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公开(公告)号：US07719588B2
公开(公告)日：2010-05-18
申请号：US11836265
申请日：2007-08-09
申请人： Kazutoshi Onozawa , Kenichi Matsuda
发明人： Kazutoshi Onozawa , Kenichi Matsuda
CPC分类号： H01L27/14627 , G02B5/1885 , H01L27/14618 , H01L27/14621 , H01L27/14683 , H01L27/14685 , H01L41/0533 , H01L2924/0002 , H04N5/2254 , H04N5/2257 , H04N5/33 , H01L2924/00
摘要： Provided is a solid-state imaging device which is able to achieve reductions in size and in thickness of the device, while being also able to have an auxiliary function of imaging lenses, an infrared cut filter, an antireflection function, a dust preventing function for downsizing of packaging, and an infrared light imaging function for capturing images at night. The solid-state imaging device includes: a light-collecting element which collects incident light; and a transparent thin film formed above the light-collecting element, and an air gap is formed between the light-collecting element and the transparent thin film. On the transparent thin film, the auxiliary function of imaging lenses, the infrared cut filter, the antireflection function, the dust preventing function for downsizing of packaging, and the infrared light imaging function for capturing images at night are integrated.
摘要翻译： 提供一种能够实现装置的尺寸和厚度的减小的固态成像装置，同时还能够具有成像透镜，红外截止滤光器，抗反射功能，防尘功能， 包装尺寸缩小，夜间拍摄图像的红外光成像功能。 固体摄像装置包括：收集入射光的光收集元件; 以及形成在集光元件上方的透明薄膜，并且在聚光元件和透明薄膜之间形成气隙。 在透明薄膜上，集成了成像透镜的辅助功能，红外截止滤光片，防反射功能，用于小型化封装的防尘功能以及用于在夜间拍摄图像的红外光成像功能。
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公开(公告)号：US20110080929A1
公开(公告)日：2011-04-07
申请号：US12519465
申请日：2009-01-08
申请人： Kazutoshi Onozawa , Satoshi Tamura
发明人： Kazutoshi Onozawa , Satoshi Tamura
CPC分类号： H01S5/22 , B82Y20/00 , G11B7/127 , H01S5/0202 , H01S5/1082 , H01S5/2009 , H01S5/2201 , H01S5/3216 , H01S5/34333 , H01S2301/02
摘要： A semiconductor laser device includes a substrate 11 having a (1-100) oriented principal surface, a semiconductor multilayer structure 12 formed on the substrate 11 and having a stripe-shaped optical waveguide, and a plurality of pyramidal protrusions 13 formed at least on a part of a light emitting facet of the substrate 11. The light emitting facet has a (000-1) plane orientation.
摘要翻译： 半导体激光器件包括具有（1-100）取向主表面的基板11，形成在基板11上并具有条形光波导的半导体多层结构12，以及至少形成在其上的多个锥体状突起13 基板11的发光小面的一部分。发光小面具有（000-1）面取向。
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33.发明授权公开(公告)号：US07663084B2
公开(公告)日：2010-02-16
申请号：US12189971
申请日：2008-08-12
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.
摘要翻译： 固态成像装置包括具有以二维阵列排列的相关联的微透镜的多个单位像素。 每个微透镜包括具有调制的有效折射率分布的分布式折射率透镜，通过包括具有同心结构的多个图案的组合而获得，所述多个图案被划分成等于或短于入射光的波长的线宽。 多个图案中的至少一个图案包括具有同心结构且第一线宽度和第一膜厚度的下部透光膜，以及具有同心结构的上部透光膜，其在下部透光膜上具有 第二线宽度和第二膜厚度。 分布式折射率透镜具有其中折射率材料在中心处致密并且在同心结构中朝向外侧逐渐变稀的结构。
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公开(公告)号：US07391798B2
公开(公告)日：2008-06-24
申请号：US11410048
申请日：2006-04-25
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译： 半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。 上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。
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公开(公告)号：US07846620B2
公开(公告)日：2010-12-07
申请号：US11860756
申请日：2007-09-25
IPC分类号： G03F1/00
CPC分类号： G03F7/0005 , G03F1/30
摘要： The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
摘要翻译： 根据本发明的相移掩模是用于制造半导体器件的相移掩模。 相移掩模包括遮光部分，透光部分，相移部分和辅助图案部分，遮光部分，透光部分，相移部分和辅助图案部分 其中所述辅助图形部分在半径方向上的宽度小于所述透光部分的宽度和所述相移部分在半径方向上的宽度。 此外，通过辅助图案部分的曝光光的相位可能与通过透光部分或相移部分的曝光光的相位相反，透光部分或相移部分 最靠近辅助图案部分。
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公开(公告)号：US07701024B2
公开(公告)日：2010-04-20
申请号：US11954948
申请日：2007-12-12
IPC分类号： H01L31/0232 , H01L31/0203
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14687 , H01L31/02165
摘要： A solid-state imaging device which includes a color filter having excellent color reproduction, a manufacturing method thereof and a camera are provided.A color filter in a solid-state imaging device 1 having an optical film thickness of approximately ¼ of a set wavelength λ, being sandwiched by a third layer and a fourth layer which are spacer layers in which only 3 layers are laminated and which consist of two types of layers (first layers and a second layer) with different refractive indexes, and further, having a structure that is sandwiched by a film, a first layer, which has a film thickness approximately equal to the above λ/4. Between the two types of layers having different refractive indexes, the first layers are composed of high refractive index material, and the second layer is composed of low refractive index material. The third layer and the fourth layer have an optical film thickness according to the light which passes through, and the material film thickness of the entire color filter also differs for each color of light.
摘要翻译： 提供一种固态成像装置，其包括具有优异色彩再现的滤色器，其制造方法和照相机。 固体摄像器件1中的滤色器，其光学膜厚度约为设定波长λ的1/4，夹在第三层和第四层之间，隔着层仅层压3层，并由 具有不同折射率的两种类型的层（第一层和第二层），并且还具有被膜夹持的结构，第一层具有大约等于上述λ/ 4的膜厚度。 在具有不同折射率的两种类型的层之间，第一层由高折射率材料构成，第二层由低折射率材料构成。 第三层和第四层根据通过的光具有光学膜厚度，并且对于每种颜色的光，整个滤色器的材料膜厚度也不同。
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37.发明申请公开(公告)号：US20050164485A1
公开(公告)日：2005-07-28
申请号：US11033304
申请日：2005-01-12
申请人： Kazutoshi Onozawa
发明人： Kazutoshi Onozawa
CPC分类号： H01L24/95 , H01L25/50 , H01L2224/95085 , H01L2224/95136 , H01L2924/01006 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/10158 , H01L2924/12042 , H01L2924/15155 , H01L2924/15165 , H01L2924/15153 , H01L2924/00
摘要： In a semiconductor-device fabrication method, a plurality of recessed portions are first formed in the principal surface of a substrate. Then, a through hole, passing through the substrate in the front-to-back direction of the substrate, is formed under a portion of the bottom of each recessed portion in the substrate. Subsequently, a plurality of semiconductor elements in the form of chips are spread in a liquid, and the semiconductor-element-spread liquid is poured over the principal surface of the substrate, while passing the liquid through the through holes, so that the semiconductor elements fit into the recessed portions in a self-aligned manner. In this way, the semiconductor elements are disposed into the recessed portions in the substrate in a self-aligned manner.
摘要翻译： 在半导体器件制造方法中，首先在基板的主表面上形成多个凹部。 然后，在基板的每个凹部的底部的一部分的下方形成有在基板的前后方向上穿过基板的通孔。 随后，将多个芯片形式的半导体元件分散在液体中，并且半导体元件铺展的液体在使液体通过通孔的同时在基板的主表面上注入，使得半导体元件 以自对准的方式嵌入凹部。 以这种方式，半导体元件以自对准的方式设置在基板的凹部中。
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公开(公告)号：US06790692B2
公开(公告)日：2004-09-14
申请号：US10602000
申请日：2003-06-24
申请人： Kazutoshi Onozawa
发明人： Kazutoshi Onozawa
IPC分类号： H01L2100
CPC分类号： H01L24/95 , H01L21/6835 , H01L25/0753 , H01L25/50 , H01L2224/95085 , H01L2224/95092 , H01L2224/95136 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/01078 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Formed first is a template having openings located to correspond to a pattern in which a plurality of semiconductor laser elements are to be arranged. Then, the template is held on the principal surface of a mounting wafer onto which the semiconductor elements are to be arranged. Subsequently, the semiconductor laser elements are dispersed into a fluid, and the semiconductor-laser-element-dispersed fluid is poured over the wafer on which the template is held. In this manner, the semiconductor laser elements are disposed into the respective openings of the template in a self-aligned manner.
摘要翻译： 首先形成具有开口的模板，其对应于要布置多个半导体激光元件的图案。 然后，将模板保持在要安置半导体元件的安装晶片的主表面上。 随后，将半导体激光元件分散在流体中，并且将半导体激光元件分散流体倒在保持模板的晶片上。 以这种方式，半导体激光元件以自对准的方式设置在模板的相应开口中。
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公开(公告)号：US20110268144A1
公开(公告)日：2011-11-03
申请号：US12681981
申请日：2009-10-21
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0658 , H01S5/2009 , H01S5/2081 , H01S5/2206 , H01S5/3063
摘要： A nitride semiconductor laser device includes an active layer 106 made of a nitride semiconductor formed on a substrate and a current confining layer 109 formed above the active layer 106. The current confining layer has an opening 109a through which a current selectively flows into the active layer 106. The device satisfies 0.044
摘要翻译： 氮化物半导体激光器件包括由形成在衬底上的氮化物半导体制成的有源层106和形成在有源层106上方的电流限制层109.电流限制层具有开口109a，电流选择性地流入有源层 该装置满足0.044 <＆Dgr; n /＆Ggr; v <0.062其中＆Dgr; n是开口109a和电流限制层109之间的有效折射率差，＆Ggr; v是作为垂直光限制因子的比例 限定在有源层106中的激光照射到在有源层106中发射的激光。
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40.发明授权公开(公告)号：US08004595B2
公开(公告)日：2011-08-23
申请号：US12275492
申请日：2008-11-21
申请人： Kazutoshi Onozawa
发明人： Kazutoshi Onozawa
CPC分类号： H01L27/14627 , H01L27/14605
摘要： To provide a solid-state imaging device that can capture an image which is bright through to its periphery, even when used in a single-lens reflex digital camera that accepts various interchangeable lenses from wide-angle to telephoto. The solid-state imaging device includes a two-dimensional array of unit pixels each of which includes a light-collecting element. A light-collecting element in a unit pixel is a combination of circular-sector-shaped light-collecting elements having different concentric structures. A central axis of the concentric structures is perpendicular to a light-receiving plane of the light-collecting element. Each of the circular-sector-shaped light-collecting elements is divided into concentric zone areas of a width equal to or smaller than a wavelength of incident light. Thus, an image which is bright through to its periphery can be captured even when light incident on a unit pixel changes from wide-angle to telecentric (chief rays are approximately parallel to an optical axis).
摘要翻译： 为了提供一种可以拍摄到其周围明亮的图像的固态成像装置，即使用于从广角到长焦接受各种可互换镜头的单镜头反光数码相机中。 固态成像装置包括单位像素的二维阵列，每个阵列包括光收集元件。 单位像素中的光收集元件是具有不同同心结构的圆形扇形聚光元件的组合。 同心结构的中心轴垂直于光收集元件的光接收平面。 每个圆形扇形集光元件被分成宽度等于或小于入射光波长的同心区域。 因此，即使入射到单位像素上的光从广角向远心变化（主光线近似平行于光轴），也可以捕获到其周围明亮的图像。
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