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    FIELD EFFECT STRUCTURE AND METHOD INCLUDING SPACER SHAPED METAL GATE WITH ASYMMETRIC SOURCE AND DRAIN REGIONS
    32.
    发明申请
    FIELD EFFECT STRUCTURE AND METHOD INCLUDING SPACER SHAPED METAL GATE WITH ASYMMETRIC SOURCE AND DRAIN REGIONS 有权
    包括不对称源和漏区的间隔型金属门的场效应结构与方法

    公开(公告)号：US20090294873A1

    公开(公告)日：2009-12-03

    申请号：US12129033

    申请日：2008-05-29

    申请人： Huilong Zhu ,  Zhengwen Li

    发明人： Huilong Zhu ,  Zhengwen Li

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/66545 ,  H01L21/26586 ,  H01L21/2815 ,  H01L29/66659 ,  H01L29/7835

    摘要： A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device, such as a field effect transistor, that includes a spacer shaped metal gate located over a channel within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. Within the semiconductor structure, the plurality of source and drain regions is asymmetric with respect to the spacer shaped metal gate. The particular semiconductor structure may be fabricated using a self aligned dummy gate method that uses a portion of a spacer as a self alignment feature when forming the spacer shaped metal gate, which may have a sub-lithographic linewidth.

    摘要翻译： 半导体结构和半导体结构的制造方法提供场效应晶体管等场效应晶体管，该场效应晶体管包括位于半导体衬底内的通道之间的间隔金属栅极，该隔离物形金属栅极将多个源极和漏极区域分隔开， 半导体衬底。 在半导体结构内，多个源极和漏极区域相对于间隔物金属栅极是不对称的。 可以使用自对准的虚拟栅极方法来制造特定的半导体结构，该方法在形成可具有亚光刻线宽的间隔物金属栅极时，使用间隔物的一部分作为自对准特征。

    Bonded structure employing metal semiconductor alloy bonding
    35.
    发明授权
    Bonded structure employing metal semiconductor alloy bonding 有权
    使用金属半导体合金结合的结合结构

    公开(公告)号：US08841777B2

    公开(公告)日：2014-09-23

    申请号：US12685954

    申请日：2010-01-12

    申请人： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

    发明人： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

    IPC分类号： H01L21/48 ,  H01L21/52 ,  H01L21/40 ,  H01L21/20 ,  H01L27/06 ,  H01L21/768

    CPC分类号： H01L21/76841 ,  H01L21/2007 ,  H01L27/0688 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896

    摘要： Vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with vertical stacks of a metal portion and a semiconductor portion formed on a second substrate. Alternately, vertical stacks of a metal portion and a semiconductor portion formed on a first substrate are brought into physical contact with metal portions formed on a second substrate. The assembly of the first and second substrates is subjected to an anneal at a temperature that induces formation of a metal semiconductor alloy derived from the semiconductor portions and the metal portions. The first substrate and the second substrate are bonded through metal semiconductor alloy portions that adhere to the first and second substrates.

    摘要翻译： 形成在第一基板上的金属部分和半导体部分的垂直叠层与形成在第二基板上的金属部分和半导体部分的垂直叠层物理接触。 或者，形成在第一基板上的金属部分和半导体部分的垂直堆叠与形成在第二基板上的金属部分物理接触。 在引起由半导体部分和金属部分衍生的金属半导体合金的形成的温度下对第一和第二基板的组装进行退火。 第一基板和第二基板通过粘附到第一和第二基板的金属半导体合金部分接合。

    Efficiency in antireflective coating layers for solar cells
    36.
    发明授权
    Efficiency in antireflective coating layers for solar cells 有权
    太阳能电池抗反射涂层的效率

    公开(公告)号：US08723021B2

    公开(公告)日：2014-05-13

    申请号：US13416354

    申请日：2012-03-09

    申请人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

    发明人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

    IPC分类号： H01L31/032

    CPC分类号： G02B1/113 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell includes a substrate having an N-region and a P-region, a first anti-reflective layer disposed on the substrate, a metallic contact disposed on the first anti-reflective layer, a second anti-reflective layer disposed on the first anti-reflective layer and the metallic contact, and a region partially defined by the first anti-reflective layer and the second anti-reflective layer having diffused metallic contact material operative to form a conductive path to the substrate through the first anti-reflective layer, the metallic contact, and the second anti-reflective layer.

    摘要翻译： 太阳能电池包括具有N区和P区的衬底，设置在衬底上的第一抗反射层，设置在第一抗反射层上的金属触点，设置在第一抗反射层上的第二抗反射层 抗反射层和金属接触，以及由第一抗反射层和第二抗反射层局部限定的区域，其具有扩散的金属接触材料，其可操作以通过第一抗反射层形成到衬底的导电路径， 金属触点和第二抗反射层。

    Method for removing copper oxide layer
    38.
    发明授权
    Method for removing copper oxide layer 失效
    去除氧化铜层的方法

    公开(公告)号：US08444868B2

    公开(公告)日：2013-05-21

    申请号：US12695273

    申请日：2010-01-28

    申请人： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

    发明人： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

    IPC分类号： C23F1/00

    CPC分类号： H01L21/02074 ,  C23G5/00

    摘要： The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.

    摘要翻译： 本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为 由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

    Selectively self-assembling oxygen diffusion barrier
    39.
    发明授权
    Selectively self-assembling oxygen diffusion barrier 有权
    选择性地自组装氧扩散阻挡层

    公开(公告)号：US08410559B2

    公开(公告)日：2013-04-02

    申请号：US12407007

    申请日：2009-03-19

    申请人： Zhengwen Li ,  Antonio L. P. Rotondaro ,  Mark R. Visokay

    发明人： Zhengwen Li ,  Antonio L. P. Rotondaro ,  Mark R. Visokay

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/517 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/76224 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/518

    摘要： A shallow trench isolation structure is formed in a semiconductor substrate adjacent to an active semiconductor region. A selective self-assembling oxygen barrier layer is formed on the surface of the shallow trench isolation structure that includes a dielectric oxide material. The formation of the selective self-assembling oxygen barrier layer is selective in that it is not formed on the surface the active semiconductor region having a semiconductor surface. The selective self-assembling oxygen barrier layer is a self-assembled monomer layer of a chemical which is a derivative of alkylsilanes including at least one alkylene moiety. The silicon containing portion of the chemical forms polysiloxane, which is bonded to surface silanol groups via Si—O—Si bonds. The monolayer of the chemical is the selective self-assembling oxygen barrier layer that prevents diffusion of oxygen to a high dielectric constant material layer that is subsequently deposited as a gate dielectric.

    摘要翻译： 在与有源半导体区域相邻的半导体衬底中形成浅沟槽隔离结构。 在包括电介质氧化物材料的浅沟槽隔离结构的表面上形成选择性自组装氧阻挡层。 选择性自组装氧阻挡层的形成是选择性的，因为它不在具有半导体表面的有源半导体区域的表面上形成。 选择性自组装氧阻挡层是化学品的自组装单体层，其是包括至少一个亚烷基部分的烷基硅烷的衍生物。 化学式的含硅部分形成聚硅氧烷，其通过Si-O-Si键与表面硅烷醇基团键合。 化学品的单层是选择性自组装氧阻挡层，其防止氧扩散到随后沉积为栅极电介质的高介电常数材料层。