公开(公告)号：US20090236708A1

公开(公告)日：2009-09-24

申请号：US12474107

申请日：2009-05-28

申请人： Lei Shi ,  Ming Sun ,  Kai Liu

发明人： Lei Shi ,  Ming Sun ,  Kai Liu

IPC分类号： H01L23/495 ,  H01L23/34

CPC分类号： H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metallized source contacts. A bridged source plate interconnection has a bridge portion, valley portions disposed on either side of the bridge portion, plane portions disposed on either side of the valley portions and the bridge portion, and a connection portion depending from one of the plane portions, the bridged source plate interconnection connecting the source lead with the plurality of metallized source contacts. The bridge portion is disposed in a plane above the plane of the valley portions while the plane portions are disposed in a plane intermediate the plane of the bridge portion and the plane of the valley portions.

摘要翻译： 公开了半导体封装。 封装包括具有漏极，源极和栅极引线的引线框架，以及耦合到引线框架的半导体管芯，半导体管芯具有多个金属化源极触点。 桥接源极板互连具有桥接部分，设置在桥接部分的任一侧上的谷部分，设置在谷部分和桥接部分两侧的平面部分以及从平面部分之一悬挂的连接部分， 将源极引线与多个金属化源触点连接的源极板互连。 桥面部分设置在平坦部分的平面上方的平面中，而平面部分设置在桥接部分的平面和谷部的平面之间的平面中。

公开(公告)号：US20090160045A1

公开(公告)日：2009-06-25

申请号：US11963690

申请日：2007-12-21

申请人： Ming Sun ,  Tao Feng ,  Francois Hebert ,  Yueh-Se Ho

发明人： Ming Sun ,  Tao Feng ,  Francois Hebert ,  Yueh-Se Ho

IPC分类号： H01L23/06 ,  H01L21/304

CPC分类号： H01L21/6835 ,  H01L21/568 ,  H01L24/02 ,  H01L24/11 ,  H01L24/17 ,  H01L2221/68354 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00

摘要： A method for making back-to-front electrical connections in a wafer level chip scale packaging process is disclosed. A wafer containing a plurality of semiconductor chips is mounted on a package substrate. Each semiconductor chip in the plurality includes one or more electrodes on an exposed back side. Scribe lines between two or more adjacent chips on the wafer are removed to form relatively wide gaps. A conductive material is applied to the back side of the semiconductor chips and in the gaps. The conductive material in the gaps between two or more of the chips is then cut through leaving conductive material on the back side and on side walls of the two or more chips. As a result, the conductive material provides an electrical connection from the electrode on the back side of the chip to the front side of the chip.

摘要翻译： 公开了一种用于在晶片级芯片级封装工艺中进行背对背电连接的方法。 将包含多个半导体芯片的晶片安装在封装基板上。 多个半导体芯片包括暴露背面的一个或多个电极。 去除晶片上的两个或更多个相邻芯片之间的划痕线以形成较宽的间隙。 将导电材料施加到半导体芯片的背面和间隙中。 然后通过在两个或更多个芯片的背侧和侧壁上留下导电材料来切割两个或更多个芯片之间的间隙中的导电材料。 结果，导电材料提供从芯片的背面上的电极到芯片的前侧的电连接。

公开(公告)号：US20090057869A1

公开(公告)日：2009-03-05

申请号：US11849160

申请日：2007-08-31

申请人： Francois Hebert ,  Xiaotian Zhang ,  Kai Liu ,  Ming Sun ,  Anup Bhalla

发明人： Francois Hebert ,  Xiaotian Zhang ,  Kai Liu ,  Ming Sun ,  Anup Bhalla

IPC分类号： H01L23/52

CPC分类号： H01L24/41 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L25/072 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01055 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/37099 ,  H01L2924/206

摘要： A circuit package assembly is disclosed. The assembly includes a conductive substrate; a high-side n-channel metal oxide semiconductor field effect transistor (NMOSFET) having a source on a side facing a surface of the conductive substrate and in electrical contact therewith and a low-side standard n-channel metal oxide semiconductor field effect transistor (NMOSFET) having a drain on a side facing the conductive substrate and in electrical contact therewith. Co-packaging of high-side and low-side NMOSFETs in this manner may reduce package size and parasitic inductance and capacitance compared to conventional packaging.

摘要翻译： 公开了电路封装组件。 组件包括导电基板; 具有在与导电基板的表面相对并与其电接触的一侧具有源极的高边n沟道金属氧化物半导体场效应晶体管（NMOSFET）和低侧标准n沟道金属氧化物半导体场效应晶体管（ NMOSFET），其在面向导电基板的一侧具有漏极并与其电接触。 与传统封装相比，以这种方式共同封装高边和低边NMOSFET可以减小封装尺寸和寄生电感和电容。

公开(公告)号：US07498429B2

公开(公告)日：2009-03-03

申请号：US12027011

申请日：2008-02-06

申请人： Genichi Kakefuda ,  Colleen Costello ,  Ming Sun ,  Weiming Hu

发明人： Genichi Kakefuda ,  Colleen Costello ,  Ming Sun ,  Weiming Hu

IPC分类号： C12N15/11 ,  C12N15/82 ,  A01H5/00 ,  A01H5/10

CPC分类号： C12N15/8278 ,  C12N9/88

摘要： A promoter sequence and plant expression vectors encoding for an eukaryotic AHAS small subunit protein are disclosed. The DNA sequences and vectors are used to transform plants to produce transgenic plants which possess elevated levels of tolerance or resistance to herbicides, such as imidazolinones.

摘要翻译： 公开了编码真核AHAS小亚基蛋白的启动子序列和植物表达载体。 DNA序列和载体用于转化植物以产生对除草剂如咪唑啉酮具有较高耐受性或抗性的转基因植物。

公开(公告)号：US20080124838A1

公开(公告)日：2008-05-29

申请号：US11605831

申请日：2006-11-27

申请人： Kai Liu ,  Ming Sun

发明人： Kai Liu ,  Ming Sun

IPC分类号： H01L21/60

CPC分类号： H01L24/33 ,  H01L23/49582 ,  H01L24/83 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32506 ,  H01L2224/83801 ,  H01L2224/83894 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/01014 ,  H01L2924/00

摘要： A direct gold/silicon eutectic die bonding method is disclosed. The method includes the steps of gold plating a die bonding pad, grinding a wafer to a desired thickness, dicing the wafer after the grinding step, picking a die, and attaching the die to the die bonding pad at a temperature above the gold/silicon eutectic temperature. For thinner wafers, a dicing before grinding process is employed.

摘要翻译： 公开了一种直接的金/硅共晶裸片接合方法。 该方法包括以下步骤：将晶片接合焊盘镀金，将晶片研磨至所需厚度，在研磨步骤之后切割晶片，挑选模具，以及在高于金/硅的温度下将模具附接至芯片焊盘 共晶温度。 对于较薄的晶片，采用在研磨过程之前的切割。

公开(公告)号：US20060180931A1

公开(公告)日：2006-08-17

申请号：US11058913

申请日：2005-02-15

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Zhang

IPC分类号： H01L23/52

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US20060145312A1

公开(公告)日：2006-07-06

申请号：US11029653

申请日：2005-01-05

申请人： Kai Liu ,  Xiaotian Zhang ,  Ming Sun ,  Leeshawn Luo

发明人： Kai Liu ,  Xiaotian Zhang ,  Ming Sun ,  Leeshawn Luo

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/85 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A DFN semiconductor package includes a leadframe having a die bonding pad formed integrally with a drain lead, a gate lead and a source lead, a die coupled to the die bonding pad, a die source bonding area coupled to the source lead and a die gate bonding area coupled to the gate lead, and an encapsulant at least partially covering the die, drain lead, gate lead and source lead.

摘要翻译： DFN半导体封装包括引线框架，其具有与漏极引线，栅极引线和源极引线一体形成的管芯焊接焊盘，耦合到管芯焊接焊盘的管芯，耦合到源极引线的管芯源极接合区域和管芯栅极 键合区域，以及密封剂，其至少部分地覆盖晶片，漏极引线，栅极引线和源极引线。

公开(公告)号：US07041253B1

公开(公告)日：2006-05-09

申请号：US10201460

申请日：2002-07-23

申请人： Ming Sun

发明人： Ming Sun

IPC分类号： G01N33/00

CPC分类号： B01L3/508 ,  A61B10/007 ,  A61B10/0096 ,  B01L2300/042 ,  B01L2300/046 ,  B01L2300/0609 ,  B01L2300/0663 ,  B01L2300/0832 ,  G01N33/4875

摘要： A sample collection and test device that includes a container adapted to hold a fluid test sample, a lid secured to the container, a plate with a plurality of grooves and within each groove a test strip may be held, and a mechanism for securing the plate to the lid where the plate is able to pivot from a secured, inactive position within the lid to an active position within the container where the test strips contact the test sample is disclosed. Either the container or the lid may include a window in order to view the reactions on the test strips.

摘要翻译： 一种样本收集和测试装置，其包括适于容纳流体测试样本的容器，固定到容器的盖子，具有多个凹槽的板，并且在每个凹槽内可以保持测试条，以及用于固定板 公开了盖子，其中板能够从盖内的固定的非活动位置枢转到容器内的活动位置，其中测试条与测试样品接触。 容器或盖可以包括窗口以便观察测试条上的反应。

公开(公告)号：US06825399B2

公开(公告)日：2004-11-30

申请号：US09997900

申请日：2001-11-30

申请人： Genichi Kakefuda ,  Colleen Costello ,  Ming Sun ,  Weiming Hu

发明人： Genichi Kakefuda ,  Colleen Costello ,  Ming Sun ,  Weiming Hu

IPC分类号： A01H500

CPC分类号： C12N15/8278 ,  C12N9/88

摘要： Genomic and cDNA sequences and plant expression vectors for encoding an eukaryotic AHAS small subunit are disclosed. The DNA sequences and vectors are used to transform plants to produce transgenic plants which possess elevated levels of tolerance or resistance to herbicides, such as imidazolinones.

摘要翻译： 公开了用于编码真核AHAS小亚基的基因组和cDNA序列和植物表达载体。 DNA序列和载体用于转化植物以产生对除草剂如咪唑啉酮具有较高耐受性或抗性的转基因植物。

公开(公告)号：US06348643B1

公开(公告)日：2002-02-19

申请号：US09426568

申请日：1999-10-22

申请人： Genichi Kakefuda ,  Colleen Costello ,  Ming Sun ,  Weiming Hu

发明人： Genichi Kakefuda ,  Colleen Costello ,  Ming Sun ,  Weiming Hu

IPC分类号： C12N1560

CPC分类号： C12N15/8278 ,  C12N9/88

摘要： Genomic and cDNA sequences and plant expression vectors encoding for an arabidopsis AHAS small subunit protein are disclosed. The DNA sequences and vectors are used to transform plants to produce transgenic plants which possess elevated levels of tolerance or resistance to herbicides, such as imidazolinones.

摘要翻译： 公开了编码拟南芥AHAS小亚基蛋白的基因组和cDNA序列和植物表达载体。 DNA序列和载体用于转化植物以产生对除草剂如咪唑啉酮具有较高耐受性或抗性的转基因植物。