract translation: 共模滤波器及其制造方法技术领域本发明涉及共模滤波器及其制造方法。 为了实现低收缩率，高基板烧结密度和高强度的共模滤波器，本发明提供一种共模滤波器，包括：下基板; 绝缘层，其内部具有导体图案并设置在下基板上; 设置在所述绝缘层上的上基板; 以及由铁氧体制成的铁氧体磁心及其制造方法，其通过贯穿绝缘层，下基板和上基板而设置在绝缘层，下基板和上基板的中心。

公开(公告)号：US08788010B2

公开(公告)日：2014-07-22

申请号：US12278772

申请日：2007-02-09

Applicant: Sang-Moon Lee

Inventor： Sang-Moon Lee

IPC: A61B5/00

CPC classification number: A61B5/04 ,  A61B5/05 ,  A61B5/415 ,  A61B5/742 ,  A61K49/00 ,  F26B1/00 ,  F26B5/14 ,  G01N33/4833 ,  Y10T29/49002

Abstract: The invention relates to a material for the detection of biological electro-magnetic signals made of a epidermis of a living organism and a diagnostic device using the same, and more particularly, to a material for the detection of biological electro-magnetic signals made of a epidermis of a living organism, through drying is one stage, also selecting is another stage of production, and a diagnostic device using the same. The material of the invention has an effect of detecting biological electro-magnetic signals. Accordingly, the material for the detection of biological electro-magnetic signals of the invention can be used for manufacturing a diagnostic device for detecting biological electro-magnetic signals non-invasively as well as effectively used in diagnosis in cases where biological electro-magnetic signals are changed by cancer, inflammations due to immunodeficiency and so on.

Abstract translation: 本发明涉及一种用于检测由活体表皮制成的生物电磁信号的材料和使用其的诊断装置，更具体地说，涉及一种用于检测生物电磁信号的材料 生物体的表皮，通过干燥是一个阶段，也是选择是另一个生产阶段，以及使用它的诊断装置。 本发明的材料具有检测生物电磁信号的作用。 因此，本发明的生物电磁信号检测用材料可用于制造非侵入性地检测生物电磁信号的诊断装置，并且在生物电磁信号为 被癌症改变，免疫缺陷引起的炎症等。

公开(公告)号：US20130049917A1

公开(公告)日：2013-02-28

申请号：US13596606

申请日：2012-08-28

Applicant: Yong Suk KIM ,  Sung Kwon Wi ,  Sang Moon Lee ,  Young Seuck Yoo ,  Jeong Bok Kwak

Inventor： Yong Suk KIM ,  Sung Kwon Wi ,  Sang Moon Lee ,  Young Seuck Yoo ,  Jeong Bok Kwak

IPC: H01F5/00

CPC classification number: H01F17/0006 ,  H01F41/041 ,  H01F2017/0066 ,  H01F2017/0073

Abstract: Disclosed herein are a conductor pattern of an electronic component formed in an oval coil shape on a magnetic substrate, the conductor pattern including: a straight part; and a curved part connected to the straight part at both sides thereof, wherein a line width of the curved part is smaller than that of the straight part, and an electronic component including the same. With the conductor pattern and the electronic component including the same according to the present invention, the high precision fine line width and the high resolution conductor pattern may be implemented to improve connectivity, thereby improving characteristics and reliability of the electronic component.

Abstract translation: 这里公开了在磁性基板上形成为椭圆线圈形状的电子部件的导体图案，该导体图案包括：直部; 以及弯曲部分，其两侧连接到所述直线部分，其中所述弯曲部分的线宽小于所述直线部分的线宽度，以及包括所述弯曲部分的电子部件。 利用根据本发明的导体图案和包括它们的电子部件，可以实现高精度细线宽度和高分辨率导体图案以改善连接性，从而提高电子部件的特性和可靠性。

公开(公告)号：US08212266B2

公开(公告)日：2012-07-03

申请号：US12662845

申请日：2010-05-06

Applicant: Sang-moon Lee ,  Young-soo Park

Inventor： Sang-moon Lee ,  Young-soo Park

IPC: H01L33/00

CPC classification number: H01L21/0259 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02664 ,  H01L33/08 ,  H01L33/18 ,  H01L33/382 ,  H01L33/44

Abstract: A light emitting device may include a plurality of nano-structures having a strip shape, each including a first nano-structure and a second nano-structure, the first nano-structures being the same height on the buffer layer.

Abstract translation: 发光器件可以包括具有带状的多个纳米结构，每个纳米结构包括第一纳米结构和第二纳米结构，第一纳米结构在缓冲层上具有相同的高度。