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71 条记录 (耗时 0.037 秒)

    Integrated circuit compatible thin film field effect transistor and method of making same
    31.
    发明授权
    Integrated circuit compatible thin film field effect transistor and method of making same 失效
    集成电路兼容薄膜场效应晶体管及其制作方法

    公开(公告)号：US4668968A

    公开(公告)日：1987-05-26

    申请号：US610130

    申请日：1984-05-14

    申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

    发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

    IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/161 ,  H01L29/40 ,  H01L29/786 ,  H01L29/04 ,  H01L29/54

    CPC分类号： H01L29/78684 ,  H01L29/161

    摘要： There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprises rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.

    摘要翻译： 公开了集成电路兼容的薄膜场效应晶体管，其可以在低温下制造并且以快速切换速率操作以用于例如视频速率应用。 晶体管包括具有比无定形材料更有序的结构的锗半导体材料体，并且比单晶材料有序。 晶体管的源极和漏极包括形成在锗半导体材料体内或体内的整流触点。 还公开了制造晶体管和利用晶体管的电子可寻址阵列系统的方法。

    Method of depositing directly activated species onto a remotely located substrate
    33.
    发明授权
    Method of depositing directly activated species onto a remotely located substrate 失效
    将直接活化的物质沉积到远位的基底上的方法

    公开(公告)号：US5093149A

    公开(公告)日：1992-03-03

    申请号：US520988

    申请日：1990-05-07

    申请人： Joachim Doehler ,  Stephen J. Hudgens ,  Stanford R. Ovshinsky ,  Lester R. Peedin ,  Jeffrey M. Krisko

    发明人： Joachim Doehler ,  Stephen J. Hudgens ,  Stanford R. Ovshinsky ,  Lester R. Peedin ,  Jeffrey M. Krisko

    IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455

    CPC分类号： C23C16/4551 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45514

    摘要： A method of depositing high quality thin film at a high rate of deposition through the formation of a high flux of activated precursor species of a precursor deposition gas by employing a substantial pressure differential between the pressure adjacent the aperture in a conduit from which said precursor deposition gas is introduced into the interior of a vacuumized enclosure and the background pressure which exits in said enclosure. As the precursor deposition gas is introduced into said enclosure, a high density plume of said activated precursor species are formed therefrom due to an electromagnetic field established in an activation region adjacent said aperture. The pressure differential is sufficient to cause those activated precursor species to be deposited upon a remotely positioned substrate. In order to obtain a sufficient pressure differential, it is preferred that the flow of the precursor deposition gas reaches transonic velocity. And in order to obtain a high quality thin film, it is preferred that the plume of activated precursor species is spaced from the substrate; without structural or electrical confinement, a distance from the activation region greater than the mean free path of undesired activated precursor species and within the mean free path of desired species.

    摘要翻译： 一种沉积高质量薄膜的方法，该方法是通过在邻近导管孔之间的压力之间产生相当大的压力差，形成高通量的活化前体物质的前体沉积气体， 气体被引入真空封壳的内部，并且在所述外壳中离开的背景压力。 当前体沉积气体被引入所述外壳中时，由于在邻近所述孔的激活区域中建立的电磁场，所以形成所述活化的前体物质的高密度羽流。 压力差足以使这些活化的前体物质沉积在远距离定位的基底上。 为了获得足够的压差，优选前体沉积气体的流量达到跨音速。 并且为了获得高质量的薄膜，优选活化的前体物质的羽流与基底间隔开; 没有结构或电气限制，距离激活区域的距离大于不期望的活化的前体物质的平均自由程和在所需物种的平均自由程中。

    Microwave method of making semiconductor members
    36.
    发明授权
    Microwave method of making semiconductor members 失效
    微波制造半导体元件的方法

    公开(公告)号：US4619729A

    公开(公告)日：1986-10-28

    申请号：US734576

    申请日：1985-05-15

    申请人： Annette G. Johncock ,  Stephen J. Hudgens

    发明人： Annette G. Johncock ,  Stephen J. Hudgens

    IPC分类号： G03G5/08 ,  C23C16/511 ,  G03G5/082 ,  H01L21/205 ,  H01L31/0248 ,  H01L31/08 ,  H01L31/09 ,  H01L31/18 ,  H01L31/20 ,  C30B25/02

    CPC分类号： H01J37/32192 ,  C23C16/511 ,  G03G5/08235 ,  G03G5/08278 ,  H01L31/095 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： A process and system for making semiconductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposition plasma. The microwave energy forms depositing species and molecular ions of a semiconductor element and the potential of the plasma is controlled to alter the ion bombardment of the depositing species.The process and system include coupling microwave energy into a substantially enclosed reaction vessel containing a substrate and depositing semiconductor alloys onto the substrate from a reaction gas introduced into the vessel. The semiconductor alloys are particularly suited for relatively thick photoconductive members. The photoconductive member includes at least a bottom blocking layer and a photoconductive layer. The photoconductive member can be formed in a negative or positive charge type configuration. The members also can include a top blocking enhancement layer.

    摘要翻译： 用于制造具有高反应气体转化效率和高沉积速率的半导体合金和部件的工艺和系统利用微波能量来形成沉积等离子体。 微波能量形成了半导体元件的沉积物质和分子离子，并且控制等离子体的电位以改变沉积物质的离子轰击。 该方法和系统包括将微波能量耦合到包含基底的基本封闭的反应容器中，并且将半导体合金从引入容器的反应气体沉积到基底上。 半导体合金特别适用于较厚的感光体。 感光体至少包括底部阻挡层和光电导层。 感光体可以形成为负电荷型或正电荷型。 这些构件还可以包括顶部阻挡增强层。

    Multilayered phase change memory
    38.
    发明授权
    Multilayered phase change memory 有权
    多层相变存储器

    公开(公告)号：US07381611B2

    公开(公告)日：2008-06-03

    申请号：US10634130

    申请日：2003-08-04

    申请人： Brian G. Johnson ,  Stephen J. Hudgens

    发明人： Brian G. Johnson ,  Stephen J. Hudgens

    IPC分类号： H01L21/8234

    CPC分类号： G11C13/0004 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144

    摘要： A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.

    摘要翻译： 响应于电刺激，相变层可以在越来越少的导电状态之间切换。 相变层可以位于用作电极，电阻加热器和绝缘屏障的非开关式超声波材料上。 相变层可以位于作为电极，电阻加热器和热障壁的非切换式超声波材料上。

    Refreshing a phase change memory
    39.
    发明申请
    Refreshing a phase change memory 审中-公开
    刷新相变存储器

    公开(公告)号：US20070279975A1

    公开(公告)日：2007-12-06

    申请号：US11447821

    申请日：2006-06-06

    申请人： Stephen J. Hudgens

    发明人： Stephen J. Hudgens

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C2013/0078 ,  G11C2207/229 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L45/148

    摘要： A phase change memory may be utilized in place of a dynamic random access memory in a processor-based system. In some embodiments, a chalcogenide material, used for the phase change memory, has relatively high crystallization speed so that it may be quickly programmed. Materials may be chosen which have high crystallization speed and corresponding poor data retention. The poor data retention may be compensated by providing a refresh cycle.

    摘要翻译： 在基于处理器的系统中可以使用相变存储器代替动态随机存取存储器。 在一些实施方案中，用于相变存储器的硫族化物材料具有相对高的结晶速度，使得其可以被快速编程。 可以选择具有高结晶速度和相应差的数据保留性的材料。 可以通过提供刷新周期来补偿差的数据保留。