公开(公告)号：US09236221B2

公开(公告)日：2016-01-12

申请号：US14550417

申请日：2014-11-21

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn

IPC: H01J37/31 ,  H01J49/04 ,  H01J37/30 ,  H01J37/08

CPC classification number: H01J37/30 ,  H01J37/08 ,  H01J2237/0812 ,  H01J2237/317

Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes using one or more molecular beams to optimize pressure at localized regions of the ion beam.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。 特别地，GCIB蚀刻处理包括使用一个或多个分子束来优化离子束局部区域处的压力。

公开(公告)号：US09209033B2

公开(公告)日：2015-12-08

申请号：US14306305

申请日：2014-06-17

Applicant: TEL EPION Inc.

Inventor： Luis Fernandez ,  Edmund Burke

IPC: H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01L21/31056 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/66795

Abstract: A gas cluster ion beam (GCIB) etching method for adjusting a fin height in finFET devices is described. The method includes providing a substrate having a fin structure and a gap-fill material layer completely overlying the fin structure and filling the regions between each fin of the fin structure, wherein each fin includes a cap layer formed on a top surface thereof, and planarizing the gap-fill material layer until the cap layer is exposed on at least one fin of the fin structure. Additionally, the method includes setting a target fin height for the fin structure, wherein the fin height measured from an interface between the cap layer and the fin structure, and exposing the substrate to a GCIB and recessing the gap-fill material layer relative to the cap layer until the target fin height is substantially achieved.

Abstract translation: 描述了用于调整finFET器件中鳍片高度的气体簇离子束（GCIB）蚀刻方法。 该方法包括提供具有翅片结构的衬底和完全覆盖翅片结构的间隙填充材料层，并填充翅片结构的每个翅片之间的区域，其中每个翅片包括形成在其顶表面上的盖层，并且平坦化 间隙填充材料层直到帽层暴露在鳍结构的至少一个翅片上。 此外，该方法包括设置翅片结构的目标翅片高度，其中从盖层和翅片结构之间的界面测量的翅片高度，以及将基底暴露于GCIB并使间隙填充材料层相对于 盖层直到目标翅片高度基本上达到。

公开(公告)号：US09123505B1

公开(公告)日：2015-09-01

申请号：US14492819

申请日：2014-09-22

Applicant: TEL Epion Inc.

Inventor： Vincent Lagana-Gizzo ,  Noel Russell ,  Joshua LaRose ,  Soo Doo Chae

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/304 ,  H01J37/3005 ,  H01J37/3053 ,  H01J2237/08 ,  H01J2237/30455 ,  H01J2237/3151 ,  H01J2237/317

Abstract: A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.

Abstract translation: 描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。 该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。 另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性 ，作为工件上层位置的函数，以达到测量属性的目标轮廓。

公开(公告)号：US09105443B2

公开(公告)日：2015-08-11

申请号：US14548550

申请日：2014-11-20

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: G21K5/00 ,  H01J37/20 ,  H01J37/317 ,  H01J37/305

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。

公开(公告)号：US20150056815A1

公开(公告)日：2015-02-26

申请号：US14306305

申请日：2014-06-17

Applicant: TEL EPION Inc.

Inventor： Luis FERNANDEZ ,  Edmund BURKE

IPC: H01L21/3065 ,  H01L21/3105

CPC classification number: H01L21/3065 ,  H01L21/31056 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/66795

Abstract: A gas cluster ion beam (GCIB) etching method for adjusting a fin height in finFET devices is described. The method includes providing a substrate having a fin structure and a gap-fill material layer completely overlying the fin structure and filling the regions between each fin of the fin structure, wherein each fin includes a cap layer formed on a top surface thereof, and planarizing the gap-fill material layer until the cap layer is exposed on at least one fin of the fin structure. Additionally, the method includes setting a target fin height for the fin structure, wherein the fin height measured from an interface between the cap layer and the fin structure, and exposing the substrate to a GCIB and recessing the gap-fill material layer relative to the cap layer until the target fin height is substantially achieved.

Abstract translation: 描述了用于调整finFET器件中鳍片高度的气体簇离子束（GCIB）蚀刻方法。 该方法包括提供具有翅片结构的衬底和完全覆盖翅片结构的间隙填充材料层，并填充翅片结构的每个翅片之间的区域，其中每个翅片包括形成在其顶表面上的盖层，并且平坦化 间隙填充材料层直到帽层暴露在鳍结构的至少一个翅片上。 此外，该方法包括设置翅片结构的目标翅片高度，其中从盖层和翅片结构之间的界面测量的翅片高度，以及将基底暴露于GCIB并使间隙填充材料层相对于 盖层直到目标翅片高度基本上达到。

公开(公告)号：US10861674B2

公开(公告)日：2020-12-08

申请号：US16665357

申请日：2019-10-28

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Martin D. Tabat ,  Kenneth Regan ,  Allen J. Leith ,  Michael Graf

IPC: H01J37/304 ,  H01J37/20 ,  H01J37/08 ,  H01J37/147

Abstract: An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

公开(公告)号：US10096527B2

公开(公告)日：2018-10-09

申请号：US15242376

申请日：2016-08-19

Applicant: TEL Epion Inc.

Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  G05B19/418

Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

公开(公告)号：US20170077001A1

公开(公告)日：2017-03-16

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/66 ,  G05B19/406 ,  H01L21/263

CPC classification number: H01L22/20 ,  G05B19/406 ,  G05B2219/40624 ,  G05B2219/45031 ,  H01J37/304 ,  H01J2237/30483 ,  H01J2237/31 ,  H01L22/12

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

Abstract translation: 描述用于执行工件的位置特定处理的系统和方法。 该方法包括将微电子工件放置在光束处理系统中，为小于微电子工件的尺寸的光束扫描图案选择光束扫描尺寸，产生处理光束，以及通过照射来处理微电子工件的目标区域 沿着光束扫描图案的处理光束到被选择用于处理微电子工件的光束扫描尺寸内的目标区域上。

公开(公告)号：US09343259B2

公开(公告)日：2016-05-17

申请号：US14815265

申请日：2015-07-31

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Avrum Freytsis ,  Robert K. Becker

IPC: H01J37/08 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。

公开(公告)号：US20160042909A1

公开(公告)日：2016-02-11

申请号：US14815265

申请日：2015-07-31

Applicant: TEL Epion Inc.

Inventor： Matthew C. Gwinn ,  Avrum Freytsis ,  Robert K. Becker

IPC: H01J37/08 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

Abstract: A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

Abstract translation: 描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个锥形喷嘴，其被对准，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附着到第一锥形喷嘴的更大的锥形空腔。 过渡区域可以设置在两个锥形喷嘴之间，其可以基本上圆柱形并稍微大于第一锥形喷嘴的最大直径。