Abstract:
A semiconductor packaging technology is proposed for the fabrication of a chip-on-chip (COC) based multi-chip module (MCM) with molded underfill. The proposed semiconductor packaging technology is characterized by the provision of a side gap of an empirically-predetermined width between the overlying chips mounted through COC technology over an underlying chip to serve as an air vent during molding process. This allows the injected molding material to flow freely into the flip-chip undergaps during molding process. In actual application, the exact width of the side gap is empirically predetermined through molded-underfill simulation experiments to find the optimal value. Based on experimental data, it is found that this side gap width should be equal to or less than 0.3 mm to allow optimal underfill effect. The optimal value for this side gap width may be varied for different package specifications.
Abstract:
A heat dissipating semiconductor package is disclosed, including a chip carrier; at least a semiconductor chip mounted and electrically connected to the chip carrier; and a heat dissipating member mounted on the semiconductor chip with a thermal interface material (TIM) interposed therebetween, wherein the TIM is provided with a plurality of fillers for supporting the TIM at an appropriate height, thereby preventing the TIM from being wetted so as to avoid collapsing and overflow of the TIM as a result of wetting problem.
Abstract:
A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.
Abstract:
A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in turn deposited over the dielectric material layer and solder materials, and the first and second copper layers are patterned to form a plurality of conductive traces each of which has a terminal coated with a metal layer. A chip is mounted on the conductive traces and electrically connected to the terminals by bonding wires, with the dielectric material layer and solder materials being exposed to the outside. This package structure can flexibly arrange the conductive traces and effectively shorten the bonding wires, thereby improve trace routability and quality of electrical connection for the semiconductor package.
Abstract:
A packaging substrate and a semiconductor package using the packaging substrate are provided. The packaging substrate includes: a substrate body having a die attach area, a circuit layer formed around the die attach area and having a plurality of conductive traces each having a wire bonding pad, and a surface treatment layer formed on the wire bonding pads. Therein, only one of the conductive traces is connected to an electroplating line so as to prevent cross-talk that otherwise occurs between conductive traces due to too many electroplating lines in the prior art.
Abstract:
The present invention discloses a flip-chip semiconductor package and a chip carrier thereof. The chip carrier includes a groove formed around a chip-mounting area. The groove may be formed along a periphery of the chip-mounting area or at corners thereof. The groove is filled with a filler of low Young's modulus so as to absorb and eliminate thermal stress, thereby preventing delamination between an underfill and a flip chip mounted on the chip-mounting area.
Abstract:
A semiconductor package substrate is provided, which includes a substrate body having a plurality of conductive through holes formed therein, wherein at least two adjacent conductive through holes are formed as a differential pair, each of which has a ball pad formed at an end thereof; and at least one electrically integrated layer formed in the substrate body, and having an opening corresponding to the two adjacent conductive through holes formed as the differential pair and the ball pads thereof. Thus, the spacing between the conductive through holes and the electrically integrated layer and the spacing between the ball pads can be enlarged by the opening, so as to balance the impedance match.
Abstract:
A semiconductor package and a substrate structure thereof are provided. A solder mask layer applied on the substrate structure is formed with outwardly extended openings corresponding to corner portions of a chip mounting area of the substrate structure. When a flip-chip semiconductor chip is mounted on the chip mounting area and an underfilling process is performed, an underfill material can fill a gap between the flip-chip semiconductor chip and the substrate structure, and effectively fill the outwardly extended openings of the solder mask layer corresponding to the corner portions of the chip mounting area so as to provide sufficient protection for corners of the flip-chip semiconductor chip and prevent delamination at the corners of the flip-chip semiconductor chip during a subsequent thermal cycle.
Abstract:
A high electrical performance semiconductor package is proposed. A carrier is provided having a first surface, an opposite second surface, and conductive vias for electrically connecting the first surface to the second surface. A chip is attached to the first surface of the carrier. A plurality of via lands are disposed peripherally on the first surface of the carrier and electrically connected to the vias. A plurality of conductive regions are disposed on the second surface of the carrier and electrically connected to the vias. A plurality of fingers are disposed around the chip and electrically connected to the via lands by conductive traces formed on the first surface of the carrier. A plurality of bonding wires electrically connect the chip to the fingers. Lengths of the wires for transmitting differential pair signals are substantially equal, and lengths of the traces for transmitting the differential pair signals are substantially equal.
Abstract:
A semiconductor package and a substrate structure thereof are provided. A solder mask layer applied on the substrate structure is formed with outwardly extended openings corresponding to corner portions of a chip mounting area of the substrate structure. When a flip-chip semiconductor chip is mounted on the chip mounting area and an underfilling process is performed, an underfill material can fill a gap between the flip-chip semiconductor chip and the substrate structure, and effectively fill the outwardly extended openings of the solder mask layer corresponding to the corner portions of the chip mounting area so as to provide sufficient protection for corners of the flip-chip semiconductor chip and prevent delamination at the corners of the flip-chip semiconductor chip during a subsequent thermal cycle.