摘要:
A frequency divider wherein an output from a crystal oscillating circuit comprising a crystal oscillating element and an inverter connected in parallel therewith is sent forth as a one-phase oscillation pulse for frequency division from the input or output side of the inverter to the .phi. input terminal of a counter formed of a plurality of insulated gate field effect transistors (hereinafter abbreviated "IGFET's"). The counter comprises a plurality of cascade-connected complementary unit circuits each consisting of a series circuit of IGFET's connected between power supply terminals with IGFET's disposed on one side of an imaginary border line connecting the input and output terminals of said complementary unit circuit chosen to have a different channel type from those provided on the other side of said border line, and wherein at least the first and last complementary unit circuits' IGFET's are provided in different numbers on both sides of said border line. A one-phase pulse from the crystal oscillating circuit is supplied to the gate electrodes of the prescribed different IGFET's constituting the plural complementary unit circuits, and an output from the last complementary unit circuit of the counter is conducted to the gate electrodes of the prescribed different IGFET's constituting the other complementary unit circuits.
摘要:
An integrated circuit for a programmable television receiver comprises a memory for storing a plurality of programs, a digital clock and a character generating circuit for generating character signals for displaying the programs in the memory and/or time of the digital clock on the screen of a television receiver. The integrated circuit uses dynamic circuits to reduce the number of elements required, and CMOS transistors to attain a lower power dissipation.
摘要:
A counter comprises a cascade connection of an inverter stage and n one-bit shift register stages, the latter being operative in response to clock signals to be counted and each having a data-readin or front half-bit shift register stage and a data-readout or rear half-bit shift register stage. The output of the final stage in the cascade connection is coupled to the input of the first stage in the cascade connection. The output of the final stage is also coupled to an additional input of consecutive 1st to X-th shift register stages or consecutive 2nd to (X-1)-th shift register stages of an X-th shift register stage to constitute a scale-of-2n-X or 2n-(X-1) counter.
摘要:
In a nonvolatile semiconductor memory according to the invention, a power source voltage of 5 V used in an ordinary read mode is applied to a read line in the data read mode without changing its value. If a write line, a selection gate line, a control gate line, and a read line are respectively set at 0 V, 5 V, 0 V, and 5 V in the data read mode, the potential at an n-type diffusion layer becomes 0 V. In this case, the potential at the control gate line is 0 V, and the potential at a floating gate electrode becomes substantially 0 V. That is, an electric field is not applied to a thin insulating film located between the floating gate electrode and the n-type diffusion layer. As a result, electron injection and discharge due to the tunnel effect do not occur.
摘要:
A CR oscillation circuit is provided which includes inverters which are connected in series and whose operating current paths between a power source terminal and a ground terminal are connected in series with a constant current source. In certain embodiments, a resistor is connected between the output terminal of one inverter and the input terminal of the first inverter, and a capacitor is connected between the output terminal of another inverter and the input terminal of the first inverter. The CR oscillation circuit further has a constant current source connected in series with the operating current path of said inverters between the power source terminal and the ground terminal. In other embodiments, the resistor and capacitor are connected in parallel and to the input of an inverter.
摘要:
An integrated circuit wherein a gate circuit is provided on a bus line mounted on a semiconductor substrate. The gate circuit is used to separate an unused circuit block from other circuit blocks which are connected to a bus line through an input-output circuit for high speed data transmission, thereby reducing a parasitic capacity which might be imparted to the bus line by the separated circuit block. The input-output circuit is formed of a clocked inverter. The gate circuit is formed of a C.multidot.MOS transmission gate. The input-output circuit and gate circuit are so connected that where the gate of the inverter is opened, then the C.multidot.MOS transmission gate is closed; and where the gate of the inverter is closed, then the C.multidot.MOS transmission gate is opened.
摘要:
A phase detector circuit having four dominant type flip-flop circuits and at least one logic gate. The phase detector circuit is responsive to changes of two input signals, and produces output signals related to the relative phase of the input signals having duty cycle. The output signals have a predetermined level only for the period the phases of the input signals differ. When the phases of the input signals are the same, the output signals of the phase detector circuit will be at another level.
摘要:
A plurality of signal lines receiving signals with different phases are connected to the reference potential point through switching elements. The switching elements connected to signal lines other than the signal line receiving an active signal are rendered conductive by the active signal on the signal line and the other signal lines are led to the reference potential.
摘要:
A constant-voltage circuit in which a diode and an MOS transistor are connected in series between power supply terminals between which a battery power source is connected. The MOS transistor is biased to operate in the saturation region. The forward voltage drop across the diode is kept substantially constant independent of variations in battery voltage and temperature. This constant-voltage circuit may preferably be used in a battery checker circuit for detecting the end of battery life.
摘要:
An output circuit is provided in which a first IG-FET of a first conductivity type is connected between a first potential supply terminal and an output terminal and having its substrate controlled by a third potential higher than the first potential of the first potential supply terminal and a second IG-FET of a second conductivity type connected between a second potential supply terminal having a second potential lower than the first potential and the output terminal and having its substrate electrode supplied with the second potential. A control circuit is further provided which receives an input signal and control signal and controls the output circuit to permit the latter to produce one of the first potential, second potential and high impedance state. The output circuit and control circuit are combined to provide a converter circuit for converting the level of a CML (complementary MOS Transistor Logic) to a TTL (Transistor-Transistor Logic). A compensation circuit is further provided which, when a potential on the output terminal is shifted from the second potential to the first potential, permits a rise of the second potential to be sharpened. The compensation circuit includes a third IG-FET of a second conductivity type connected between the first potential supply terminal and the output terminal.