公开(公告)号：US10461155B2

公开(公告)日：2019-10-29

申请号：US15811990

申请日：2017-11-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yoong Hooi Yong ,  Yanping Shen ,  Hsien-Ching Lo ,  Xusheng Wu ,  Joo Tat Ong ,  Wei Hong ,  Yi Qi ,  Dongil Choi ,  Yongjun Shi ,  Alina Vinslava ,  James Psillas ,  Hui Zang

IPC: H01L29/08 ,  H01L27/092 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165

Abstract: A semiconductor structure including a source/drain region is disclosed. The source/drain region may include a first epitaxial region along at least one sidewall of the source/drain region having a substantially uniform sidewall thickness. The semiconductor structure may further include a gate structure adjacent and above the source/drain region wherein at least a portion of the first epitaxial region is positioned below a sidewall spacer of the gate structure. A method of forming a source/drain region including a first epitaxial region having a substantially uniform sidewall thickness is disclosed. The method may include forming a trench in a substrate adjacent to a gate structure, forming the first epitaxial region in the trench, forming a spacer material layer on the gate structure and on a portion of the first epitaxial region, and removing a portion of the first epitaxial region using the spacer material layer as a mask.

公开(公告)号：US20190312117A1

公开(公告)日：2019-10-10

申请号：US15949730

申请日：2018-04-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yi Qi ,  Hsien-Ching Lo ,  Hong Yu ,  Yanping Shen ,  Wei Hong ,  Xing Zhang ,  Ruilong Xie ,  Haiting Wang ,  Hui Zhan ,  Yong Jun Shi

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/08 ,  H01L29/45 ,  H01L21/306 ,  H01L29/66 ,  H01L21/02

Abstract: One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

公开(公告)号：US10410929B2

公开(公告)日：2019-09-10

申请号：US15860840

申请日：2018-01-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui Zang ,  Jianwei Peng ,  Yi Qi ,  Hsien-Ching Lo ,  Jerome Ciavatti ,  Ruilong Xie

IPC: H01L21/336 ,  H01L21/8234 ,  H01L29/08 ,  H01L27/088 ,  H01L29/66 ,  H01L21/20

Abstract: A method of manufacturing a vertical fin field effect transistor includes forming a first fin in a first device region of a substrate, forming a second fin in a second device region of the substrate, and forming a sacrificial gate having a first gate length adjacent to the first and second fins. After forming a block mask over the sacrificial gate within the first device region, a deposition step or an etching step is used to increase or decrease the gate length of the sacrificial gate within the second device region. Top source/drain junctions formed over the fins are self-aligned to the gate in each of the first and second device regions.

公开(公告)号：US10388652B2

公开(公告)日：2019-08-20

申请号：US15811961

申请日：2017-11-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yongiun Shi ,  Lei Sun ,  Laertis Economikos ,  Ruilong Xie ,  Lars Liebmann ,  Chanro Park ,  Daniel Chanemougame ,  Min Gyu Sung ,  Hsien-Ching Lo ,  Haiting Wang

IPC: H01L27/088 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L27/02 ,  H01L21/762 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/027

Abstract: The disclosure provides integrated circuit (IC) structures with single diffusion break (SDB) abutting end isolation regions, and methods of forming the same. An IC structure may include: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on the plurality of fins and laterally between the plurality of gate structures; at least one single diffusion break (SDB) positioned within the insulator region and one of the plurality of fins, the at least one SDB region extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region abutting a lateral end of the at least one SDB along a length of the plurality of gate structures, the end isolation region extending substantially in parallel with the plurality of fins.

公开(公告)号：US20190181243A1

公开(公告)日：2019-06-13

申请号：US16276045

申请日：2019-02-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alina Vinslava ,  Hsien-Ching Lo ,  Yongjun Shi ,  Jianwei Peng ,  Jianghu Yan ,  Yi Qi

IPC: H01L29/66 ,  H01L21/84 ,  H01L29/08 ,  H01L29/78 ,  H01L29/165 ,  H01L29/16 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/161

Abstract: Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region in a semiconductor fin. The semiconductor fin is etched with a first etching process to form a first cavity extending into the semiconductor fin adjacent to the channel region. The semiconductor fin is etched with a second etching process to form a second cavity that is volumetrically smaller than the first cavity and that adjoins the first cavity.

公开(公告)号：US20190131432A1

公开(公告)日：2019-05-02

申请号：US15795833

申请日：2017-10-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yi Qi ,  Sang Woo Lim ,  Kyung-Bum Koo ,  Alina Vinslava ,  Pei Zhao ,  Zhenyu Hu ,  Hsien-Ching Lo ,  Joseph F. Shepard, JR. ,  Shesh Mani Pandey

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/3065 ,  H01L21/845 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region beneath a top surface of a semiconductor fin. The semiconductor fin is etched with an anisotropic etching process to form a cavity having a sidewall with a planar section extending vertically toward the top surface of the semiconductor fin and adjacent to the channel region in the semiconductor fin. The semiconductor fin is then etched with an isotropic etching process that widens the cavity at the top surface while preserving verticality of the planar section.

公开(公告)号：US10276689B2

公开(公告)日：2019-04-30

申请号：US15615925

申请日：2017-06-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yi Qi ,  Jianwei Peng ,  Hsien-Ching Lo ,  Ruilong Xie ,  Xunyuan Zhang ,  Hui Zang

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/78

Abstract: Disclosed are embodiments of an improved method for forming a vertical field effect transistor (VFET). In each of the embodiments of the method, a semiconductor fin is formed sufficiently thick (i.e., wide) so that the surface area of the top of the semiconductor fin is sufficiently large to facilitate epitaxial growth thereon of a semiconductor material for a second source/drain region. As a result, the second source/drain region will be sufficiently large to avoid potential contact-related defects (e.g., unlanded contacts, complete silicidation of second source/drain region during contact formation, etc.). Additionally, either before or after this second source/drain region is formed, at least the center portion of the semiconductor fin, which will include the channel region of the VFET, is thinned down to a desired critical dimension for optimal VFET performance. Also disclosed are VFET structure embodiments resulting from this method.

公开(公告)号：US20190103319A1

公开(公告)日：2019-04-04

申请号：US15723472

申请日：2017-10-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yi Qi ,  Hsien-Ching Lo ,  Jianwei Peng ,  Wei Hong ,  Yanping Shen ,  Yongjun Shi ,  Hui Zang ,  Ruilong Xie ,  Kangguo Cheng ,  Tenko Yamashita ,  Chun-chen Yeh

IPC: H01L21/8234 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/088

Abstract: Disclosed is a method of forming a structure with multiple vertical field effect transistors (VFETs). In the method, lower source/drain regions are formed on a substrate such that semiconductor fins extend vertically above the lower source/drain regions. Lower spacers are formed on the lower source/drain regions and positioned laterally adjacent to the semiconductor fins. Gates, having co-planar top surfaces, are formed on the lower spacers and positioned laterally adjacent to the semiconductor fins. However, process steps are performed prior to gate formation to ensure that the top surfaces of the lower source/drain region and lower spacer of a first VFET are below the levels of the top surfaces of the lower source/drain region and lower spacer, respectively, of a second VFET. As a result, the first VFET will have a longer gate, higher threshold voltage and lower switching speed. Also disclosed is the structure formed according to the method.

公开(公告)号：US10249538B1

公开(公告)日：2019-04-02

申请号：US15723472

申请日：2017-10-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yi Qi ,  Hsien-Ching Lo ,  Jianwei Peng ,  Wei Hong ,  Yanping Shen ,  Yongjun Shi ,  Hui Zang ,  Ruilong Xie ,  Kangguo Cheng ,  Tenko Yamashita ,  Chun-chen Yeh

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/3213 ,  H01L21/311

Abstract: Disclosed is a method of forming a structure with multiple vertical field effect transistors (VFETs). In the method, lower source/drain regions are formed on a substrate such that semiconductor fins extend vertically above the lower source/drain regions. Lower spacers are formed on the lower source/drain regions and positioned laterally adjacent to the semiconductor fins. Gates, having co-planar top surfaces, are formed on the lower spacers and positioned laterally adjacent to the semiconductor fins. However, process steps are performed prior to gate formation to ensure that the top surfaces of the lower source/drain region and lower spacer of a first VFET are below the levels of the top surfaces of the lower source/drain region and lower spacer, respectively, of a second VFET. As a result, the first VFET will have a longer gate, higher threshold voltage and lower switching speed. Also disclosed is the structure formed according to the method.

公开(公告)号：US10163635B1

公开(公告)日：2018-12-25

申请号：US15797794

申请日：2017-10-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yi Qi ,  Hui Zang ,  Hsien-Ching Lo ,  Jerome Ciavatti ,  Judson Robert Holt

IPC: H01L21/033 ,  H01L29/06 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L29/861 ,  H01L29/78 ,  H01L49/02

Abstract: A method for preventing epitaxial merge between adjacent devices of a semiconductor is provided. Embodiments include forming a protection layer over a spacer formed over a first and second plurality of fins deposited within a substrate; pinching off a portion of the protection layer formed within a space between each of the plurality of fins; forming a planarization layer over the protection layer and the spacer; and etching a portion of the spacer to form inner sidewalls between each of the plurality of fins, outer sidewalls of a height greater than the height of the inner sidewalls for preventing the growth of the epitaxial layer beyond the outer sidewalls, or a combination thereof.