公开(公告)号：US20110209995A1

公开(公告)日：2011-09-01

申请号：US12823893

申请日：2010-06-25

申请人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

发明人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

IPC分类号： C23C14/34

CPC分类号： H01J37/3444 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3438

摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

摘要翻译： 提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。 该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机 旋转，以及连接到基座的可变电容器的输出。 可变电容器的期望状态与过程控制器中的过程配方相关联。 当执行处理配方时，将可变电容器置于所需状态。

公开(公告)号：US07846310B2

公开(公告)日：2010-12-07

申请号：US11610075

申请日：2006-12-13

申请人： Andrew Gillard ,  Anthony Vesci ,  Keith A. Miller

发明人： Andrew Gillard ,  Anthony Vesci ,  Keith A. Miller

IPC分类号： C23C14/35

CPC分类号： H01J37/3266 ,  H01F7/128 ,  H01F7/20 ,  H01F27/16 ,  H01J37/32623 ,  H01J37/3458 ,  H01J37/347 ,  Y10T29/4902

摘要： A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooling coil may also be captured in the encapsulant between the electromagnetic coils. The structure may additionally include water fittings, locating pins, through tubes for chamber bolts, and lifting brackets.

摘要翻译： 一种电磁体阵列结构，其包括捕获在例如固化环氧树脂的刚性密封剂中的多个电磁线圈，以形成可放置在等离子体处理室的壁周围的整体式独立结构。 液体冷却盘管也可以被捕获在电磁线圈之间的密封剂中。 该结构还可以包括水配件，定位销，通过用于室螺栓的管和提升支架。

公开(公告)号：US07670436B2

公开(公告)日：2010-03-02

申请号：US10981261

申请日：2004-11-03

申请人： Keith A. Miller ,  Ilya Lavitsky

发明人： Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68735 ,  C23C14/50 ,  H01J37/32642 ,  H01L21/68721 ,  Y10S156/915

摘要： A substrate ring assembly is provided for a substrate support having a peripheral edge. The assembly has an annular band having an inner perimeter that surrounds and at least partially covers the peripheral edge of the substrate support. The assembly also has a clamp to secure the annular band to the peripheral edge of the substrate support.

摘要翻译： 为具有外围边缘的基板支撑件提供基板环组件。 组件具有环形带，其具有围绕并且至少部分地覆盖衬底支撑件的周边边缘的内周边。 组件还具有用于将环形带固定到基板支撑件的周边边缘的夹具。

公开(公告)号：US07569125B2

公开(公告)日：2009-08-04

申请号：US11124524

申请日：2005-05-05

申请人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C14/35

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.

摘要翻译： 可用于等离子体溅射反应器的一体式内屏蔽件，并且从目标件延伸到具有光滑内表面的基座并由屏蔽件的中间部分中的环形凸缘支撑。 屏蔽可用于支持用于激发等离子体的RF线圈。 外屏蔽件包括在其与内屏蔽凸缘对准的端部上的向外延伸的凸缘，对应于用于RF线圈的支架的内屏蔽件中的凹部的孔和周向布置的气体流动孔。

公开(公告)号：US07041201B2

公开(公告)日：2006-05-09

申请号：US10608306

申请日：2003-06-26

申请人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C14/35

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

摘要翻译： 本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。 因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。 当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。 本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。 屏蔽可用于支持RF线圈。

公开(公告)号：US07018515B2

公开(公告)日：2006-03-28

申请号：US10949735

申请日：2004-09-23

申请人： Tza-Jing Gung ,  Hong S. Yang ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Keith A. Miller ,  Vincent E. Burkhart

发明人： Tza-Jing Gung ,  Hong S. Yang ,  Anantha K. Subramani ,  Maurice E. Ewert ,  Keith A. Miller ,  Vincent E. Burkhart

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

摘要翻译： 一种双位磁控管，其围绕溅射靶的背面的中心轴旋转，特别是用于将阻挡材料的靶的边缘溅射到晶片上，并且清理物质再沉积在靶的中心。 在目标清洁期间，晶片偏置减小。 在一个实施例中，弧形磁控管被支撑在枢转臂上，枢转臂在固定到旋转轴的支架的端部上枢转。 弹簧偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上方。 提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。 机械停止可防止任何方向上的过度运动。 其他机构包括线性滑块和致动器。

公开(公告)号：US20170219219A1

公开(公告)日：2017-08-03

申请号：US15012047

申请日：2016-02-01

申请人： Keith A. Miller ,  Marjorie S. Miller

发明人： Keith A. Miller ,  Marjorie S. Miller

IPC分类号： F24D19/10 ,  G05B19/042 ,  F24D3/02

CPC分类号： F24D19/1012 ,  F24D3/02 ,  F24D19/1048 ,  F24D2200/04 ,  F24D2220/02 ,  F24D2220/042 ,  F24D2220/044 ,  G05B19/042 ,  G05B2219/2614 ,  G05D23/1931 ,  Y02B30/745

摘要： A demand based control for a hydronic heating system varies the heat response based on an actual demand of the conditioned space, rather than an estimated thermal loss. Differences between supply and return of a heat transfer medium, such as forced hot water, are measured for the conditioned space, as well as the flow rate of the forced water to determine an actual thermal transfer to the conditioned space. A required heat generation is computed based on the measured transfer and resultant temperature change of the conditioned space, and heat generation parameters such as boiler firing rate and circulator pump speed varied to control the heat transfer to the conditioned space and avoid overshoot or excessive heat generation beyond that needed for the measured demand.

公开(公告)号：US08911601B2

公开(公告)日：2014-12-16

申请号：US13280771

申请日：2011-10-25

申请人： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

发明人： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00 ,  B05C13/00 ,  B05C13/02 ,  B05C21/00 ,  C23C16/00 ,  C23C14/34 ,  C23C16/458 ,  C23C14/50 ,  C23C14/56 ,  H01L21/687

CPC分类号： C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

公开(公告)号：US08702918B2

公开(公告)日：2014-04-22

申请号：US13327689

申请日：2011-12-15

申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

IPC分类号： C23C14/56

CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US08696878B2

公开(公告)日：2014-04-15

申请号：US13457441

申请日：2012-04-26

申请人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

发明人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

IPC分类号： C25B9/00 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  B05C11/11 ,  C23C16/00 ,  C23C16/458 ,  C23C14/34 ,  C23C14/50 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C16/4585 ,  C23C14/34 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3408 ,  H01J37/3441

摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。