公开(公告)号：US06150808A

公开(公告)日：2000-11-21

申请号：US822925

申请日：1997-03-21

申请人： Hiroshi Yagyu ,  Koichi Sato ,  Makoto Ito ,  Kenichi Ao

发明人： Hiroshi Yagyu ,  Koichi Sato ,  Makoto Ito ,  Kenichi Ao

IPC分类号： H01H13/00 ,  H01H9/54 ,  H01H11/00 ,  H01H23/00 ,  H01H36/00 ,  H03K17/97 ,  G01B7/14 ,  G01B7/30 ,  H01H13/64 ,  H01L43/08

CPC分类号： H03K17/97 ,  E05F15/00 ,  E05Y2400/854 ,  E05Y2400/86 ,  E05Y2900/55 ,  H01H11/0056 ,  H01H2021/225 ,  H01H23/003 ,  H01H2300/01 ,  H03K2017/9713

摘要： A switching apparatus is provided which may be used for power window control systems of automotive vehicles. The switching apparatus includes an operating knob, a magnet, a magnetoresistive element, and a position determining circuit. The operating knob is manually shifted between a plurality of switching positions. The magnet moves according to the movement of the operating knob. The magnetoresistive element is placed in a magnetic field applied from the magnet and changes an electrical resistance thereof according to a variation in orientation of a magnetic flux applied to the magnetoresistive element resulting from the movement of the magnet. The position determining circuit monitors a change in electric resistance of the magnetoresistive element to determine the switching position of the operating member.

摘要翻译： 提供了可用于机动车辆的电动车窗控制系统的开关装置。 开关装置包括操作旋钮，磁体，磁阻元件和位置确定电路。 操作旋钮在多个切换位置之间手动移动。 磁铁根据操作旋钮的移动而移动。 磁阻元件被放置在从磁体施加的磁场中，并且根据由磁体的运动引起的施加到磁阻元件的磁通的取向的变化而改变其电阻。 位置确定电路监视磁阻元件的电阻变化，以确定操作构件的切换位置。

公开(公告)号：US6065341A

公开(公告)日：2000-05-23

申请号：US209414

申请日：1998-12-11

申请人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Minekazu Sakai ,  Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/125

CPC分类号： B81B3/0051 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  G01P2015/0814

摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.

摘要翻译： 可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。 通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。 止动部分通过锚定部电连接到梁部分。 因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

公开(公告)号：US5936159A

公开(公告)日：1999-08-10

申请号：US755097

申请日：1996-11-25

申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84

CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0814 ,  G01P2015/0828

摘要： A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.

摘要翻译： 一种半导体传感器，包括具有减小的偏转特性的可动构件梁结构。 传感器包括从半导体衬底悬挂的可移动的光束结构膜，其间插入在光束结构膜和衬底之间。 束结构膜由沿膜厚方向层叠的多个膜层构成。 此外，应力消除层插入在各个膜之间以减小结构上的整体内部应力。

公开(公告)号：US5869876A

公开(公告)日：1999-02-09

申请号：US788169

申请日：1997-01-24

申请人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

发明人： Seiichiro Ishio ,  Kenichi Ao ,  Hiroshige Sugito

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82 ,  H01L27/20

CPC分类号： G01P15/0802 ,  G01P15/124 ,  H01L29/84 ,  G01P2015/0814

摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.

摘要翻译： 半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。 蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽 ，每个都具有相对较多数量的缺陷。 因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。

公开(公告)号：US07250760B2

公开(公告)日：2007-07-31

申请号：US11529320

申请日：2006-09-29

申请人： Kenichi Ao

发明人： Kenichi Ao

IPC分类号： G01R33/02

CPC分类号： G01D5/145 ,  G01D11/245 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  Y10T29/49002 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The magnetic sensor is fabricated such that a magnetic sensor chip, having a one-chip structure in which MRE bridges and a comparator are included, is mounted onto a lead frame using an adhesive material, and then the magnetic sensor chip mounted on the lead frame is encapsulated by molding in a molded material. The magnetic sensor includes a magnetic-field generating portion formed by magnetizing at least one of the chip mounting member, the adhesive material, and the encapsulating material.

摘要翻译： 制造磁传感器，使得具有MRE桥和比较器的单片结构的磁传感器芯片使用粘合材料安装在引线框架上，然后安装在引线框架上的磁传感器芯片 通过在模制材料中模制而被包封。 磁传感器包括通过磁化芯片安装部件，粘合材料和封装材料中的至少一个而形成的磁场产生部。

公开(公告)号：US20070018642A1

公开(公告)日：2007-01-25

申请号：US11529320

申请日：2006-09-29

申请人： Kenichi Ao

发明人： Kenichi Ao

IPC分类号： G01R33/02

CPC分类号： G01D5/145 ,  G01D11/245 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  Y10T29/49002 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The magnetic sensor is fabricated such that a magnetic sensor chip, having a one-chip structure in which MRE bridges and a comparator are included, is mounted onto a lead frame using an adhesive material, and then the magnetic sensor chip mounted on the lead frame is encapsulated by molding in a molded material. The magnetic sensor includes a magnetic-field generating portion formed by magnetizing at least one of the chip mounting member, the adhesive material, and the encapsulating material.

公开(公告)号：US20050217372A1

公开(公告)日：2005-10-06

申请号：US11081604

申请日：2005-03-17

申请人： Kenichi Ao

发明人： Kenichi Ao

IPC分类号： G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/08 ,  G01P15/125 ,  G01P15/18

CPC分类号： G01C19/5719 ,  G01P15/125

摘要： A physical quantity sensor includes: a substrate; three angular speed sensors disposed on the substrate; and three acceleration sensors disposed on the substrate. The three angular speed sensors are capable of detecting three components of an angular speed around three axes, each two of which intersect perpendicularly. The three acceleration sensors are capable of detecting three components of an acceleration in another three axes, each two of which intersect perpendicularly. The three axes of the angular speed sensors intersect at one point, and the other three axes of the acceleration sensors intersect at another one point.

摘要翻译： 物理量传感器包括：基板; 设置在基板上的三个角速度传感器; 和设置在基板上的三个加速度传感器。 三个角速度传感器能够检测围绕三个轴的角速度的三个分量，每个轴两个垂直相交。 三个加速度传感器能够检测另外三个轴的三个加速度分量，每个轴两个垂直相交。 角速度传感器的三个轴在一点相交，加速度传感器的另外三个轴在另一个点相交。

公开(公告)号：US6130010A

公开(公告)日：2000-10-10

申请号：US772993

申请日：1996-12-23

申请人： Seiichiro Ishio ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Kenichi Ao

IPC分类号： G01L1/18 ,  B81C1/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/033 ,  H01L21/306 ,  H01L29/84 ,  G03F9/00

CPC分类号： B81C1/0042 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/0334 ,  G01P2015/084

摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.

摘要翻译： 在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。 每个形状补偿部分具有长边和短边的矩形形状。 此外，蚀刻掩模的长边和短边之一在硅衬底的[011]方向上延伸，另一侧在硅衬底的[0 + E，ov1 + EE1]方向上延伸。 结果，可以在对应于掩模的主要部分的未蚀刻部分上形成大的角落底切部分，将硅衬底蚀刻成预定形状。

公开(公告)号：US5922212A

公开(公告)日：1999-07-13

申请号：US663001

申请日：1996-06-07

申请人： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

发明人： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  C23F1/00

CPC分类号： G01P15/125 ,  B81B3/0072 ,  B81C1/00666 ,  G01P15/0802 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/017 ,  G01P2015/0814

摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.

摘要翻译： 公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。 在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。 此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。 通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。 通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

公开(公告)号：US5864064A

公开(公告)日：1999-01-26

申请号：US717405

申请日：1996-09-20

申请人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

发明人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

IPC分类号： G01P15/00 ,  G01H1/00 ,  G01P15/02 ,  G01P15/08 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/135 ,  G01P15/18

摘要： An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

摘要翻译： 一个加速度传感器是由一个基板，一个被加速移位的一个圆柱形的自重的可移动电极构成的，一个固定的电极从一个圆柱体中空的一个固定的电极，一个设置在基板上的圆柱形的锚固件，用于支撑自重的可动电极 具有弹性可变形结构材料和梁。 当从外部施加加速度时，固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触，并且加速度传感器检测接触。 考虑到光束的弹性模量，设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔，从而可以各向异性地检测外力，并且加速度传感器检测到二次加速度 非定向平面。