Abstract:
A package substrate having landless conductive traces is proposed, which includes a core layer with a plurality of plated through holes formed therein, and a plurality of conductive traces formed on at least a surface of the core layer. Each of the conductive traces has a connection end, a bond pad end, and a base body connecting the connection end and the bond pad end, the conductive trace is electrically connected to a corresponding one of the plated through holes through the connection end, and the connection end has a width greater than that of the base body but not greater than the diameter of the plated through hole, thereby increasing the contact area between the conductive trace and the plated through hole and preventing the contact surface of the conductive trace with the plated through hole from cracking.
Abstract:
A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.
Abstract:
A semiconductor package substrate proposed by the invention includes a base body and a plurality of finger pads disposed on surface of the base body, wherein the finger pads are arranged in such a way that an angle is formed between connecting line of centers of two adjacent finger pads and the direction in which the finger pads are arranged. The finger pads are waterdrop shaped finger pads with arc ends and angle ends alternately disposed on surface of the substrate, alternately disposed waterdrop shaped finger pads and arc shaped finger pads, or alternately disposed arc shaped finger pads at a predetermined spacing. According to the present invention, distance between adjacent finger pads is reduced and problem of short circuit as a result of erroneous contact between bonding wire and adjacent finger pad is prevented.
Abstract:
A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.
Abstract:
The present invention discloses a flip-chip semiconductor package and a chip carrier thereof. The chip carrier includes a groove formed around a chip-mounting area. The groove may be formed along a periphery of the chip-mounting area or at corners thereof. The groove is filled with a filler of low Young's modulus so as to absorb and eliminate thermal stress, thereby preventing delamination between an underfill and a flip chip mounted on the chip-mounting area.
Abstract:
A semiconductor package substrate is provided, which includes a substrate body having a plurality of conductive through holes formed therein, wherein at least two adjacent conductive through holes are formed as a differential pair, each of which has a ball pad formed at an end thereof; and at least one electrically integrated layer formed in the substrate body, and having an opening corresponding to the two adjacent conductive through holes formed as the differential pair and the ball pads thereof. Thus, the spacing between the conductive through holes and the electrically integrated layer and the spacing between the ball pads can be enlarged by the opening, so as to balance the impedance match.
Abstract:
A nickel/gold (Ni/Au) pad structure of a semiconductor package and a fabrication method thereof are provided. The fabrication method includes preparing a core layer; forming a conductive trace layer on the core layer; patterning the conductive trace layer to form at least one pad of the conductive trace layer; applying a conductive layer; forming a photoresist layer to define a predetermined plating region on the pad, wherein the predetermined plating region is smaller in area than the pad; forming a Ni/Au layer on the predetermined plating region; removing the photoresist layer and etching away the conductive layer; and applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein the opening is larger in area than the Ni/Au layer. The Ni/Au pad structure fabricated by the above method can prevent a solder extrusion effect incurred in the conventional technology.
Abstract:
A semiconductor package and a method for fabricating the same are proposed. A substrate having a first circuit layer, a second circuit layer, and a core layer formed between the first and second circuit layers is provided. At least one second opening is formed on the second circuit layer. At least one first opening is formed on the first circuit layer corresponding to the second opening. A plurality of finger holes corresponding to bond fingers on the first circuit layer are formed in the core layer. A through opening is formed in the core layer and communicates with the first and second openings. At least one chip is mounted on the first circuit layer and covers the first opening, with its active surface being exposed to the first opening. An encapsulant is formed to fill the first and second openings and the through opening and encapsulate the chip.
Abstract:
A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.
Abstract:
A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.