公开(公告)号：US20170250172A1

公开(公告)日：2017-08-31

申请号：US15431528

申请日：2017-02-13

Applicant: Semtech Corporation

Inventor： Changjun Huang ,  Jonathan Clark

IPC: H01L25/00 ,  H01L27/02 ,  H01L23/00 ,  H01L21/78 ,  H01L25/065 ,  H01L21/768

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/561 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/49575 ,  H01L23/60 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/85 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L27/0255 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/08146 ,  H01L2224/08148 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/17181 ,  H01L2224/2929 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/80203 ,  H01L2224/8082 ,  H01L2224/80895 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/8182 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/1203 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/01082 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/80 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

公开(公告)号：US09613930B2

公开(公告)日：2017-04-04

申请号：US14064093

申请日：2013-10-25

Applicant: Infineon Technologies AG

Inventor： Petteri Palm

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/538 ,  H01L21/48 ,  H01L23/29 ,  H01L21/56 ,  H01L23/498

CPC classification number: H01L24/89 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L23/295 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/09 ,  H01L24/24 ,  H01L24/31 ,  H01L24/32 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/05018 ,  H01L2224/08112 ,  H01L2224/08137 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/80031 ,  H01L2224/80488 ,  H01L2224/80801 ,  H01L2224/8082 ,  H01L2224/8085 ,  H01L2224/80904 ,  H01L2224/8203 ,  H01L2224/83005 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/83851 ,  H01L2224/83889 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip and the second semiconductor chip are arranged such that the first face of the first semiconductor chip faces in a first direction and the first face of the second semiconductor chip faces in a second direction opposite to the first direction. The first semiconductor chip is located laterally outside of an outline of the second semiconductor chip.

公开(公告)号：US20240304600A1

公开(公告)日：2024-09-12

申请号：US18596213

申请日：2024-03-05

Applicant: Infineon Technologies Austria AG

Inventor： Shalini Jakanadan ,  Guenther Koffler ,  Huat Chye Lim ,  Seng Yeong Ooi

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/14 ,  H01L25/18

CPC classification number: H01L25/0657 ,  H01L23/14 ,  H01L24/80 ,  H01L25/18 ,  H01L2224/80411 ,  H01L2224/80416 ,  H01L2224/80455 ,  H01L2224/8082 ,  H01L2924/1203 ,  H01L2924/13055

Abstract: A method for fabricating a semiconductor device includes: providing a substrate layer stack including a substrate with a metallic upper surface, a first Ni containing layer disposed on the substrate, and a first Sn layer on the first Ni containing layer; depositing a first semiconductor layer stack on the first Sn layer and that includes a first NiP layer, a first semiconductor die disposed on the first NiP layer, and a second NiP layer disposed on the first semiconductor die; depositing a second semiconductor layer stack on the first semiconductor layer stack and that includes a second Sn layer, a second Ni containing layer disposed on the second Sn layer, and a second semiconductor die disposed on the second Ni containing layer; and performing a diffusion soldering process for connecting the first semiconductor layer stack to the substrate and the second semiconductor layer stack to the first semiconductor layer stack.

公开(公告)号：US20230360950A1

公开(公告)日：2023-11-09

申请号：US17662180

申请日：2022-05-05

Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

Inventor： Guilian Gao

IPC: H01L21/683 ,  H01L23/00

CPC classification number: H01L21/6838 ,  H01L21/6833 ,  H01L24/80 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2224/8018 ,  H01L2224/8082 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/80009 ,  H01L24/08 ,  H01L2224/08225 ,  H01L24/05 ,  H01L2224/05647

Abstract: Embodiments of various systems, methods, and devices for gang flipping and individual picking dies are disclosed. The embodiments disclosed herein may be used, for example, in the manufacture of directly bonded devices.

公开(公告)号：US20140239458A1

公开(公告)日：2014-08-28

申请号：US14268116

申请日：2014-05-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

IPC: H01L23/538

CPC classification number: H01L23/5384 ,  B32B3/085 ,  B32B7/12 ,  B32B15/20 ,  B32B27/283 ,  B32B2307/20 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/704 ,  B32B2307/732 ,  B32B2457/14 ,  C22C9/00 ,  C23C14/48 ,  H01L23/481 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/80357 ,  H01L2224/8082 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/838 ,  H01L2224/8382 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  Y10T428/12472 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal. Ions are implanted into the first and second bonding material layers to induce structural damages in the in the first and second bonding material layers. The first and second substrates are bonded by forming a physical contact between the first and second bonding material layers. The structural damages in the first and second bonding material layers enhance diffusion of materials across the interface between the first and second bonding material layers to form a bonded material layer in which metal grains are present across the bonding interface, thereby providing a high adhesion strength across the first and second substrates.

Abstract translation: 在第一基板上形成第一接合材料层，在第二基板上形成第二接合材料层。 第一和第二接合材料层包括金属。 将离子注入到第一和第二接合材料层中以在第一和第二接合材料层中引起结构损伤。 第一和第二基板通过在第一和第二接合材料层之间形成物理接触来结合。 在第一和第二接合材料层中的结构损伤增强了材料在第一和第二接合材料层之间的界面上的扩散，以形成结合材料层，其中金属颗粒存在于结合界面上，由此提供了高粘合强度 第一和第二基板。

公开(公告)号：US08338231B2

公开(公告)日：2012-12-25

申请号：US12749192

申请日：2010-03-29

Applicant: Georg Meyer-Berg

Inventor： Georg Meyer-Berg

IPC: H01L29/66

CPC classification number: H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/80 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08238 ,  H01L2224/08245 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/16145 ,  H01L2224/80006 ,  H01L2224/80815 ,  H01L2224/8082 ,  H01L2224/8084 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15331 ,  H01L2224/80 ,  H01L2924/00

Abstract: A method includes providing a carrier; applying a dielectric layer to the carrier; applying a metal layer to the dielectric layer; placing a first semiconductor chip on the metal layer with contact pads of the first semiconductor chip facing the metal layer; covering the first semiconductor chip with an encapsulation material; and removing the carrier.

Abstract translation: 一种方法包括提供载体; 将介电层施加到载体上; 将金属层施加到介电层上; 将第一半导体芯片放置在金属层上，其中第一半导体芯片的接触焊盘面向金属层; 用封装材料覆盖第一半导体芯片; 并移除载体。

公开(公告)号：US20110233754A1

公开(公告)日：2011-09-29

申请号：US12749192

申请日：2010-03-29

Applicant: Georg Meyer-Berg

Inventor： Georg Meyer-Berg

IPC: H01L23/488 ,  H01L21/56 ,  H01L21/60

CPC classification number: H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/5389 ,  H01L24/08 ,  H01L24/80 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/08238 ,  H01L2224/08245 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/16145 ,  H01L2224/80006 ,  H01L2224/80815 ,  H01L2224/8082 ,  H01L2224/8084 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15331 ,  H01L2224/80 ,  H01L2924/00

Abstract: A method includes providing a carrier; applying a dielectric layer to the carrier; applying a metal layer to the dielectric layer; placing a first semiconductor chip on the metal layer with contact pads of the first semiconductor chip facing the metal layer; covering the first semiconductor chip with an encapsulation material; and removing the carrier.

Abstract translation: 一种方法包括提供载体; 将介电层施加到载体上; 将金属层施加到介电层上; 将第一半导体芯片放置在金属层上，其中第一半导体芯片的接触焊盘面向金属层; 用封装材料覆盖第一半导体芯片; 并移除载体。

公开(公告)号：US20080116584A1

公开(公告)日：2008-05-22

申请号：US11602536

申请日：2006-11-21

Applicant: Arkalgud Sitaram

Inventor： Arkalgud Sitaram

IPC: H01L23/538 ,  H01L21/58

CPC classification number: H01L25/0657 ,  H01L24/02 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/08121 ,  H01L2224/80986 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/80896 ,  H01L2224/8082

Abstract: An electronic component includes a first component and a second component, each having a surface that includes a plurality of exposed contacts separated by an insulating material. A sandwich layer is disposed between the surface of the first component and the surface of the second component. The surface of the first component is then attached to the surface of the second component with the sandwich layer therebetween. The sandwich layer forms conductive areas between contacts of the first component and contacts of the second component and forms an insulator between the conductive areas.

Abstract translation: 电子部件包括第一部件和第二部件，每个部件具有包括被绝缘材料隔开的多个暴露的触头的表面。 在第一部件的表面和第二部件的表面之间设置夹层。 然后将第一组分的表面附着在第二组分的表面上，其间具有夹层。 夹层在第一部件的触点和第二部件的触点之间形成导电区域，并在导电区域之间形成绝缘体。

公开(公告)号：US09159674B2

公开(公告)日：2015-10-13

申请号：US14268116

申请日：2014-05-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

IPC: H01L23/538 ,  B32B15/20 ,  H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  C23C14/48 ,  C22C9/00

CPC classification number: H01L23/5384 ,  B32B3/085 ,  B32B7/12 ,  B32B15/20 ,  B32B27/283 ,  B32B2307/20 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/704 ,  B32B2307/732 ,  B32B2457/14 ,  C22C9/00 ,  C23C14/48 ,  H01L23/481 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/80357 ,  H01L2224/8082 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/838 ,  H01L2224/8382 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  Y10T428/12472 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal. Ions are implanted into the first and second bonding material layers to induce structural damages in the in the first and second bonding material layers. The first and second substrates are bonded by forming a physical contact between the first and second bonding material layers. The structural damages in the first and second bonding material layers enhance diffusion of materials across the interface between the first and second bonding material layers to form a bonded material layer in which metal grains are present across the bonding interface, thereby providing a high adhesion strength across the first and second substrates.

Abstract translation: 在第一基板上形成第一接合材料层，在第二基板上形成第二接合材料层。 第一和第二接合材料层包括金属。 将离子注入到第一和第二接合材料层中以在第一和第二接合材料层中引起结构损伤。 第一和第二基板通过在第一和第二接合材料层之间形成物理接触来结合。 在第一和第二接合材料层中的结构损伤增强了材料在第一和第二接合材料层之间的界面上的扩散，以形成结合材料层，其中金属颗粒存在于结合界面上，由此提供了高粘合强度 第一和第二基板。

公开(公告)号：US08748288B2

公开(公告)日：2014-06-10

申请号：US12700813

申请日：2010-02-05

Applicant: Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

Inventor： Mukta G. Farooq ,  Zhengwen Li ,  Zhijiong Luo ,  Huilong Zhu

IPC: H01L23/48

CPC classification number: H01L23/5384 ,  B32B3/085 ,  B32B7/12 ,  B32B15/20 ,  B32B27/283 ,  B32B2307/20 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/704 ,  B32B2307/732 ,  B32B2457/14 ,  C22C9/00 ,  C23C14/48 ,  H01L23/481 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/80357 ,  H01L2224/8082 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/838 ,  H01L2224/8382 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  Y10T428/12472 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal. Ions are implanted into the first and second bonding material layers to induce structural damages in the in the first and second bonding material layers. The first and second substrates are bonded by forming a physical contact between the first and second bonding material layers. The structural damages in the first and second bonding material layers enhance diffusion of materials across the interface between the first and second bonding material layers to form a bonded material layer in which metal grains are present across the bonding interface, thereby providing a high adhesion strength across the first and second substrates.

Abstract translation: 在第一基板上形成第一接合材料层，在第二基板上形成第二接合材料层。 第一和第二接合材料层包括金属。 将离子注入到第一和第二接合材料层中以在第一和第二接合材料层中引起结构损伤。 第一和第二基板通过在第一和第二接合材料层之间形成物理接触来结合。 在第一和第二接合材料层中的结构损伤增强了材料在第一和第二接合材料层之间的界面上的扩散，以形成结合材料层，其中金属颗粒存在于结合界面上，由此提供了高粘合强度 第一和第二基板。